ON Semiconductor MJW21191, MJW21191G, MJW21192, MJW21192G Service Manual

MJW21192 (NPN),

MJW21191 (PNP)

Complementary Silicon

Plastic Power Transistors

Specifically designed for power audio output, or high power drivers in audio amplifiers.

•DC Current Gain Specified up to 8.0 A at Temperature

•All On Characteristics at Temperature

•High SOA: 20 A, 18 V, 100 ms

•TO−247AE Package

•Pb−Free Packages are Available*

MAXIMUM RATINGS

			MJW21191
Rating		Symbol	MJW21192	Unit
Collector−Emitter Voltage		VCEO	150	Vdc
Collector−Base Voltage		VCB	150	Vdc
Emitter−Base Voltage		VEB	5.0	Vdc
Collector Current −	Continuous	IC	8.0	Adc
−	Peak		16
Base Current		IB	2.0	Adc
Total Power Dissipation @ TC = 25_C		PD	125	W
Derate above 25_C			0.65	W/_C
Operating and Storage Junction		TJ, Tstg	– 65 to	_C
Temperature Range			+150

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RqJC	1.0	_C/W
Thermal Resistance, Junction to Ambient	RqJA	50	_C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1000
(pF)																PNP
	100			NPN
CAPACITANCE
	10
C,
	1.0
	1.0			10												100										1000
									VR, REVERSE VOLTAGE (V)

Figure 1. Typical Capacitance @ 25°C

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

♥ Semiconductor Components Industries, LLC, 2005	1
June, 2005 − Rev. 2

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8.0 A

POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W

TO−247

CASE 340L

STYLE 3

1 2 3

MARKING DIAGRAM

MJW2119x

AYWWG

1 BASE 3 EMITTER

2COLLECTOR

x= 1 or 2

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

ORDERING INFORMATION

Device	Package	Shipping
MJW21191	TO−247	30 Units/Rail
MJW21191G	TO−247	30 Units/Rail
	(Pb−Free)
MJW21192	TO−247	30 Units/Rail
MJW21192G	TO−247	30 Units/Rail
	(Pb−Free)

Publication Order Number:

MJW21192/D

MJW21192 (NPN), MJW21191 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)	VCEO(sus)			Vdc
(IC = 10 mAdc, IB = 0)		150	−
Collector Cutoff Current	ICES			mAdc
(VCB = 250 Vdc, IE = 0)		−	10
Emitter Cutoff Current	IEBO			mAdc
(VBE = 5.0 Vdc, IC = 0)		−	10
ON CHARACTERISTICS (Note 1)
DC Current Gain	hFE			−
(IC = 4.0 Adc, VCE = 2.0 Vdc)		15	100
(IC = 8.0 Adc, VCE = 2.0 Vdc)		5.0	−
Collector−Emitter Saturation Voltage	VCE(sat)			Vdc
(IC = 4.0 Adc, IB = 0.4 Adc)		−	1.0
(IC = 8.0 Adc, IB = 1.6 Adc)		−	2.0
Base−Emitter On Voltage	VBE(on)	−	2.0	Vdc
(IC = 4.0 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)	fT	4.0	−	MHz
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2.	fT = hfe• ftest.
		1.0
			D = 0.5								DUTY
											CYCLE,
	RESISTANCE (NORMALIZED)									P(pk)	D = t1/t2
TRANSIENT THERMAL			0.2
			0.1							t1
		0.1								t2
			0.05						ZθJC(t) = r(t) RθJC
									RθJC = 1.65°C/W MAX
									D CURVES APPLY FOR POWER
			0.02						PULSE TRAIN SHOWN
									READ TIME AT t1
		0.01	0.01						TJ(pk) − TC = P(pk) ZθJC(t)
			0.00001	0.0001	0.001	0.01	0.1	1.0	10	100	1000

t, TIME (s)

Figure 2. Thermal Response

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

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