ON Semiconductor MR850, MR851, MR852, MR854, MR856 Technical data

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ON Semiconductor MR850, MR851, MR852, MR854, MR856 Technical data

MR850, MR851, MR852, MR854, MR856

MR852 and MR856 are Preferred Devices

Axial Lead Fast

Recovery Rectifiers

Axial lead mounted fast recovery power rectifiers are designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference and free wheeling diodes. A complete line of fast recovery rectifiers having typical recovery time of 100 nanoseconds providing high efficiency at frequencies to 250 kHz.

Features

These are Pb−Free Devices*

Mechanical Characteristics:

Case: Epoxy, Molded

Weight: 1.1 Gram (Approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

Available Tape and Reel, 1200 per Reel, by adding a “RL” Suffix to the Part Number

Polarity: Cathode Indicated by Polarity Band

http://onsemi.com

FAST RECOVERY

POWER RECTIFIERS

3.0 AMPERES, 50−600 VOLTS

AXIAL LEAD

CASE 267

STYLE 1

MARKING DIAGRAM

 

 

 

A

 

 

 

 

MR85x

 

 

 

 

YYWW G

 

 

 

 

G

 

 

 

 

 

 

A

= Assembly Location

MR85x

= Device Number

 

x = 0, 1, 2, 4 or 6

YY

= Year

WW

= Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

July, 2006 − Rev. 5

 

MR850/D

MR850, MR851, MR852, MR854, MR856

MAXIMUM RATINGS

Rating

Symbol

MR850

MR851

 

MR852

 

MR854

MR856

Unit

 

 

 

 

 

 

 

 

 

 

Peak Repetitive Reverse Voltage

VRRM

50

100

 

200

 

400

600

V

Working Peak Reverse Voltage

VRWM

 

 

 

 

 

 

 

 

DC Blocking Voltage

VR

 

 

 

 

 

 

 

 

Non−Repetitive Peak Reverse Voltage

VRSM

75

150

 

250

 

450

650

V

RMS Reverse Voltage

VR(RMS)

35

70

 

140

 

280

420

V

Average Rectified Forward Current

IO

 

 

3.0

 

 

 

A

(Single phase resistive load, TA = 80°C)

 

 

 

 

 

 

 

 

 

Non−Repetitive Peak Surge Current

IFSM

 

 

100

 

 

 

A

(Surge Applied at Rated Load Conditions)

 

 

 

(one cycle)

 

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

 

 

− 65 to +125

 

 

°C

 

 

 

 

− 65 to +150

 

 

 

 

 

 

 

 

 

 

 

 

 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Ambient

RqJA

28

°C/W

(Recommended Printed Circuit Board Mounting)

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

Forward Voltage

 

VF

1.04

1.25

V

(IF = 3.0 A, TJ = 25°C)

 

 

 

 

 

 

Reverse Current (rated DC voltage) TJ = 25°C

IR

2.0

10

mA

 

MR850

 

150

 

 

MR851

 

60

150

 

TJ = 80°C

MR852

 

200

 

 

MR854

 

250

 

 

MR856

 

100

300

 

 

 

 

 

 

 

 

REVERSE RECOVERY CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

Reverse Recovery Time

trr

 

 

 

ns

(IF = 1.0 A to VR = 30 Vdc)

 

100

200

 

(IF = 15 A, di/dt = 10 A/ms)

 

150

300

 

Reverse Recovery Current

IRM(REC)

2.0

A

(IF = 1.0 A to VR = 30 Vdc)

 

 

 

 

 

http://onsemi.com

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