ON Semiconductor NCP1030, NCP1031 Technical data

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NCP1030

NCP1030, NCP1031

Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for 48 V Telecom Systems

The NCP1030 and NCP1031 are a family of miniature high−voltage monolithic switching regulators with on−chip Power Switch and Startup Circuits. The NCP103x family incorporates in a single IC all the active power, control logic and protection circuitry required to implement, with minimal external components, several switching regulator applications, such as a secondary side bias supply or a low power dc−dc converter. This controller family is ideally suited for 48 V telecom, 42 V automotive and 12 V input applications. The NCP103x can be configured in any single−ended topology such as forward or flyback. The NCP1030 is targeted for applications requiring up to 3 W, and the NCP1031 is targeted for applications requiring up to 6 W.

The internal error amplifier allows the NCP103x family to be easily configured for secondary or primary side regulation operation in isolated and non−isolated configurations. The fixed frequency oscillator is optimized for operation up to 1 MHz and is capable of external frequency synchronization, providing additional design flexibility. In addition, the NCP103x incorporates individual line undervoltage and overvoltage detectors, cycle by cycle current limit and thermal shutdown to protect the controller under fault conditions. The preset current limit thresholds eliminate the need for external sensing components.

Features

On Chip High 200 V Power Switch Circuit and Startup Circuit

Internal Startup Regulator with Auxiliary Winding Override

Operation up to 1 MHz

External Frequency Synchronization Capability

Frequency Fold−down Under Fault Conditions

Trimmed ± 2% Internal Reference

Line Undervoltage and Overvoltage Detectors

Cycle by Cycle Current Limit Using SENSEFET

Active LEB Circuit

Overtemperature Protection

Internal Error Amplifier

Typical Applications

Secondary Side Bias Supply for Isolated dc−dc Converters

Stand Alone Low Power dc−dc Converter

Low Power Bias Supply

Low Power Boost Converter

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MARKING

 

 

DIAGRAMS

 

 

8

8

Micro8

1030

 

DM SUFFIX

AYW

1

CASE 846A

 

 

 

 

 

1

 

SO−8

8

 

N1031

8

D SUFFIX

CASE 751

ALYW

1

 

 

1

 

 

1030/N1031 = Specific Device Code

A

= Assembly Location

L

= Wafer Lot

 

Y

= Year

 

W

= Work Week

PIN CONNECTIONS

1

 

8

GND

 

VDRAIN

2

 

7

CT

 

VCC

3

 

6

VFB

 

UV

4

 

5

COMP

 

OV

 

(Top View)

 

ORDERING INFORMATION

Device

Package

Shipping²

NCP1030DMR2

Micro8

4000/Tape & Reel

NCP1031DR2

SO−8

2500/Tape & Reel

²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

1

Publication Order Number:

August, 2004 − Rev. 4

 

NCP1030/D

NCP1030, NCP1031

GND

Internal Bias

I1

CT

10 V

I2 = 3I1

Error Amplifier

VFB

+

10 V +

2.5 V

COMP

2 k

10 V

 

RSENSE

 

Current Limit

LEB

 

Comparator

 

 

 

 

CT Ramp

+

+

 

 

 

50 mV

+

3.0 V/3.5 V

I

One Shot

O

S

Reset Q

Pulse

 

 

 

 

Dominant

 

 

R

Latch

+

 

 

PWM Latch

 

 

 

PWM Comparator

 

 

 

 

 

4.5 V

 

 

Disable

 

+

 

 

ISTART

7.5 V/10 V

 

 

 

 

 

 

Thermal

+

 

16 V

Shutdown

 

 

 

 

 

Reset S

 

+

 

Q Dominant

10 V

 

Latch

 

 

R

 

 

+

+

 

 

 

 

 

6.5 V

 

 

 

+

 

 

 

+

 

10 V

 

2.5 V

 

 

 

 

 

+

 

 

 

 

 

10 V

 

VDRAIN

VCC

UV

OV

Figure 1. NCP1030/31 Functional Block Diagram

FUNCTIONAL PIN DESCRIPTION

Pin

Name

Function

Description

 

 

 

 

1

GND

Ground

Ground reference pin for the circuit.

 

 

 

 

2

CT

Oscillator Frequency

An external capacitor connected to this pin sets the oscillator frequency up to 1 MHz.

 

 

Selection

The oscillator can be synchronized to a higher frequency by charging or discharging

 

 

 

CT to trip the internal 3.0 V/3.5 V comparator. If a fault condition exists, the power

 

 

 

switch is disabled and the frequency is reduced by a factor of 7.

 

 

 

 

3

VFB

Feedback Input

The regulated voltage is scaled down to 2.5 V by means of a resistor divider.

 

 

 

Regulation is achieved by comparing the scaled voltage to an internal 2.5 V reference.

 

 

 

 

4

COMP

Error Amplifier Compensation

Requires external compensation network between COMP and VFB pins. This pin is

 

 

 

effectively grounded if faults are present.

 

 

 

 

5

OV

Line Overvoltage Shutdown

Line voltage (Vin) is scaled down using an external resistor divider such that the OV

 

 

 

voltage reaches 2.5 V when line voltage reaches its maximum operating voltage.

 

 

 

 

6

UV

Line Undervoltage Shutdown

Line voltage is scaled down using an external resistor divider such that the UV

 

 

 

voltage reaches 2.5 V when line voltage reaches its minimum operating voltage.

 

 

 

 

7

VCC

Supply Voltage

This pin is connected to an external capacitor for energy storage. During Turn−On, the

 

 

 

startup circuit sources current to charge the capacitor connected to this pin. When the

 

 

 

supply voltage reaches VCC(on), the startup circuit turns OFF and the power switch is

 

 

 

enabled if no faults are present. An external winding is used to supply power after

 

 

 

initial startup to reduce power dissipation. VCC should not exceed 16 V.

8

VDRAIN

Power Switch and

This pin directly connects the Power Switch and Startup Circuits to one of the

 

 

Startup Circuits

transformer windings. The internal High Voltage Power Switch Circuit is connected

 

 

 

between this pin and ground. VDRAIN should not exceed 200 V.

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2

ON Semiconductor NCP1030, NCP1031 Technical data

NCP1030, NCP1031

 

CT Ramp

COMP Voltage

 

CT Charge

 

Signal

 

PWM

 

Comparator

 

Output

Current Limit

 

Propagation Delay

PWM Latch

 

Output

 

Power Switch

 

Circuit Gate Drive

 

Leading Edge

Current Limit

Threshold

Blanking Output

 

Normal PWM Operating Range

Output Overload

Figure 2. Pulse Width Modulation Timing Diagram

VCC(on)

VCC(off)

VCC(reset)

0 V

ISTART

0 mA

3.0 V

VUV

0 V

2.5 V

VFB

0 V

VDRAIN

0 V

Power−up &

Normal Operation

Output Overload

standby Operation

 

 

Figure 3. Auxiliary Winding Operation with Output Overload Timing Diagram

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3

NCP1030, NCP1031

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Power Switch and Startup Circuits Voltage

VDRAIN

−0.3 to 200

V

Power Switch and Startup Circuits Input Current

IDRAIN

1.0

A

− NCP1030

 

 

− NCP1031

 

2.0

 

 

 

 

 

VCC Voltage Range

VCC

−0.3 to 16

V

All Other Inputs/Outputs Voltage Range

VIO

−0.3 to 10

V

VCC and All Other Inputs/Outputs Current

IIO

100

mA

Operating Junction Temperature

TJ

−40 to 125

°C

Storage Temperature

Tstg

−55 to 150

°C

Power Dissipation (TJ = 25°C, 2.0 Oz., 1.0 Sq Inch Printed Circuit Copper Clad)

 

0.69

W

DM Suffix, Plastic Package Case 846A

 

 

D Suffix, Plastic Package Case 751

 

0.93

 

 

 

 

 

Thermal Resistance, Junction to Air (2.0 Oz. Printed Circuit Copper Clad)

R JA

 

°C/W

DM Suffix, Plastic Package Case 846A

 

181

 

0.36 Sq. Inch

 

 

1.0 Sq. Inch

 

162

 

D Suffix, Plastic Package Case 751

 

135

 

0.36 Sq. Inch

 

 

1.0 Sq. Inch

 

117

 

 

 

 

 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

A.This device contains ESD protection circuitry and exceeds the following tests: Pins 1−7: Human Body Model 2000V per MIL−STD−883, Method 3015.

Machine Model Method 200 V.

Pin 8 is connected to the High Voltage Startup and Power Switch Circuits and rated only to the maximum voltage rating of the part, or 200 V.

B.This device contains Latchup protection and exceeds 100 mA per JEDEC Standard JESD78.

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4

NCP1030, NCP1031

DC ELECTRICAL CHARACTERISTICS (VDRAIN = 48 V, VCC = 12 V, CT = 560 pF, VUV = 3 V, VOV = 2 V, VFB = 2.3 V, VCOMP = 2.5 V, TJ = −40 °C to 125°C, typical values shown are for TJ = 25°C unless otherwise noted.) (Note 1)

Characteristics

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

STARTUP CONTROL

 

 

 

 

 

 

 

 

 

 

 

Startup Circuit Output Current (VFB = VCOMP)

ISTART

 

 

 

mA

NCP1030

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

VCC = 0 V

 

10

12.5

15

 

VCC = VCC(on) − 0.2 V

 

6.0

8.6

12

 

TJ = −40 °C to 125°C

 

8.0

16

 

VCC = 0 V

 

 

 

2.0

13

 

VCC = VCC(on) − 0.2 V

 

 

 

 

 

 

 

NCP1031

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

VCC = 0 V

 

13

16

19

 

VCC = VCC(on) − 0.2 V

 

8.0

12

16

 

TJ = −40 °C to 125°C

 

 

 

 

 

VCC = 0 V

 

11

21

 

VCC = VCC(on) − 0.2 V

 

4.0

18

 

VCC Supply Monitor (VFB = 2.7 V)

 

 

 

 

V

Startup Threshold Voltage (VCC Increasing)

VCC(on)

9.6

10.2

10.6

 

Minimum Operating VCC After Turn−on (V CC Increasing)

VCC(off)

7.0

7.6

8.0

 

Hysteresis Voltage

VCC(hys)

2.6

 

Undervoltage Lockout Threshold Voltage, VCC Decreasing (VFB = VCOMP)

VCC(reset)

6.0

6.6

7.0

V

Minimum Startup Voltage (Pin 8)

VSTART(min)

 

 

 

V

ISTART = 0.5 mA, VCC =VCC(on) − 0.2 V

 

16.8

18.5

 

ERROR AMPLIFIER

 

 

 

 

 

 

 

 

 

 

 

Reference Voltage (VCOMP = VFB, Follower Mode)

VREF

 

 

 

V

TJ = 25°C

 

2.45

2.5

2.55

 

TJ = −40 °C to 125°C

 

2.40

2.5

2.60

 

Line Regulation (VCC = 8 V to 16 V, TJ = 25°C)

REGLINE

1.0

5.0

mV

Input Bias Current (VFB = 2.3 V)

IVFB

0.1

1.0

A

COMP Source Current

ISRC

80

110

140

A

COMP Sink Current (VFB = 2.7 V)

ISNK

200

550

900

A

COMP Maximum Voltage (ISRC = 0 A)

VC(max)

4.5

V

COMP Minimum Voltage (ISNK = 0 A, VFB = 2.7 V)

VC(min)

1.0

V

Open Loop Voltage Gain

AVOL

80

dB

Gain Bandwidth Product

GBW

1.0

MHz

 

 

 

 

 

 

LINE UNDER/OVERVOLTAGE DETECTOR

 

 

 

 

 

 

 

 

 

 

 

Undervoltage Lockout (VFB = VCOMP)

 

 

 

 

 

Voltage Threshold (Vin Increasing)

VUV

2.400

2.550

2.700

V

Voltage Hysteresis

VUV(hys)

0.075

0.175

0.275

V

Input Bias Current

IUV

0

1.0

A

Overvoltage Lockout (VFB = VCOMP)

 

 

 

 

 

Voltage Threshold (Vin Increasing)

VOV

2.400

2.550

2.700

V

Voltage Hysteresis

VOV(hys)

0.075

0.175

0.275

V

Input Bias Current

IOV

0

1.0

A

1. Production testing for NCP1030DMR2 is performed at 25°C only; limits at −40 °C and 125°C are guaranteed by design.

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5

NCP1030, NCP1031

DC ELECTRICAL CHARACTERISTICS (VDRAIN = 48 V, VCC = 12 V, CT = 560 pF, VUV = 3 V, VOV = 2 V, VFB = 2.3 V, VCOMP = 2.5 V, TJ = −40 °C to 125°C, typical values shown are for TJ = 25°C unless otherwise noted.) (Note 2)

Characteristics

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OSCILLATOR

 

 

 

 

 

 

 

 

 

 

 

Frequency (CT = 560 pF, Note 3)

fOSC1

 

 

 

kHz

TJ = 25°C

 

275

300

325

 

TJ = −40 °C to 125°C

 

260

325

 

Frequency (CT = 100 pF)

fOSC2

800

kHz

Charge Current (VCT = 3.25 V)

ICT(C)

215

A

Discharge Current (VCT = 3.25 V)

ICT(D)

645

A

Oscillator Ramp

 

 

 

 

V

Peak

Vrpk

3.5

 

Valley

Vrvly

3.0

 

PWM COMPARATOR

 

 

 

 

 

 

 

 

 

 

 

Maximum Duty Cycle

DCMAX

70

75

80

%

POWER SWITCH CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

Power Switch Circuit On−State Resistance (I D = 100 mA)

RDS(on)

 

 

 

 

NCP1030

 

 

 

 

 

TJ = 25°C

 

4.1

7.0

 

TJ = 125°C

 

6.0

12

 

NCP1031

 

 

 

 

 

TJ = 25°C

 

2.1

3.0

 

TJ = 125°C

 

3.5

6.0

 

Power Switch Circuit and Startup Circuit Breakdown Voltage

V(BR)DS

 

 

 

V

(ID = 100 A, TJ = 25°C)

 

200

 

Power Switch Circuit and Startup Circuit Off−State Leakage Current

IDS(off)

 

 

 

A

(VDRAIN = 200 V, VUV = 2.0 V)

 

 

 

 

 

TJ = 25°C

 

13

25

 

TJ = −40 to 125 °C

 

50

 

Switching Characteristics (VDS = 48 V, RL = 100 )

 

 

 

 

ns

Rise Time

tr

22

 

Fall Time

tf

24

 

CURRENT LIMIT AND OVER TEMPERATURE PROTECTION

 

 

 

 

 

 

 

 

 

 

 

Current Limit Threshold (TJ = 25°C)

ILIM

350

515

680

mA

NCP1030 (di/dt = 0.5 A/ s)

 

 

NCP1031 (di/dt = 1.0 A/ s)

 

700

1050

1360

 

 

 

 

 

 

 

Propagation Delay, Current Limit Threshold to Power Switch Circuit Output

tPLH

100

ns

(Leading Edge Blanking plus Current Limit Delay)

 

 

 

 

 

 

 

 

Thermal Protection (Note 4)

 

 

 

 

°C

Shutdown Threshold (TJ Increasing)

TSHDN

125

150

 

Hysteresis

THYS

45

 

TOTAL DEVICE

 

 

 

 

 

 

 

 

 

 

 

Supply Current After UV Turn−On

 

 

 

 

mA

Power Switch Enabled

ICC1

2.0

3.0

4.0

 

Power Switch Disabled

 

 

 

 

 

Non−Fault condition (V FB = 2.7 V)

ICC2

1.5

2.0

 

Fault Condition (VFB = 2.7 V, VUV = 2.0 V)

ICC3

0.65

1.2

 

2.Production testing for NCP1030DMR2 is performed at 25°C only; limits at −40 °C and 125°C are guaranteed by design.

3.Oscillator frequency can be externally synchronized to the maximum frequency of the device.

4.Guaranteed by design only.

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