MAC12
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.
•Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits
•Blocking Voltage to 800 Volts
•On-State Current Rating of 12 Amperes RMS at 70°C
•High Surge Current Capability - 90 Amperes
•Rugged, Economical TO220AB Package
•Glass Passivated Junctions for Reliability and Uniformity
•Maximum Values of IGT, VGT and IH Specified for Ease of Design
•High Commutating di/dt - 8.0 A/ms Minimum at 110°C
•Immunity to dV/dt - 15 V/ sec Minimum at 110°C
•Operational in Three Quadrants: Q1, Q2, and Q3
•Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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Peak Repetitive Off-State Voltage (Note 1) |
VDRM, |
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V |
(T = -40 to 110°C, Sine Wave, |
VRRM |
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J |
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50 to 60 Hz, Gate Open) |
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600 |
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MAC12SM |
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800 |
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MAC12SN |
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On-State RMS Current |
IT(RMS) |
12 |
A |
(All Conduction Angles; TC = 70°C) |
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Peak Non-Repetitive Surge Current |
ITSM |
90 |
A |
(One Full Cycle Sine Wave, 60 Hz, |
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TJ = 110°C) |
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Circuit Fusing Consideration |
I2t |
33 |
A2sec |
(t = 8.33 ms) |
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Peak Gate Power |
PGM |
16 |
W |
(Pulse Width = 1.0 sec, TC = 70°C) |
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Average Gate Power |
PG(AV) |
0.35 |
W |
(t = 8.3 msec, TC = 70°C) |
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Operating Junction Temperature Range |
TJ |
- 40 to |
°C |
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110 |
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Storage Temperature Range |
Tstg |
- 40 to |
°C |
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150 |
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1.(VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2 |
MT1 |
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G |
MARKING
DIAGRAM
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4 |
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MAC12xx |
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ALYWW |
1 |
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2 |
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3 |
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TO-220AB |
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CASE 221A |
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Style 4 |
xx |
= Specific Device Code |
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A |
= Assembly Location |
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L |
= Wafer Lot |
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Y |
= Year |
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WW |
= Work Week |
PIN ASSIGNMENT
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1 |
Main Terminal 1 |
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2 |
Main Terminal 2 |
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3 |
Gate |
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4 |
Main Terminal 2 |
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ORDERING INFORMATION
Device |
Package |
Shipping |
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MAC12SM |
TO220AB |
50 Units/Rail |
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MAC12SN |
TO220AB |
50 Units/Rail |
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Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2003 |
1 |
Publication Order Number: |
April, 2003 - Rev. 2 |
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MAC12SM/D |
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
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Characteristic |
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Symbol |
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Value |
Unit |
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Thermal Resistance - |
Junction to Case |
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R JC |
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2.2 |
°C/W |
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- |
Junction to Ambient |
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R JA |
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62.5 |
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Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds |
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TL |
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260 |
°C |
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) |
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Characteristic |
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Symbol |
Min |
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Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Peak Repetitive Blocking Current |
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IDRM, |
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mA |
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(VD = Rated VDRM, VRRM; Gate Open) |
TJ = 25°C |
IRRM |
- |
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- |
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0.01 |
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TJ = 110°C |
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- |
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- |
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2.0 |
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ON CHARACTERISTICS |
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Peak On-State Voltage(1) |
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V |
- |
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- |
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1.85 |
V |
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(ITM = ± 17 A) |
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TM |
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Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) |
IGT |
- |
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1.5 |
5.0 |
mA |
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MT2(+), G(+) |
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MT2(+), G(-) |
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- |
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2.5 |
5.0 |
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MT2(-), G(-) |
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- |
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2.7 |
5.0 |
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Holding Current |
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IH |
- |
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2.5 |
10 |
mA |
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(VD = 12 V, Gate Open, Initiating Current = ±200 mA) |
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Latching Current (VD = 12 V, IG = 5 mA) |
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IL |
- |
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3.0 |
15 |
mA |
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MT2(+), G(+) |
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MT2(+), G(-) |
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- |
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5.0 |
20 |
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MT2(-), G(-) |
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- |
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3.0 |
15 |
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Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) |
VGT |
0.45 |
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0.68 |
1.5 |
V |
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MT2(+), G(+) |
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MT2(+), G(-) |
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0.45 |
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0.62 |
1.5 |
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MT2(-), G(-) |
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0.45 |
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0.67 |
1.5 |
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DYNAMIC CHARACTERISTICS |
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Critical Rate of Change of Commutating Current |
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(di/dt)c |
8.0 |
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10 |
- |
A/ms |
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(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ s, Gate Open, |
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TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 ) |
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Critical Rate of Rise of Off-State Voltage |
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dV/dt |
15 |
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40 |
- |
V/ s |
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(VD = 67% VDRM, Exponential Waveform, RGK = 1 K , |
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TJ = 110°C) |
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Repetitive Critical Rate of Rise of On-State Current |
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di/dt |
- |
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- |
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10 |
A/ s |
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IPK = 50 A; PW = 40 sec; diG/dt = 1 A/ sec; Igt = 100 mA; |
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f = 60 Hz |
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2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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http://onsemi.com
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