ON Semiconductor MJ21195, MJ21195G, MJ21196, MJ21196G Service Manual

MJ21195 − PNP

MJ21196 − NPN

Preferred Devices

Silicon Power Transistors

The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

•Total Harmonic Distortion Characterized

•High DC Current Gain − hFE = 25 Min @ IC = 8 Adc

•Excellent Gain Linearity

•High SOA: 3 A, 80 V, 1 Sec

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	VCEO	250	Vdc
Collector−Base Voltage	VCBO	400	Vdc
Emitter−Base Voltage	VEBO	5	Vdc
Collector−Emitter Voltage − 1.5V	VCEX	400	Vdc
Collector Current − Continuous	IC	16	Adc
− Peak (Note 1)		30
Base Current − Continuous	IB	5	Adc
Total Device Dissipation @ TC = 25_C	PD	250	W
Derate above 25_C		1.43	W/_C
Operating and Storage Junction	TJ, Tstg	−65 to +200	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristics	Symbol	Max	Unit
Thermal Resistance, Junction−to−Case	RqJC	0.7	_C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

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16 AMPERES

COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS

TO−204AA (TO−3)

CASE 1−07

MARKING DIAGRAM

MJ2119xG

AYWW

MEX

MJ2119x	=	Device Code
		x = 5 or 6
G	= Pb−Free Package
A	=	Assembly Location
Y	=	Year
WW	= Work Week
MEX	=	Country of Origin

ORDERING INFORMATION

			Device		Package	Shipping
			MJ21195		TO−204	100 Units / Tray
			MJ21195G		TO−204	100 Units / Tray
					(Pb−Free)
			MJ21196		TO−204	100 Units / Tray
			MJ21196G		TO−204	100 Units / Tray
					(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting	Techniques		Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D.			and best overall value.
♥ Semiconductor Components Industries, LLC, 2006	1				Publication Order Number:
February, 2006 − Rev. 4						MJ21195/D

MJ21195 − PNP		MJ21196 − NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic			Symbol	Min	Typical	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage			VCEO(sus)	250	−	−	Vdc
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current			ICEO	−	−	100	mAdc
(VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current			IEBO	−	−	100	mAdc
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current			ICEX	−	−	100	mAdc
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased			IS/b				Adc
(VCE = 50 Vdc, t = 1 s (non−repetitive)				5	−	−
(VCE = 80 Vdc, t = 1 s (non−repetitive)				2.5	−	−
ON CHARACTERISTICS
DC Current Gain			hFE			75	−
(IC = 8 Adc, VCE = 5 Vdc)				25	−
(IC = 16 Adc, VCE = 5 Vdc)				8	−
Base−Emitter On Voltage			VBE(on)	−	−	2.2	Vdc
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 8 Adc, IB = 0.8 Adc)				−	−	1.4
(IC = 16 Adc, IB = 3.2 Adc)				−	−	4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output			THD				%
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS	hFE
	unmatched			−	0.8	−
(Matched pair hFE = 50 @ 5 A/5 V)	hFE
	matched			−	0.08	−
Current Gain Bandwidth Product			fT	4	−	−	MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance			Cob	−	−	500	pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

f, CURRENT BANDWIDTH PRODUCT (MHz) T

PNP MJ21195

6.5
6.0				VCE = 10 V
5.5
5.0
						5 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
		TJ = 25°C
1.0
0.5		ftest = 1 MHz
0
	0.1				1.0																		10
					IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Bandwidth Product

f, CURRENT BANDWIDTH PRODUCT (MHz) T

NPN MJ21196

7.5
7.0
6.5
6.0
5.5
5.0													10 V
4.5
4.0
											VCE = 5 V
3.5
3.0
2.5
		TJ = 25°C
2.0
1.5		ftest = 1 MHz
1.0
	0.1			1.0																		10
				IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain Bandwidth Product

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