ON Semiconductor EMG2DXV5T1, EMG2DXV5T1G, EMG5DXV5T1, EMG5DXV5T1G, EMG5DXV5T5G Service Manual

EMG2DXV5T1,

EMG5DXV5T1

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT−553 package which is designed for low power surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Moisture Sensitivity Level: 1

•Available in 8 mm, 7 inch Tape and Reel

•Lead−Free Solder Plating

•Pb−Free Packages are Available

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating		Symbol	Value	Unit
Collector-Base Voltage		VCBO	50	Vdc
Collector-Emitter Voltage		VCEO	50	Vdc
Collector Current		IC	100	mAdc
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation	PD	230 (Note 1)	mW
TA = 25°C		338 (Note 2)	°C/W
Derate above 25°C		1.8 (Note 1)
		2.7 (Note 2)
Thermal Resistance −	RqJA	540 (Note 1)	°C/W
Junction-to-Ambient		370 (Note 2)
Thermal Resistance −	RqJL	264 (Note 1)	°C/W
Junction-to-Lead		287 (Note 2)
Junction and Storage	TJ, Tstg	−55 to +150	°C
Temperature Range

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.FR−4 @ Minimum Pad

2.FR−4 @ 1.0 x 1.0 inch Pad

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NPN SILICON

BIAS RESISTOR

TRANSISTORS

(3)	(2)	(1)
R1		R1
R2	R2
DTr2		DTr1
(4)		(5)

5	SOT−553

CASE 463B

1

MARKING

DIAGRAM

5

XX M G

G

1

xx= Device Code xx= UF (EMG5)

UP (EMG2)

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2005	1	Publication Order Number:
October, 2005 − Rev. 0		EMG5DXV5/D

EMG2DXV5T1, EMG5DXV5T1

DEVICE MARKING AND RESISTOR VALUES

Device

Package

Marking

R1 (K)

R2 (K)

EMG2DXV5T1

SOT−553

UP

47

47

EMG5DXV5T1

SOT−553

UF

10

47

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Q1 & Q2)

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

−

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

−

500

nAdc

Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1

IEBO

−

−

0.1

mAdc

EMG5DXV5T1

−

−

0.2

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

−

Vdc

Collector-Emitter Breakdown Voltage (Note 3)

V(BR)CEO

50

−

−

Vdc

(IC = 2.0 mA, IB = 0)

ON CHARACTERISTICS (Q1 & Q2) (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA)

EMG2DXV5T1

hFE

80

140

−

EMG5DXV5T1

80

140

−

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

−

0.25

Vdc

Output Voltage (on)

VOL

−

−

0.2

Vdc

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

EMG2DXV5T1

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

EMG5DXV5T1

−

−

0.2

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

−

Vdc

Input Resistor

EMG2DXV5T1

R1

32.9

47

61.1

kW

EMG5DXV5T1

7.0

10

13

Resistor Ratio

EMG2DXV5T1

R1/R2

0.8

1.0

1.2

EMG5DXV5T1

0.17

0.21

0.25

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

	350
(mW)	300
DISSIPATION	250
	200
	150
, POWER
	100
	50		RqJA = 370°C/W
D
P
	0	0	50	100	150
	−50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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EMG2DXV5T1, EMG5DXV5T1

TYPICAL ELECTRICAL CHARACTERISTICS — EMG2DXV5T1

	(VOLTS	10
			IC/IB = 10
	VOLTAGE
		1
	COLLECTOR
				TA = −25°C	25°C
					75°C
	, MAXIMUM	0.1
	CE(sat)	0.01
		0	20	40	50
	V

IC, COLLECTOR CURRENT (mA)

				Figure 2. VCE(sat) versus IC
	1
						f = 1 MHz
						IE = 0 V
	0.8					TA	= 25	°	C
(pF)
, CAPACITANCE	0.6
	0.4
ob
C	0.2
	0	0	10	20	30	40			50

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

(NORMALIZED)	1000
			VCE = 10 V
			TA = 75°C
			25°C
			−25°C
GAIN
	100
, DC CURRENT
FE
h
	10 1	10	100

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

	100		25°C
		75°C
(mA)	10			TA = −25°C
CURRENT	1
COLLECTOR	0.1
	0.01
,
C
I				VO = 5 V
0.001
	0	2	4	6	8	10
			Vin, INPUT VOLTAGE (VOLTS)

Figure 5. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

100

VO = 0.2 V

TA = −25°C 25°C

10

75°C

1

0.1

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 6. Input Voltage versus Output Current

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