ON Semiconductor MAC15CD, MAC15CM, MAC15SN Technical data

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MAC15DM

MAC15SD, MAC15SM,

MAC15SN

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits

High Immunity to dv/dt Ð 25 V/ms minimum at 110_C

High Commutating di/dt Ð 8.0 A/ms minimum at 110_C

Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design

On-State Current Rating of 15 Amperes RMS at 70_C

High Surge Current Capability Ð 120 Amperes

Blocking Voltage to 800 Volts

Rugged, Economical TO220AB Package

Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

Device Marking: Logo, Device Type, e.g., MAC15SD, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

 

 

 

 

Peak Repetitive Off±State Voltage(1)

VDRM,

 

Volts

(TJ = ±40 to 110°C, Sine Wave, 50 to

VRRM

 

 

60Hz, Gate Open)

 

 

 

MAC15SD

 

400

 

MAC15SM

 

600

 

MAC15SN

 

800

 

 

 

 

 

On±State RMS Current

IT(RMS)

15

A

(Full Cycle Sine Wave, 60Hz,

 

 

 

TJ = 70°C)

 

 

 

Peak Non-repetitive Surge Current

ITSM

120

A

(One Full Cycle Sine Wave,

 

 

 

60 Hz, TJ = 110°C)

 

 

 

Circuit Fusing Consideration (t = 8.3 ms)

I2t

60

A2s

Peak Gate Power

PGM

20

Watts

(Pulse Width 1.0 μs, TC = 70°C)

 

 

 

Average Gate Power

PG(AV)

0.5

Watts

(t = 8.3 ms, TC = 70°C)

 

 

 

Operating Junction Temperature Range

TJ

± 40 to

°C

 

 

+110

 

 

 

 

 

Storage Temperature Range

Tstg

± 40 to

°C

 

 

+150

 

 

 

 

 

(1)VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

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TRIACS

15 AMPERES RMS

400 thru 800 VOLTS

MT2 MT1

G

4

1

2

 

3

 

TO±220AB

 

CASE 221A

 

STYLE 4

 

 

 

PIN ASSIGNMENT

 

 

1

Main Terminal 1

 

 

2

Main Terminal 2

 

 

3

Gate

 

 

4

Main Terminal 2

 

 

 

 

ORDERING INFORMATION

Device

Package

Shipping

 

 

 

MAC15SD

TO220AB

50 Units/Rail

 

 

 

MAC15SM

TO220AB

50 Units/Rail

 

 

 

MAC15SN

TO220AB

50 Units/Rail

 

 

 

 

 

 

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 1999

1

Publication Order Number:

January, 2000 ± Rev. 2

 

MAC15S/D

MAC15SD, MAC15SM, MAC15SN

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

 

 

 

 

Thermal Resistance

 

 

°C/W

Ð Junction to Case

RqJC

2.0

 

Ð Junction to Ambient

RqJA

62.5

 

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

TJ = 25°C

IDRM,

 

 

 

mA

(VD = Rated VDRM, VRRM; Gate Open)

IRRM

Ð

Ð

0.01

 

 

TJ = 110°C

 

Ð

Ð

2.0

 

ON CHARACTERISTICS

Peak On-State Voltage(1) (ITM = "21A)

VTM

Ð

Ð

1.8

Volts

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100W)

IGT

 

 

 

mA

MT2(+), G(+)

 

.8

2.0

5.0

 

MT2(+), G(±)

 

.8

3.0

5.0

 

MT2(±), G(±)

 

.8

3.0

5.0

 

 

 

 

 

 

 

Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA)

IH

1.0

3.0

10

mA

Latching Current (VD = 24V, IG = 5mA)

IL

 

 

 

mA

MT2(+), G(+)

 

2.0

5.0

15

 

MT2(+), G(±)

 

2.0

10

20

 

MT2(±), G(±)

 

2.0

5.0

15

 

 

 

 

 

 

 

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)

VGT

 

 

 

Volts

MT2(+), G(+)

 

0.45

0.62

1.5

 

MT2(+), G(±)

 

0.45

0.60

1.5

 

MT2(±), G(±)

 

0.45

0.65

1.5

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Rate of Change of Commutating Current

(di/dt)c

8.0

10

Ð

A/ms

(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,

 

 

 

 

 

Gate Open, TJ = 110_C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W,

 

 

 

 

 

see Figure 15.)

 

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off-State Voltage

dv/dt

25

75

Ð

V/ms

(VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110_C)

 

 

 

 

 

(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

 

 

 

 

 

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ON Semiconductor MAC15CD, MAC15CM, MAC15SN Technical data

MAC15SD, MAC15SM, MAC15SN

Voltage Current Characteristic of Triacs

(Bidirectional Device)

Symbol

Parameter

 

 

VDRM

Peak Repetitive Forward Off State Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Reverse Off State Voltage

IRRM

Peak Reverse Blocking Current

VTM

Maximum On State Voltage

IH

Holding Current

+ Current

 

 

Quadrant 1

 

VTM

MainTerminal 2 +

 

 

 

on state

 

IRRM at VRRM

IH

 

 

 

 

off state

+ Voltage

 

IH

IDRM at VDRM

Quadrant 3

VTM

 

MainTerminal 2 ±

 

 

 

Quadrant Definitions for a Triac

MT2 POSITIVE (Positive Half Cycle)

+

 

(+) MT2

(+) MT2

 

Quadrant II

(±) IGT

(+) IGT

Quadrant I

 

GATE

GATE

 

 

MT1

MT1

 

 

REF

REF

 

IGT ±

 

 

+ IGT

 

(±) MT2

(±) MT2

 

Quadrant III

(±) IGT

(+) IGT

Quadrant IV

 

GATE

GATE

 

 

MT1

MT1

 

 

REF

REF

 

±

MT2 NEGATIVE (Negative Half Cycle)

All polarities are referenced to MT1.

With in±phase signals (using standard AC lines) quadrants I and III are used.

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