MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Features
•Isolated Overmold Package, TO−220 Type
•Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and TIP107
•100 VCEO(sus)
•10 A Rated Collector Current
•No Isolating Washers Required
•Reduced System Cost
•High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc
•High Isolation Voltage (up to 4500 VRMS)
•Case 221D is UL Recognized at 3500 VRMS: File #E69369
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
|
|
Collector−Emitter Voltage |
VCEO |
100 |
Vdc |
|
Collector−Base Voltage |
VCB |
100 |
Vdc |
|
Emitter−Base Voltage |
VEB |
5.0 |
Vdc |
|
RMS Isolation Voltage (Note 1) |
VISOL |
|
V |
|
(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) |
|
4500 |
|
|
Per Figure 14 |
|
|
|
|
Collector Current − Continuous |
IC |
10 |
Adc |
|
− Peak (Note 2) |
|
15 |
|
|
|
|
|
|
|
Base Current − Continuous |
IB |
1.0 |
Adc |
|
Total Power Dissipation (Note 3) @ TC = 25_C |
PD |
40 |
W |
|
Derate above 25_C |
|
0.31 |
W/_C |
|
Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
W |
|
Derate above 25_C |
|
0.016 |
W/_C |
|
Operating and Storage Temperature Range |
TJ, Tstg |
–65 to +150 |
_C |
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case (Note 3) |
RqJC |
4.0 |
_C/W |
Thermal Resistance, Junction−to−Ambient |
RqJA |
62.5 |
_C/W |
Lead Temperature for Soldering Purposes |
TL |
260 |
_C |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.Proper strike and creepage distance must be provided.
2.Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3.Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES
100 VOLTS, 40 WATTS
NPN |
PNP |
COLLECTOR 2 |
COLLECTOR 2 |
BASE |
BASE |
1 |
1 |
EMITTER 3 |
EMITTER 3 |
MJF6388 |
MJF6668 |
|
|
|
MARKING |
|
|
|
|
|
DIAGRAM |
|
|
|
|
TO−220 FULLPACK |
|
|
|
|
|
|
|
||
|
|
MJF6xy8G |
|
||
|
|
|
CASE 221D |
|
|
|
|
|
AYWW |
|
|
1 2 |
|
|
STYLE 2 |
|
|
|
|
|
|
||
3 |
UL RECOGNIZED |
|
|
||
|
|
|
|
|
|
MJF6xy8 |
= Specific Device Code |
|
|
||
|
|
|
x = 3 or 6 |
|
|
|
|
|
y = 6 or 8 |
|
|
G |
|
= Pb−Free Package |
|
|
|
A |
|
= Assembly Location |
|
|
|
Y |
|
= Year |
|
|
|
WW |
|
= Work Week |
|
|
|
|
|
|
|
|
|
|
ORDERING INFORMATION |
||||
|
|
|
|
|
|
Device |
|
Package |
Shipping |
||
|
|
|
|
|
|
MJF6388 |
|
TO−220 FULLPACK |
50 Units/Rail |
||
|
|
|
|
|
|
MJF6388G |
|
TO−220 FULLPACK |
50 Units/Rail |
||
|
|
|
(Pb−Free) |
|
|
|
|
|
|
|
|
MJF6668 |
|
TO−220 FULLPACK |
50 Units/Rail |
||
|
|
|
|
|
|
MJF6668G |
|
TO−220 FULLPACK |
50 Units/Rail |
||
|
|
|
(Pb−Free) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
*For additional information on our Pb−Free strategy and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
♥ Semiconductor Components Industries, LLC, 2008 |
1 |
Publication Order Number: |
September, 2008 − Rev. 10 |
|
MJF6388/D |
MJF6388 (NPN), MJF6668 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage (Note 4) |
|
VCEO(sus) |
100 |
|
− |
Vdc |
|
(IC = 30 mAdc, IB = 0) |
|
|
|
|
|
|
|
Collector Cutoff Current |
|
ICEO |
− |
|
10 |
mAdc |
|
(VCE = 80 Vdc, IB = 0) |
|
|
|
|
|
|
|
Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) |
|
ICEX |
− |
|
10 |
mAdc |
|
Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) |
|
− |
|
3.0 |
mAdc |
|
|
Collector Cutoff Current |
|
ICBO |
− |
|
10 |
mAdc |
|
(VCB = 100 Vdc, IE = 0) |
|
|
|
|
|
|
|
Emitter Cutoff Current |
|
IEBO |
− |
2.0 |
mAdc |
|
|
(VBE = 5.0 Vdc, IC = 0) |
|
|
|
|
|
|
|
ON CHARACTERISTICS (Note 4) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) |
|
hFE |
3000 |
|
15000 |
− |
|
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) |
|
|
1000 |
|
− |
|
|
DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc) |
|
|
200 |
|
− |
|
|
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) |
|
|
100 |
|
− |
|
|
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) |
|
VCE(sat) |
− |
|
2.0 |
Vdc |
|
Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) |
|
|
− |
|
2.0 |
|
|
Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) |
|
|
− |
|
2.5 |
|
|
Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) |
|
|
− |
|
3.0 |
|
|
Base−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) |
|
VBE(sat) |
− |
2.8 |
Vdc |
|
|
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) |
|
|
− |
4.5 |
|
|
|
Base−Emitter On Voltage |
|
VBE(on) |
− |
2.5 |
Vdc |
|
|
(IC = 8.0 Adc, VCE = 4.0 Vdc) |
|
|
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Small−Signal Current Gain |
|
|hfe| |
20 |
|
− |
− |
|
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |
|
|
|
|
|
|
|
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
MJF6388 |
Cob |
− |
|
200 |
pF |
|
|
MJF6668 |
|
|
|
300 |
|
|
|
|
|
|
|
|
|
|
Insulation Capacitance |
|
Cc−hs |
− |
3.0 Typ |
pF |
|
|
(Collector−to−External Heatsink) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Small−Signal Current Gain |
|
hfe |
1000 |
|
− |
− |
|
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) |
|
|
|
|
|
|
|
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
|
|
|
|
|
|
|
NPN |
PNP |
MJF6388 |
MJF6668 |
|
COLLECTOR |
|
COLLECTOR |
BASE |
|
BASE |
|
≈ 8 k |
≈ 120 |
≈ 8 k |
≈ 120 |
|
EMITTER |
|
EMITTER |
Figure 1. Darlington Schematic
http://onsemi.com
2
MJF6388 (NPN), MJF6668 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
|
|
||
+ 30 V |
|
|
|||
D1, MUST BE FAST RECOVERY TYPES, e.g., |
|
|
|||
|
|
|
|
||
ÇMUR110 USED ABOVE IB ≈ 100 mA |
|
|
|
|
|
RC |
|
|
|||
ÇMSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
||||
TUT |
|
||||
|
|
|
|
||
|
|
|
|
V1 |
RB |
|
|
APPROX. |
|
|
|
+12 V |
|
|
|
51 |
D1 |
Ń8 k |
Ń120 |
V2 |
|
|
|
|
|
|
|
|
|
||||
APPROX. |
|
|
|
|
|
|
|
|
- 4 V |
||||
|
|
|
|
|
|
|
|||||||
-Ê8 V |
|
|
|
|
|
|
|
||||||
|
|
25 ms |
|||||||||||
|
|
|
|
|
|||||||||
tr, tf ≤ 10 ns |
FOR td AND tr, D1 IS DISCONNECTED |
||||||||||||
DUTY CYCLE = 1% |
AND V2 = 0 |
||||||||||||
|
|
|
|
|
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. |
Figure 2. Switching Times Test Circuit
|
NPN |
|
|
|
|
|
|
|
MJF6388 |
|
|
|
|
|
|
|
7 |
|
|
|
|
|
|
|
5 |
|
|
|
|
|
|
|
3 |
ts |
|
|
|
|
|
|
|
|
|
|
|
|
|
(ÇÉs)μ |
|
|
tf |
|
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t, TIME |
0.7 |
|
|
|
tr |
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
0.3 |
VCC = 30 V |
|
|
|
|
|
|
0.2 |
|
|
|
td |
|
|
|
I /I = 250 |
|
|
|
|
||
|
|
C B |
|
|
|
|
|
|
|
IB1 = IB2 |
|
|
|
|
|
|
0.1 |
TJ = 25°C |
|
|
|
|
|
|
0.07 |
|
|
1 |
|
|
|
|
0.1 |
0.2 |
0.5 |
2 |
5 |
10 |
IC, COLLECTOR CURRENT (AMPS)
|
PNP |
|
|
|
|
|
|
|
|
||
|
MJF6668 |
|
|
|
|
|
|
|
|
||
10 |
|
|
|
|
|
|
|
|
|
|
|
7 |
|
|
|
VCC = 30 V |
|
||||||
|
|
|
|||||||||
5 |
|
tr |
|
IC/IB = 250 |
|
||||||
|
|
||||||||||
3 |
|
|
IB1 = IB2 |
|
|||||||
|
|
|
|||||||||
|
|
|
|
||||||||
|
|
|
TJ = 25°C |
|
|||||||
|
|
|
|
||||||||
|
|
|
|
|
(ÇÉs)μ |
2 |
|
|
|
ts |
||
TIME |
1 |
||
|
|||
0.7 |
|
||
t, |
|
||
0.5 |
|
||
|
|
||
|
0.3 |
td |
|
|
0.2 |
tf |
0.1 |
|
|
|
|
1 |
|
3 |
|
7 |
|
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
2 |
5 |
10 |
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Typical Switching Times
|
20 |
|
|
|
|
|
|
|
|
(AMPS) |
10 |
|
|
|
|
|
|
100 ms |
|
|
|
|
|
|
|
|
|
||
5 |
|
|
|
|
|
|
1Éms |
|
|
3 |
|
|
|
|
|
|
|
||
CURRENT |
TJ = 150°C |
|
|
dc |
|
|
|||
2 |
|
|
|
|
|
||||
1 |
|
|
|
|
5 ms |
|
|
|
|
|
|
|
|
|
|
|
|
||
COLLECTOR |
0.5 |
|
|
|
|
|
|
|
|
0.3 |
|
|
|
|
|
|
|
|
|
0.2 |
|
CURRENT LIMIT |
|
|
|
|
|
||
|
|
|
|
|
|
|
|||
0.1 |
|
SECONDARY BREAKDOWN LIMIT |
|
|
|
||||
, |
|
|
THERMAL LIMIT @ T |
= 25°C |
|
|
|
||
C |
|
|
|
|
|
||||
I |
0.05 |
|
(SINGLE PULSE) |
C |
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
0.03 |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
0.02 |
2 |
3 |
5 |
10 |
20 |
30 |
50 |
100 |
|
1 |
||||||||
|
|
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) |
|
Figure 4. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
3