MJL21193, MJL21194
Preferred Device
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
•Total Harmonic Distortion Characterized
•High DC Current Gain −
hFE = 25 Min @ IC
= 8 Adc
•Excellent Gain Linearity
•High SOA: 2.25 A, 80 V, 1 Second
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Collector−Emitter Voltage |
VCEO |
250 |
Vdc |
Collector−Base Voltage |
VCBO |
400 |
Vdc |
Emitter−Base Voltage |
VEBO |
5 |
Vdc |
Collector−Emitter Voltage − 1.5 V |
VCEX |
400 |
Vdc |
Collector Current − Continuous |
IC |
16 |
Adc |
Peak (Note 1) |
|
30 |
|
|
|
|
|
Base Current − Continuous |
IB |
5 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
200 |
W |
Derate above 25_C |
|
1.43 |
W/_C |
Operating and Storage Junction |
TJ, Tstg |
−65 to |
_C |
Temperature Range |
|
+150 |
|
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|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
RqJC |
0.7 |
_C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
|
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MARKING |
|
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DIAGRAM |
|
|
MJL2119x |
|
|
AYYWWG |
|
TO−3PBL |
|
|
(TO−264) |
|
|
CASE 340G |
|
x |
= 3 or 4 |
|
A |
= Assembly Location |
|
YY |
= Year |
|
WW |
= Work Week |
|
G |
= Pb−Free Package |
|
ORDERING INFORMATION |
||
Device |
Package |
Shipping† |
MJL21193 |
TO−264 |
25 Units / Rail |
MJL21193G |
TO−264 |
25 Units / Rail |
|
(Pb−Free) |
|
MJL21194 |
TO−264 |
25 Units / Rail |
MJL21194G |
TO−264 |
25 Units / Rail |
|
(Pb−Free) |
|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
January, 2007 − Rev. 5 |
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MJL21193/D |
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MJL21193, MJL21194 |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage |
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VCEO(sus) |
250 |
− |
− |
Vdc |
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(IC = 100 mAdc, IB = 0) |
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Collector Cutoff Current |
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ICEO |
− |
− |
100 |
mAdc |
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(VCE = 200 Vdc, IB = 0) |
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Emitter Cutoff Current |
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IEBO |
− |
− |
100 |
mAdc |
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(VCE = 5 Vdc, IC = 0) |
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Collector Cutoff Current |
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ICEX |
− |
− |
100 |
mAdc |
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(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) |
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SECOND BREAKDOWN |
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Second Breakdown Collector Current with Base Forward Biased |
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IS/b |
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Adc |
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(VCE = 50 Vdc, t = 1 s (non−repetitive) |
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4.0 |
− |
− |
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(VCE = 80 Vdc, t = 1 s (non−repetitive) |
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2.25 |
− |
− |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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(IC = 8 Adc, VCE = 5 Vdc) |
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25 |
− |
75 |
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(IC = 16 Adc, IB = 5 Adc) |
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8 |
− |
− |
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Base−Emitter On Voltage |
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VBE(on) |
− |
− |
2.2 |
Vdc |
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(IC = 8 Adc, VCE = 5 Vdc) |
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Collector−Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 8 Adc, IB = 0.8 Adc) |
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− |
− |
1.4 |
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(IC = 16 Adc, IB = 3.2 Adc) |
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− |
− |
4 |
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DYNAMIC CHARACTERISTICS |
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Total Harmonic Distortion at the Output |
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THD |
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% |
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VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS |
hFE |
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unmatched |
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|
− |
0.8 |
− |
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(Matched pair hFE = 50 @ 5 A/5 V) |
hFE |
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matched |
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− |
0.08 |
− |
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Current Gain Bandwidth Product |
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fT |
4 |
− |
− |
MHz |
|||
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(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) |
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Output Capacitance |
|
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|
Cob |
− |
− |
500 |
pF |
|||
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(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) |
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(MHz) |
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PNP MJL21193 |
|
(MHz) |
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NPN MJL21194 |
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6.5 |
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8.0 |
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PRODUCT |
5.5 |
VCE = 10 V |
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PRODUCT |
6.0 |
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6.0 |
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7.0 |
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10 V |
BANDWIDTH |
4.5 |
5 V |
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BANDWIDTH |
5.0 |
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5.0 |
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VCE = 5 V |
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4.0 |
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GAIN |
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GAIN |
3.0 |
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4.0 |
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2.0 |
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CURRENTf, T |
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CURRENT,f T |
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3.0 |
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TJ |
= 25°C |
|
0 |
TJ = 25°C |
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3.5 |
ftest = 1 MHz |
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1.0 |
ftest = 1 MHz |
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0.1 |
|
1.0 |
10 |
|
0.1 |
|
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1.0 |
|
10 |
|
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|
IC COLLECTOR CURRENT (AMPS) |
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|
IC COLLECTOR CURRENT (AMPS) |
|
Figure 1. Typical Current Gain Bandwidth Product |
Figure 2. Typical Current Gain Bandwidth Product |
http://onsemi.com
2