ON Semiconductor MCR12D, MCR12M, MCR12N Technical data

MCR12D

MCR12D, MCR12M, MCR12N

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half±wave silicon gate±controlled devices are needed.

•Blocking Voltage to 800 Volts

•On±State Current Rating of 12 Amperes RMS at 80°C

•High Surge Current Capability Ð 100 Amperes

•Rugged, Economical TO220AB Package

•Glass Passivated Junctions for Reliability and Uniformity

•Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design

•High Immunity to dv/dt Ð 100 V/μsec Minimum at 125°C

•Device Marking: Logo, Device Type, e.g., MCR12D, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Peak Repetitive Off±State Voltage(1)	VDRM,		Volts
(TJ = ±40 to 125°C, Sine Wave,	VRRM
50 to 60 Hz, Gate Open)		400
MCR12D
MCR12M		600
MCR12N		800
On-State RMS Current	IT(RMS)	12	A
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current	ITSM	100	A
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration	I2t	41	A2sec
(t = 8.33 ms)
Forward Peak Gate Power	PGM	5.0	Watts
(Pulse Width ≤ 1.0 μs, TC = 80°C)
Forward Average Gate Power	PG(AV)	0.5	Watts
(t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current	IGM	2.0	A
(Pulse Width ≤ 1.0 μs, TC = 80°C)
Operating Junction Temperature Range	TJ	± 40 to	°C
		+125
Storage Temperature Range	Tstg	± 40 to	°C
		+150

(1)VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

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SCRs

12 AMPERES RMS

400 thru 800 VOLTS

G

A K

4

1

2

	3
	TO±220AB
	CASE 221A
	STYLE 3
	PIN ASSIGNMENT
1	Cathode
2	Anode
3	Gate
4	Anode

ORDERING INFORMATION

Device	Package	Shipping
MCR12D	TO220AB	50 Units/Rail
MCR12M	TO220AB	50 Units/Rail
MCR12N	TO220AB	50 Units/Rail

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 1999	1	Publication Order Number:
December, 1999 ± Rev. 2		MCR12/D

MCR12D, MCR12M, MCR12N

THERMAL CHARACTERISTICS

Characteristic				Symbol		Value			Unit
Thermal Resistance Ð Junction to Case				RqJC		2.2			°C/W
Ð Junction to Ambient				RqJA		62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds					TL	260			°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic		Symbol			Min	Typ		Max	Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current	TJ = 25°C	IDRM,							mA
(VD = Rated VDRM and VRRM; Gate Open)		IRRM			Ð	Ð		0.01
	TJ = 125°C				Ð	Ð		2.0
ON CHARACTERISTICS
Peak Forward On±State Voltage* (ITM = 24 A)		VTM			Ð	Ð		2.2	Volts
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 W)		IGT			2.0	8.0		20	mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)		IH			4.0	20		40	mA
Latch Current (VD = 12 V, IG = 20 mA)		IL			6.0	25		60	mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 W)		VGT			0.5	0.65		1.0	Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off±State Voltage		dv/dt			100	250		Ð	V/ms
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On±State Current		di/dt			Ð	Ð		50	A/ms
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA
*Indicates Pulse Test: Pulse Width v2.0 ms, Duty Cycle v2%.

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MCR12D, MCR12M, MCR12N

Voltage Current Characteristic of SCR

Symbol	Parameter
VDRM	Peak Repetitive Off State Forward Voltage
IDRM	Peak Forward Blocking Current
VRRM	Peak Repetitive Off State Reverse Voltage
IRRM	Peak Reverse Blocking Current
VTM	Peak On State Voltage
IH	Holding Current

+ Current

Anode +

	VTM
on state
IRRM at VRRM	IH
	+ Voltage
Reverse Blocking Region	IDRM at VDRM
(off state)	Forward Blocking Region
Reverse Avalanche Region	(off state)
Anode ±

	125
(°C)	120
TEMPERATURE	115
	110
	105
CASE	100											dc
,
C
T	95
	90				30°		60°		90°		180°
	0	1	2	3	4	5	6	7	8	9	10	11	12
		IT(RMS), RMS ON±STATE CURRENT (AMPS)

(WATTS)	20
	18											dc
										180°
DISSIPATION	16
	14							90°
	12
POWER	10					30°
	8
,AVERAGE	6
	4
	2
(AV)
	0
P		1	2	3	4	5	6	7	8	9	10	11	12
	0

IT(AV), AVERAGE ON±STATE CURRENT (AMPS)

Figure 1. Typical RMS Current Derating

Figure 2. On±State Power Dissipation

	(AMPS)	100
		MAXIMUM @ TJ = 25°C
	CURRENT				MAXIMUM @ TJ = 125°C
		10
	ON±STATE
	,INSTANTANEOUS	1
		0.1
	T
		0.5	1.0	1.5	2.0	2.5	3.0
	I
		VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)

	20
	18
(mA)	16
CURRENT	14
	12
	10
TRIGGER
	8
	6
GATE
	4
	2
	0	±25
	±40		±10	5	20	35	50	65	80	95	110 125
			TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical On±State Characteristics	Figure 4. Typical Gate Trigger Current versus
	Junction Temperature

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