ON Semiconductor MJL21193, MJL21193G, MJL21194, MJL21194G Service Manual

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MJL21193, MJL21194

Preferred Device

Silicon Power Transistors

The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

Total Harmonic Distortion Characterized

High DC Current Gain

hFE = 25 Min @ IC

= 8 Adc

Excellent Gain Linearity

High SOA: 2.25 A, 80 V, 1 Second

PbFree Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector−Emitter Voltage

VCEO

250

Vdc

Collector−Base Voltage

VCBO

400

Vdc

Emitter−Base Voltage

VEBO

5

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

400

Vdc

Collector Current − Continuous

IC

16

Adc

Peak (Note 1)

 

30

 

 

 

 

 

Base Current − Continuous

IB

5

Adc

Total Power Dissipation @ TC = 25_C

PD

200

W

Derate above 25_C

 

1.43

W/_C

Operating and Storage Junction

TJ, Tstg

−65 to

_C

Temperature Range

 

+150

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Case

RqJC

0.7

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

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16 AMPERE COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 200 WATTS

 

 

MARKING

 

 

DIAGRAM

 

 

MJL2119x

 

 

AYYWWG

 

TO−3PBL

 

 

(TO−264)

 

 

CASE 340G

 

x

= 3 or 4

 

A

= Assembly Location

YY

= Year

 

WW

= Work Week

G

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

MJL21193

TO−264

25 Units / Rail

MJL21193G

TO−264

25 Units / Rail

 

(Pb−Free)

 

MJL21194

TO−264

25 Units / Rail

MJL21194G

TO−264

25 Units / Rail

 

(Pb−Free)

 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2007

1

Publication Order Number:

January, 2007 − Rev. 5

 

MJL21193/D

ON Semiconductor MJL21193, MJL21193G, MJL21194, MJL21194G Service Manual

 

 

 

 

MJL21193, MJL21194

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage

 

 

 

VCEO(sus)

250

Vdc

 

(IC = 100 mAdc, IB = 0)

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

ICEO

100

mAdc

 

(VCE = 200 Vdc, IB = 0)

 

 

 

 

 

 

 

 

Emitter Cutoff Current

 

 

 

IEBO

100

mAdc

 

(VCE = 5 Vdc, IC = 0)

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

ICEX

100

mAdc

 

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

 

 

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

 

 

IS/b

 

 

 

Adc

 

(VCE = 50 Vdc, t = 1 s (non−repetitive)

 

 

 

 

4.0

 

 

(VCE = 80 Vdc, t = 1 s (non−repetitive)

 

 

 

 

2.25

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

hFE

 

 

 

 

 

(IC = 8 Adc, VCE = 5 Vdc)

 

 

 

 

25

75

 

 

(IC = 16 Adc, IB = 5 Adc)

 

 

 

 

8

 

Base−Emitter On Voltage

 

 

 

VBE(on)

2.2

Vdc

 

(IC = 8 Adc, VCE = 5 Vdc)

 

 

 

 

 

 

 

 

Collector−Emitter Saturation Voltage

 

 

 

VCE(sat)

 

 

 

Vdc

 

(IC = 8 Adc, IB = 0.8 Adc)

 

 

 

 

1.4

 

 

(IC = 16 Adc, IB = 3.2 Adc)

 

 

 

 

4

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

Total Harmonic Distortion at the Output

 

 

 

THD

 

 

 

%

 

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS

hFE

 

 

 

 

 

 

 

 

 

 

 

unmatched

 

 

 

0.8

 

 

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

 

 

 

 

 

 

 

 

 

 

 

matched

 

 

 

0.08

 

Current Gain Bandwidth Product

 

 

 

fT

4

MHz

 

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

 

 

 

 

 

 

 

 

Output Capacitance

 

 

 

Cob

500

pF

 

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

 

 

 

 

 

 

 

 

(MHz)

 

 

PNP MJL21193

 

(MHz)

 

 

NPN MJL21194

 

6.5

 

 

 

8.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PRODUCT

5.5

VCE = 10 V

 

PRODUCT

6.0

 

 

 

 

 

 

6.0

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 V

BANDWIDTH

4.5

5 V

 

BANDWIDTH

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 5 V

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

 

 

 

GAIN

3.0

 

 

 

 

 

4.0

 

 

 

2.0

 

 

 

 

 

CURRENTf, T

 

 

 

CURRENT,f T

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

TJ

= 25°C

 

0

TJ = 25°C

 

 

 

 

 

3.5

ftest = 1 MHz

 

 

1.0

ftest = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

1.0

10

 

0.1

 

 

1.0

 

10

 

 

 

IC COLLECTOR CURRENT (AMPS)

 

 

 

IC COLLECTOR CURRENT (AMPS)

 

Figure 1. Typical Current Gain Bandwidth Product

Figure 2. Typical Current Gain Bandwidth Product

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