ON Semiconductor MJF6388, MJF6388G, MJF6668, MJF6668G Service Manual

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MJF6388 (NPN),

MJF6668 (PNP)

Preferred Device

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for generalpurpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Features

Isolated Overmold Package, TO220 Type

Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and TIP107

100 VCEO(sus)

10 A Rated Collector Current

No Isolating Washers Required

Reduced System Cost

High DC Current Gain 1000 (Min) @ IC = 5.0 Adc

High Isolation Voltage (up to 4500 VRMS)

Case 221D is UL Recognized at 3500 VRMS: File #E69369

PbFree Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

 

 

Collector−Emitter Voltage

VCEO

100

Vdc

 

Collector−Base Voltage

VCB

100

Vdc

 

Emitter−Base Voltage

VEB

5.0

Vdc

 

RMS Isolation Voltage (Note 1)

VISOL

 

V

 

(t = 0.3 sec, R.H. 30%, TA = 25_C)

 

4500

 

 

Per Figure 14

 

 

 

 

Collector Current − Continuous

IC

10

Adc

 

− Peak (Note 2)

 

15

 

 

 

 

 

 

 

Base Current − Continuous

IB

1.0

Adc

 

Total Power Dissipation (Note 3) @ TC = 25_C

PD

40

W

 

Derate above 25_C

 

0.31

W/_C

 

Total Power Dissipation @ TA = 25_C

PD

2.0

W

 

Derate above 25_C

 

0.016

W/_C

 

Operating and Storage Temperature Range

TJ, Tstg

–65 to +150

_C

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction−to−Case (Note 3)

RqJC

4.0

_C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

_C/W

Lead Temperature for Soldering Purposes

TL

260

_C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Proper strike and creepage distance must be provided.

2.Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

3.Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs.

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COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES

100 VOLTS, 40 WATTS

NPN

PNP

COLLECTOR 2

COLLECTOR 2

BASE

BASE

1

1

EMITTER 3

EMITTER 3

MJF6388

MJF6668

 

 

 

MARKING

 

 

 

 

 

DIAGRAM

 

 

 

 

TO−220 FULLPACK

 

 

 

 

 

 

 

 

MJF6xy8G

 

 

 

 

CASE 221D

 

 

 

 

AYWW

 

1 2

 

 

STYLE 2

 

 

 

 

 

3

UL RECOGNIZED

 

 

 

 

 

 

 

MJF6xy8

= Specific Device Code

 

 

 

 

 

x = 3 or 6

 

 

 

 

 

y = 6 or 8

 

 

G

 

= Pb−Free Package

 

 

A

 

= Assembly Location

 

 

Y

 

= Year

 

 

WW

 

= Work Week

 

 

 

 

 

 

 

 

ORDERING INFORMATION

 

 

 

 

 

Device

 

Package

Shipping

 

 

 

 

 

MJF6388

 

TO−220 FULLPACK

50 Units/Rail

 

 

 

 

 

MJF6388G

 

TO−220 FULLPACK

50 Units/Rail

 

 

 

(Pb−Free)

 

 

 

 

 

 

 

MJF6668

 

TO−220 FULLPACK

50 Units/Rail

 

 

 

 

 

MJF6668G

 

TO−220 FULLPACK

50 Units/Rail

 

 

 

(Pb−Free)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*For additional information on our Pb−Free strategy and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2008

1

Publication Order Number:

September, 2008 − Rev. 10

 

MJF6388/D

MJF6388 (NPN), MJF6668 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector−Emitter Sustaining Voltage (Note 4)

 

VCEO(sus)

100

 

Vdc

 

(IC = 30 mAdc, IB = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICEO

 

10

mAdc

 

(VCE = 80 Vdc, IB = 0)

 

 

 

 

 

 

 

Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc)

 

ICEX

 

10

mAdc

 

Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

 

 

3.0

mAdc

 

Collector Cutoff Current

 

ICBO

 

10

mAdc

 

(VCB = 100 Vdc, IE = 0)

 

 

 

 

 

 

 

Emitter Cutoff Current

 

IEBO

2.0

mAdc

 

(VBE = 5.0 Vdc, IC = 0)

 

 

 

 

 

 

 

ON CHARACTERISTICS (Note 4)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

 

hFE

3000

 

15000

 

DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)

 

 

1000

 

 

 

DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc)

 

 

200

 

 

 

DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)

 

 

100

 

 

 

Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)

 

VCE(sat)

 

2.0

Vdc

 

Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

 

 

 

2.0

 

 

Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

 

 

 

2.5

 

 

Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)

 

 

 

3.0

 

 

Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

 

VBE(sat)

2.8

Vdc

 

Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)

 

 

4.5

 

 

Base−Emitter On Voltage

 

VBE(on)

2.5

Vdc

 

(IC = 8.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Small−Signal Current Gain

 

|hfe|

20

 

 

(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

 

 

 

 

 

 

 

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MJF6388

Cob

 

200

pF

 

 

MJF6668

 

 

 

300

 

 

 

 

 

 

 

 

 

 

Insulation Capacitance

 

Cc−hs

3.0 Typ

pF

 

(Collector−to−External Heatsink)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Small−Signal Current Gain

 

hfe

1000

 

 

(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

 

 

 

 

 

 

 

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

 

 

 

 

 

 

 

NPN

PNP

MJF6388

MJF6668

 

COLLECTOR

 

COLLECTOR

BASE

 

BASE

 

8 k

120

8 k

120

 

EMITTER

 

EMITTER

Figure 1. Darlington Schematic

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ON Semiconductor MJF6388, MJF6388G, MJF6668, MJF6668G Service Manual

MJF6388 (NPN), MJF6668 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

 

 

+ 30 V

 

 

D1, MUST BE FAST RECOVERY TYPES, e.g.,

 

 

 

 

 

 

ÇMUR110 USED ABOVE IB 100 mA

 

 

 

 

RC

 

 

ÇMSD6100 USED BELOW IB 100 mA

SCOPE

TUT

 

 

 

 

 

 

 

 

 

V1

RB

 

 

APPROX.

 

 

 

+12 V

 

 

 

51

D1

É8 k

É120

V2

 

 

 

 

 

 

 

 

 

APPROX.

 

 

 

 

 

 

 

 

- 4 V

 

 

 

 

 

 

 

-Ê8 V

 

 

 

 

 

 

 

 

 

25 ms

 

 

 

 

 

tr, tf 10 ns

FOR td AND tr, D1 IS DISCONNECTED

DUTY CYCLE = 1%

AND V2 = 0

 

 

 

 

 

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

Figure 2. Switching Times Test Circuit

 

NPN

 

 

 

 

 

 

MJF6388

 

 

 

 

 

 

7

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

3

ts

 

 

 

 

 

 

 

 

 

 

 

 

(ÇÉs)μ

 

 

tf

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

t, TIME

0.7

 

 

 

tr

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

VCC = 30 V

 

 

 

 

 

 

0.2

 

 

 

td

 

 

I /I = 250

 

 

 

 

 

 

C B

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

 

0.1

TJ = 25°C

 

 

 

 

 

 

0.07

 

 

1

 

 

 

 

0.1

0.2

0.5

2

5

10

IC, COLLECTOR CURRENT (AMPS)

 

PNP

 

 

 

 

 

 

 

 

 

MJF6668

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

VCC = 30 V

 

 

 

 

5

 

tr

 

IC/IB = 250

 

 

 

3

 

 

IB1 = IB2

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

(ÇÉs)μ

2

 

 

ts

TIME

1

 

0.7

 

t,

 

0.5

 

 

 

 

0.3

td

 

0.2

tf

0.1

 

 

 

 

1

 

3

 

7

 

0.1

0.2

0.3

0.5

0.7

2

5

10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Typical Switching Times

 

20

 

 

 

 

 

 

 

 

(AMPS)

10

 

 

 

 

 

 

100 ms

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

1Éms

 

3

 

 

 

 

 

 

 

CURRENT

TJ = 150°C

 

 

dc

 

 

2

 

 

 

 

 

1

 

 

 

 

5 ms

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR

0.5

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

0.2

 

CURRENT LIMIT

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

SECONDARY BREAKDOWN LIMIT

 

 

 

,

 

 

THERMAL LIMIT @ T

= 25°C

 

 

 

C

 

 

 

 

 

I

0.05

 

(SINGLE PULSE)

C

 

 

 

 

 

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

2

3

5

10

20

30

50

100

 

1

 

 

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

 

Figure 4. Maximum Forward Bias

Safe Operating Area

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