ON Semiconductor DTA144ERLRP, DTA144ERLRM, DTA144ERLRA, DTB113ERLRP, DTB113ERLRM Datasheet

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ON Semiconductor DTA144ERLRP, DTA144ERLRM, DTA144ERLRA, DTB113ERLRP, DTB113ERLRM Datasheet

DTA114E SERIES

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base±emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO±92 package which is designed for through hole applications.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

 

 

 

 

Collector-Base Voltage

VCBO

50

Vdc

Collector-Emitter Voltage

VCEO

50

Vdc

Collector Current

IC

100

mAdc

Total Power Dissipation

PD

 

 

@ TA = 25°C (1.)

 

350

mW

Derate above 25°C

 

2.81

mW/°C

THERMAL CHARACTERISTICS

Characteristic

 

 

Symbol

Value

Unit

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to

 

 

 

RθJA

357

°C/W

Ambient (surface mounted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating and Storage

 

 

TJ, Tstg

±55 to

°C

Temperature Range

 

 

 

 

+150

 

 

 

 

 

 

 

 

 

 

Maximum Temperature for

 

 

 

TL

 

°C

Soldering Purposes,

 

 

 

 

260

Time in Solder Bath

 

 

 

 

10

Sec

 

 

 

 

 

 

 

DEVICE MARKING AND RESISTOR VALUES

 

 

 

 

 

 

 

 

 

Device

Marking

 

R1 (K)

 

R2 (K)

Shipping

 

 

 

 

 

 

 

 

DTA114E

DTA114E

 

10

 

 

10

5000/Box

DTA124E

DTA124E

 

22

 

 

22

 

 

DTA144E

DTA144E

 

47

 

 

47

 

 

DTA114Y

DTA114Y

 

10

 

 

47

 

 

DTA114T

DTA114T

 

10

 

 

 

 

DTA143T

DTA143T

 

4.7

 

 

 

 

DTB113E

DTB113E

 

1.0

 

 

1.0

 

 

DTA123E

DTA123E

 

2.2

 

 

2.2

 

 

DTA143E

DTA143E

 

4.7

 

 

4.7

 

 

DTA143Z

DTA143Z

 

4.7

 

 

47

 

 

 

 

 

 

 

 

 

 

 

1.Device mounted on a FR±4 glass epoxy printed circuit board using the minimum recommended footprint.

http://onsemi.com

PNP SILICON

BIAS RESISTOR

TRANSISTOR

COLLECTOR 3

2 BASE

1 EMITTER

1

2 3

CASE 29

TO±92 (TO±226)

STYLE 1

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2000

1

Publication Order Number:

May, 2000 ± Rev. 0

 

DTA114E/D

DTA114E SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector±Base Cutoff Current (VCB = 50 V, IE = 0)

 

 

ICBO

Ð

Ð

100

nAdc

Collector±Emitter Cutoff Current (VCE = 50 V, IB = 0)

 

 

ICEO

Ð

Ð

500

nAdc

Emitter±Base Cutoff Current

 

DTA114E

 

 

IEBO

Ð

Ð

0.5

mAdc

(VEB = 6.0 V, IC = 0)

 

DTA124E

 

 

 

Ð

Ð

0.2

 

 

 

DTA144E

 

 

 

Ð

Ð

0.1

 

 

 

DTA114Y

 

 

 

Ð

Ð

0.2

 

 

 

DTA114T

 

 

 

Ð

Ð

0.9

 

 

 

DTA143T

 

 

 

Ð

Ð

1.9

 

 

 

DTB113E

 

 

 

Ð

Ð

4.3

 

 

 

DTA123E

 

 

 

Ð

Ð

2.3

 

 

 

DTA143E

 

 

 

Ð

Ð

1.5

 

 

 

DTA143Z

 

 

 

Ð

Ð

0.18

 

 

 

 

 

 

 

 

 

Collector±Base Breakdown Voltage (IC = 10 μA, IE = 0)

 

 

V(BR)CBO

50

Ð

Ð

Vdc

Collector±Emitter Breakdown Voltage (2.) (I

C

= 2.0 mA, I

B

= 0)

V

50

Ð

Ð

Vdc

 

 

 

(BR)CEO

 

 

 

 

ON CHARACTERISTICS (2.)

 

 

 

 

 

 

 

 

 

DC Current Gain

 

DTA114E

 

 

hFE

35

60

Ð

 

(VCE = 10 V, IC = 5.0 mA)

 

DTA124E

 

 

 

60

100

Ð

 

 

 

DTA144E

 

 

 

80

140

Ð

 

 

 

DTA114Y

 

 

 

80

140

Ð

 

 

 

DTA114T

 

 

 

160

250

Ð

 

 

 

DTA143T

 

 

 

160

250

Ð

 

 

 

DTB113E

 

 

 

3.0

5.0

Ð

 

 

 

DTA123E

 

 

 

8.0

15

Ð

 

 

 

DTA143E

 

 

 

15

27

Ð

 

 

 

DTA143Z

 

 

 

80

140

Ð

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Saturation Voltage

 

 

 

 

VCE(sat)

Ð

Ð

0.25

Vdc

(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y

 

 

 

 

 

 

 

DTB113E/DTA143E

 

 

 

 

 

 

 

(IC = 10 mA, IB = 5 mA) DTA123E

 

 

 

 

 

 

 

 

 

(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/

 

 

 

 

 

 

 

DTA143Z/DTA124E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage (on)

 

 

 

 

VOL

 

 

 

Vdc

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

 

DTA114E

 

 

 

Ð

Ð

0.2

 

 

 

DTA124E

 

 

 

Ð

Ð

0.2

 

 

 

DTA114Y

 

 

 

Ð

Ð

0.2

 

 

 

DTA114T

 

 

 

Ð

Ð

0.2

 

 

 

DTA143T

 

 

 

Ð

Ð

0.2

 

 

 

DTB113E

 

 

 

Ð

Ð

0.2

 

 

 

DTA123E

 

 

 

Ð

Ð

0.2

 

 

 

DTA143E

 

 

 

Ð

Ð

0.2

 

 

 

DTA143Z

 

 

 

Ð

Ð

0.2

 

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

 

DTA144E

 

 

 

Ð

Ð

0.2

 

2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

http://onsemi.com

2

DTA114E SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

Output Voltage (off)

 

 

VOH

4.9

Ð

Ð

Vdc

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

DTA114T

 

 

 

 

 

 

 

DTA113T

 

 

 

 

 

 

 

DTA144E

 

 

 

 

 

 

 

DTA114Y

 

 

 

 

 

 

 

DTA143Z

 

 

 

 

 

(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ)

DTB113E

 

 

 

 

 

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)

DTA114T

 

 

 

 

 

 

 

DTA143T

 

 

 

 

 

 

 

DTA123E

 

 

 

 

 

 

 

DTA143E

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Resistor

 

DTA114E

R1

7.0

10

13

kΩ

 

 

DTA124E

 

15.4

22

28.6

 

 

 

DTA144E

 

32.9

47

61.1

 

 

 

DTA114Y

 

7.0

10

13

 

 

 

DTA114T

 

7.0

10

13

 

 

 

DTA143T

 

3.3

4.7

6.1

 

 

 

DTB113E

 

0.7

1.0

1.3

 

 

 

DTA123E

 

1.5

2.2

2.9

 

 

 

DTA143E

 

3.3

4.7

6.1

 

 

 

DTA143Z

 

3.3

4.7

6.1

 

 

 

 

 

 

 

 

Resistor Ratio

DTA114E/DTA124E/DTA144E

R1/R2

0.8

1.0

1.2

 

 

DTA114Y

 

 

0.17

0.21

0.25

 

 

DTA114T/DTA143T

 

 

Ð

Ð

Ð

 

 

DTB113E/DTA123E/DTA143E

 

0.8

1.0

1.2

 

 

DTA143Z

 

 

0.055

0.1

0.185

 

 

 

 

 

 

 

 

 

http://onsemi.com

3

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