MJE15034 NPN,
MJE15035 PNP
Preferred Device
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers.
Features
•hFE = 100 (Min) @ IC = 0.5 Adc
=10 (Min) @ IC = 2.0 Adc
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
•TO−220AB Compact Package
•Epoxy meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Machine Model: C
Human Body Model: 3B
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector−Emitter Voltage |
VCEO |
350 |
Vdc |
Collector−Base Voltage |
VCB |
350 |
Vdc |
Emitter−Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current − Continuous |
IC |
4.0 |
Adc |
− Peak |
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8.0 |
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Base Current |
IB |
1.0 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
50 |
W |
Derate above 25_C |
|
0.40 |
W/_C |
Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
W |
Derate above 25_C |
|
0.016 |
W/_C |
Operating and Storage Junction |
TJ, Tstg |
–65 to +150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction−to−Case |
RqJC |
2.5 |
_C/W |
Thermal Resistance, Junction−to−Ambient |
RqJA |
62.5 |
_C/W |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
4
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TO−220AB |
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CASE 221A |
1 |
STYLE 1 |
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2 |
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3 |
MARKING DIAGRAM
MJE1503xG
AYWW
MJE1503x |
= Device Code |
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x = 4 or 5 |
A |
= Location Code |
Y |
= Year |
WW |
= Work Week |
G |
= Pb−Free Package |
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ORDERING INFORMATION
Device |
Package |
Shipping |
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MJE15034 |
TO−220AB |
50 Units / Rail |
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MJE15034G |
TO−220AB |
50 Units / Rail |
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(Pb−Free) |
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MJE15035 |
TO−220AB |
50 Units / Rail |
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MJE15035G |
TO−220AB |
50 Units / Rail |
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(Pb−Free) |
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Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2006 |
1 |
Publication Order Number: |
January, 2006 − Rev. 3 |
|
MJE15034/D |
MJE15034 NPN, MJE15035 PNP
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector−Emitter Sustaining Voltage (Note 1) |
(IC = 10 mAdc, IB = 0) |
VCEO(sus) |
350 |
− |
Vdc |
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Collector Cutoff Current |
(VCB = 350 Vdc, IE = 0) |
ICBO |
− |
10 |
mAdc |
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Emitter Cutoff Current |
(VBE = 5.0 Vdc, IC = 0) |
IEBO |
− |
10 |
mAdc |
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ON CHARACTERISTICS (Note 1) |
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DC Current Gain |
(IC = 0.1 Adc, VCE = 5.0 Vdc) |
hFE |
100 |
− |
− |
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(IC = 0.5 Adc, VCE = 5.0 Vdc) |
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100 |
− |
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(IC = 1.0 Adc, VCE = 5.0 |
Vdc) |
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50 |
− |
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(IC = 2.0 Adc, VCE = 5.0 |
Vdc) |
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10 |
− |
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Collector−Emitter Saturation Voltage |
(IC = 1.0 Adc, IB = 0.1 |
Adc) |
VCE(sat) |
− |
0.5 |
Vdc |
Base−Emitter On Voltage |
(IC = 1.0 Adc, VCE = 5.0 |
Vdc) |
VBE(on) |
− |
1.0 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Current Gain − Bandwidth Product (Note 2) |
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fT |
30 |
− |
MHz |
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
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2. |
fT = hfe• ftest. |
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TA |
TC |
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10 |
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CURRENT (AMPS) |
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DISSIPATION (WATTS) |
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100mS |
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3.0 |
60 |
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1.0 |
DC |
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2.0 |
40 |
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, POWER |
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TC |
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COLLECTOR |
0.1 |
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1.0 |
20 |
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TA |
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D |
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P |
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, |
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C |
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0 |
0 |
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I |
0.01 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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1.0 |
10 |
100 |
1000 |
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T, TEMPERATURE (°C) |
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VCE, COLLECTOR−EMITTER VOLTAGE (V) |
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Figure 1. Power Derating |
Figure 2. Active Region Safe Operating Area |
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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0.3 |
0.2 |
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0.2 |
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0.1 |
0.1 |
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P(pk) |
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ZqJC(t) = r(t) RqJC |
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0.07 |
0.05 |
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° |
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0.05 |
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RqJC = 2.5 C/W MAX |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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0.03 |
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t1 |
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READ TIME AT t1 |
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t |
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0.02 |
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TJ(pk) − TC = P(pk) |
ZqJC(t) |
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2 |
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0.01 |
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DUTY CYCLE, D = t1/t2 |
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SINGLE PULSE |
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0.01 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
t, TIME (ms)
Figure 3. Thermal Response
http://onsemi.com
2
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