MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Features
•Electrically Similar to the Popular MJE15030 and MJE15031
•150 VCEO(sus)
•8 A Rated Collector Current
•No Isolating Washers Required
•Reduced System Cost
•High Current Gain−Bandwidth Product −
fT = 30 MHz (Min) @ IC
=500 mAdc
•UL Recognized, File #E69369, to 3500 VRMS Isolation
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
Collector−Emitter Voltage |
VCEO |
150 |
Vdc |
|
Collector−Base Voltage |
VCB |
150 |
Vdc |
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Emitter−Base Voltage |
VEB |
5 |
Vdc |
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RMS Isolation Voltage (Note 1) |
VISOL |
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VRMS |
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(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C) |
|
4500 |
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Per Figure 11 |
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Collector Current − Continuous |
IC |
8 |
Adc |
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− Peak |
|
16 |
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Base Current |
IB |
2 |
Adc |
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Total Power Dissipation (Note 2) @ TC = 25_C |
PD |
36 |
W |
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Derate above 25_C |
|
0.016 |
W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
W |
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Derate above 25_C |
|
0.016 |
W/_C |
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Operating and Storage Temperature Range |
TJ, Tstg |
–65 to +150 |
_C |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Ambient |
RqJA |
62.5 |
_C/W |
Thermal Resistance, Junction−to−Case (Note 2) |
RqJC |
3.5 |
_C/W |
Lead Temperature for Soldering Purposes |
TL |
260 |
_C |
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.Proper strike and creepage distance must be provided.
2.Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
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COMPLEMENTARY SILICON POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
MARKING
DIAGRAM
1 2 |
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TO−220 FULLPACK |
MJF1503xG |
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CASE 221D |
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3 |
AYWW |
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STYLE 2 |
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MJF1503x = Specific Device Code
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x = 0 or 1 |
G |
= Pb−Free Package |
A |
= Assembly Location |
Y |
= Year |
WW |
= Work Week |
ORDERING INFORMATION
Device |
Package |
Shipping |
|
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MJF15030 |
TO−220 FULLPACK |
50 Units/Rail |
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MJF15030G |
TO−220 FULLPACK |
50 Units/Rail |
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(Pb−Free) |
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MJF15031 |
TO−220 FULLPACK |
50 Units/Rail |
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MJF15031G |
TO−220 FULLPACK |
50 Units/Rail |
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(Pb−Free) |
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*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
♥ Semiconductor Components Industries, LLC, 2008 |
1 |
Publication Order Number: |
July, 2008 − Rev. 6 |
|
MJF15030/D |
MJF15030 (NPN), MJF15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage (Note 3) |
VCEO(sus) |
150 |
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− |
Vdc |
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(IC = 10 mAdc, IB = 0) |
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Collector Cutoff Current |
ICEO |
− |
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10 |
mAdc |
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(VCE = 150 Vdc, IB = 0) |
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Collector Cutoff Current |
ICBO |
− |
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10 |
mAdc |
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(VCB = 150 Vdc, IE = 0) |
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Emitter Cutoff Current |
IEBO |
− |
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10 |
mAdc |
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(VBE = 5 Vdc, IC = 0) |
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ON CHARACTERISTICS (Note 3) |
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DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc) |
hFE |
40 |
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− |
− |
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(IC = 2 Adc, VCE = 2 Vdc) |
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40 |
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− |
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(IC = 3 Adc, VCE = 2 Vdc) |
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40 |
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− |
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(IC = 4 Adc, VCE = 2 Vdc) |
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20 |
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− |
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Typ |
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DC Current Gain Linearity |
hFE |
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2 |
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(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP) |
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3 |
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Collector−Emitter Saturation Voltage |
VCE(sat) |
− |
|
0.5 |
Vdc |
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(IC = 1 Adc, IB = 0.1 Adc) |
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Base−Emitter On Voltage |
VBE(on) |
− |
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1 |
Vdc |
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(IC = 1 Adc, VCE = 2 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current Gain − Bandwidth Product (Note 4) |
fT |
30 |
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− |
MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) |
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3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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4. |
fT = hfe• ftest. |
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(NORMALIZED) |
1 |
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0.5 |
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RESISTANCE |
0.3 |
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0.2 |
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0.1 |
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SINGLE PULSE |
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THERMAL |
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RqJC(t) = r(t) RqJC |
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0.05 |
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TJ(pk) - TC = P(pk) RqJC(t) |
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0.03 |
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TRANSIENT |
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0.02 |
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0.01 |
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r(t), |
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0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
3 |
5 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1K |
2K |
3K |
5K |
10K |
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t, TIME (ms)
Figure 1. Thermal Response
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