MOTOROLA M1MA141WAT1, M1MA142WAT3, M1MA141WAT3 Datasheet

0 (0)

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by M1MA141WAT1/D

Common Anode Silicon

Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC±70 package which is designed for low power surface mount applications.

M1MA141WAT1

M1MA142WAT1

Motorola Preferred Devices

Fast trr, < 10 ns

Low CD, < 15 pF

Available in 8 mm Tape and Reel

Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel.

MAXIMUM RATINGS (TA = 25°C)

ANODE 3

1 2 CATHODE

Rating

 

Symbol

Value

Unit

 

 

 

 

 

Reverse Voltage

M1MA141WAT1

VR

40

Vdc

 

M1MA142WAT1

 

80

 

 

 

 

 

 

Peak Reverse Voltage

M1MA141WAT1

VRM

40

Vdc

 

M1MA142WAT1

 

80

 

 

 

 

 

 

Forward Current

Single

IF

100

mAdc

 

Dual

 

150

 

 

 

 

 

 

Peak Forward Current

Single

IFM

225

mAdc

 

Dual

 

340

 

 

 

 

 

 

Peak Forward Surge Current

Single

IFSM(1)

500

mAdc

 

Dual

 

750

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

Rating

 

Symbol

Max

Unit

 

 

 

 

 

Power Dissipation

 

PD

150

mW

Junction Temperature

 

TJ

150

°C

Storage Temperature

 

Tstg

± 55 ~ + 150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C)

SC±70/SOT±323 PACKAGE

COMMON ANODE

DUAL SWITCHING DIODE 40/80 V±100 mA SURFACE MOUNT

3

1

2

CASE 419±02, STYLE 4

SC±70/SOT±323

Characteristic

 

Symbol

 

Condition

Min

Max

Unit

 

 

 

 

 

 

 

 

 

Reverse Voltage Leakage Current

M1MA141WAT1

 

IR

 

VR = 35 V

Ð

0.1

μAdc

 

M1MA142WAT1

 

 

 

VR = 75 V

Ð

0.1

 

Forward Voltage

 

 

VF

 

IF = 100 mA

Ð

1.2

Vdc

Reverse Breakdown Voltage

M1MA141WAT1

 

VR

 

IR = 100 μA

40

Ð

Vdc

 

M1MA142WAT1

 

 

 

 

 

 

80

Ð

 

 

 

 

 

 

 

 

 

Diode Capacitance

 

 

CD

VR = 0, f = 1.0 MHz

Ð

15

pF

Reverse Recovery Time

 

t

(2)

I

= 10 mA, V

R

= 6.0 V,

Ð

10

ns

 

 

 

rr

F

 

 

 

 

 

 

 

 

 

RL = 100 Ω, Irr = 0.1 IR

 

 

 

1. t = 1 SEC

 

 

 

 

 

 

 

 

 

 

2. trr Test Circuit

 

 

 

 

 

 

 

 

 

 

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, IncSmall±Signal. 1996

Transistors, FETs and Diodes Device Data

1

MOTOROLA M1MA141WAT1, M1MA142WAT3, M1MA141WAT3 Datasheet

M1MA141WAT1 M1MA142WAT1

RECOVERY TIME EQUIVALENT TEST CIRCUIT

INPUT PULSE

OUTPUT PULSE

tr

tp

trr

 

IF

t

 

t

 

RL

10%

 

 

Irr = 0.1 IR

A

 

 

90%

IF = 10 mA

 

 

VR

 

VR = 6 V

tp = 2 μs

RL = 100 Ω

 

 

tr = 0.35 ns

 

100

(mA)

 

CURRENT

10

 

FORWARD,

1.0

 

F

 

I

 

 

0.1

0.2

DEVICE MARKING Ð EXAMPLE

Marking Symbol

Type No.

141WA

142WA

MNX

 

 

 

 

 

Symbol

MN

MO

 

 

 

 

 

The ªXº represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

(μA)

 

 

TA = 150°C

 

 

 

 

TA = 85°C

 

 

 

 

TA = 125 C

 

 

 

 

 

 

 

1.0

 

°

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

TA = ± 40°C

 

 

TA = 85°C

 

 

 

 

 

T = 25°C

 

REVERSE

0.1

 

TA = 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

,

 

 

 

 

 

 

 

 

 

 

R

0.01

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

0.001

 

TA = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

50

0.4

0.6

0.8

1.0

1.2

0

10

20

30

40

 

VF, FORWARD VOLTAGE (VOLTS)

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

 

Figure 1. Forward Voltage

 

 

 

 

Figure 2. Reverse Current

 

 

 

1.75

 

 

 

 

(pF)

1.5

 

 

 

 

,DIODE CAPACITANCE

 

 

 

 

1.25

 

 

 

 

1.0

 

 

 

 

D

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

0.75

2

4

6

8

 

0

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Diode Capacitance

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Loading...
+ 4 hidden pages