MJE15032 (NPN),
MJE15033 (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
Designed for use as high−frequency drivers in audio amplifiers.
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Features
• DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc
=10 (Min) @ IC = 2.0 Adc
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033
• High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
•TO−220AB Compact Package
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Machine Model C
Human Body Model 3B
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Collector−Emitter Voltage |
VCEO |
250 |
Vdc |
Collector−Base Voltage |
VCB |
250 |
Vdc |
Emitter−Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current − Continuous |
IC |
8.0 |
Adc |
− Peak |
|
16 |
|
|
|
|
|
Base Current |
IB |
2.0 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
50 |
W |
Derate above 25_C |
|
0.40 |
W/_C |
Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
W |
Derate above 25_C |
|
0.016 |
W/_C |
Operating and Storage Junction |
TJ, Tstg |
– 65 to |
_C |
Temperature Range |
|
+150 |
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, |
RqJC |
2.5 |
_C/W |
Junction−to−Case |
|
|
|
|
|
|
|
Thermal Resistance, |
RqJA |
62.5 |
_C/W |
Junction−to−Ambient |
|
|
|
|
|
|
|
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
8.0 AMPERES
POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
|
A YW |
|
TO−220 |
MJE1503xG |
|
AKA |
||
CASE 221A |
||
|
||
STYLE 1 |
|
1
2 3
MJE1503x = Specific Device Code
x |
= 2 or 3 |
A |
= Assembly Location |
Y |
= Year |
W |
= Work Week |
G |
= Pb−Package |
ORDERING INFORMATION
Device |
Package |
Shipping† |
MJE15032 |
TO−220 |
50 Units/Rail |
|
|
|
MJE15032G |
TO−220 |
50 Units/Rail |
|
(Pb−Free) |
|
|
|
|
MJE15033 |
TO−220 |
50 Units/Rail |
|
|
|
MJE15033G |
TO−220 |
50 Units/Rail |
|
(Pb−Free) |
|
|
|
|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2005 |
1 |
Publication Order Number: |
June, 2005 − Rev. 3 |
|
MJE15032/D |
MJE15032 (NPN), MJE15033 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage (Note 1) |
VCEO(sus) |
250 |
− |
Vdc |
|
(IC = 10 mAdc, IB = 0) |
|
|
|
|
|
Collector Cutoff Current |
ICBO |
− |
10 |
mAdc |
|
(VCB = 250 Vdc, IE = 0) |
|
|
|
|
|
Emitter Cutoff Current |
IEBO |
− |
10 |
mAdc |
|
(VBE = 5.0 Vdc, IC = 0) |
|
|
|
|
|
ON CHARACTERISTICS (Note 1) |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
hFE |
|
|
− |
|
(IC = 0.5 Adc, VCE = 5.0 Vdc) |
|
70 |
− |
|
|
(IC = 1.0 Adc, VCE = 5.0 Vdc) |
|
50 |
− |
|
|
(IC = 2.0 Adc, VCE = 5.0 Vdc) |
|
10 |
− |
|
|
Collector−Emitter Saturation Voltage |
VCE(sat) |
− |
0.5 |
Vdc |
|
(IC = 1.0 Adc, IB = 0.1 Adc) |
|
|
|
|
|
Base−Emitter On Voltage |
VBE(on) |
− |
1.0 |
Vdc |
|
(IC = 1.0 Adc, VCE = 5.0 Vdc) |
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current Gain − Bandwidth Product (Note 2) |
fT |
30 |
− |
MHz |
|
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
|
|
|
|
|
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
|
|
|
|
|
2. fT = hfe• ftest. |
|
|
|
|
|
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2