MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by M1MA141WKT1/D
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC±70 package which is designed for low power surface mount applications.
M1MA141WKT1
M1MA142WKT1
Motorola Preferred Devices
•Fast trr, < 3.0 ns
•Low CD, < 2.0 pF
•Available in 8 mm Tape and Reel
Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
CATHODE 3
1 2 ANODE
Rating |
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Symbol |
Value |
Unit |
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Reverse Voltage |
M1MA141WKT1 |
VR |
40 |
Vdc |
|
M1MA142WKT1 |
|
80 |
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Peak Reverse Voltage |
M1MA141WKT1 |
VRM |
40 |
Vdc |
|
M1MA142WKT1 |
|
80 |
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Forward Current |
Single |
IF |
100 |
mAdc |
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Dual |
|
150 |
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Peak Forward Current |
Single |
IFM |
225 |
mAdc |
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Dual |
|
340 |
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Peak Forward Surge Current |
Single |
IFSM(1) |
500 |
mAdc |
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Dual |
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750 |
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THERMAL CHARACTERISTICS |
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Rating |
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Symbol |
Max |
Unit |
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Power Dissipation |
|
PD |
150 |
mW |
Junction Temperature |
|
TJ |
150 |
°C |
Storage Temperature |
|
Tstg |
± 55 ~ + 150 |
°C |
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SC±70/SOT±323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V±100 mA SURFACE MOUNT
3
1
2
CASE 419±02, STYLE 5
SC±70/SOT±323
Characteristic |
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Symbol |
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Condition |
Min |
Max |
Unit |
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Reverse Voltage Leakage Current |
M1MA141WKT1 |
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IR |
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VR = 35 V |
Ð |
0.1 |
μAdc |
||
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M1MA142WKT1 |
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VR = 75 V |
Ð |
0.1 |
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Forward Voltage |
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VF |
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IF = 100 mA |
Ð |
1.2 |
Vdc |
||
Reverse Breakdown Voltage |
M1MA141WKT1 |
|
VR |
|
IR = 100 μA |
40 |
Ð |
Vdc |
||
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M1MA142WKT1 |
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80 |
Ð |
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Diode Capacitance |
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CD |
VR = 0, f = 1.0 MHz |
Ð |
2.0 |
pF |
|||
Reverse Recovery Time |
|
t |
(2) |
I |
= 10 mA, V |
R |
= 6.0 V, |
Ð |
3.0 |
ns |
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rr |
F |
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RL = 100 Ω, Irr = 0.1 IR |
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1. t = 1 SEC |
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2. trr Test Circuit |
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Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, IncSmall±Signal. 1996 |
Transistors, FETs and Diodes Device Data |
1 |
M1MA141WKT1 M1MA142WKT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT |
INPUT PULSE |
OUTPUT PULSE |
tr |
tp |
trr |
|
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IF |
t |
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t |
|
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RL |
10% |
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Irr = 0.1 IR |
||
A |
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90% |
IF = 10 mA |
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VR |
|
VR = 6 V |
|
tp = 2 μs |
RL = 100 Ω |
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tr = 0.35 ns |
|
100
(mA) |
|
CURRENT |
10 |
|
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FORWARD, |
1.0 |
|
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F |
|
I |
|
|
0.1 |
0.2
DEVICE MARKING Ð EXAMPLE
Marking Symbol
Type No. |
141WK |
142WK |
MTX |
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Symbol |
MT |
MU |
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The ªXº represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
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10 |
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(μA) |
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TA = 150°C |
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TA = 85°C |
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TA = 125 C |
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1.0 |
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° |
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CURRENT |
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TA = ± 40°C |
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TA = 85°C |
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T = 25°C |
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REVERSE |
0.1 |
|
TA = 55°C |
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A |
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, |
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R |
0.01 |
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I |
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0.001 |
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TA = 25°C |
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50 |
|
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
0 |
10 |
20 |
30 |
40 |
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VF, FORWARD VOLTAGE (VOLTS) |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 1. Forward Voltage |
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Figure 2. Reverse Current |
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1.0 |
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(pF) |
0.9 |
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,DIODE CAPACITANCE |
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0.8 |
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0.7 |
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D |
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C |
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0.6 |
2 |
4 |
6 |
8 |
|
0 |
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |