ON Semiconductor DTA144EET1, DTA143ZET1, DTA123JET1, DTA123EET1, DTA143TET1 Datasheet

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DTA114EET1 SERIES

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base±emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC±75/SOT±416 package which is designed for low power surface mount applications.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SC±75/SOT±416 package can be soldered using wave or reflow. The modified gull±winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

Available in 8 mm, 7 inch/3000 Unit Tape & Reel

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

 

 

Symbol

Value

Unit

 

 

 

 

 

 

 

 

Collector-Base Voltage

 

 

 

VCBO

50

Vdc

Collector-Emitter Voltage

 

 

 

VCEO

50

Vdc

Collector Current

 

 

 

 

IC

100

mAdc

DEVICE MARKING AND RESISTOR VALUES

 

 

 

 

 

 

 

 

Device

Marking

R1 (K)

 

R2 (K)

Shipping

 

 

 

 

 

 

 

DTA114EET1

6A

10

 

 

10

3000/Tape & Reel

DTA124EET1

6B

22

 

 

22

 

 

DTA144EET1

6C

47

 

 

47

 

 

DTA114YET1

6D

10

 

 

47

 

 

DTA114TET1

6E

10

 

 

 

 

DTA143TET1

6F

4.7

 

 

 

 

DTA123EET1

6H

2.2

 

 

2.2

 

 

DTA143ZET1

6K

4.7

 

 

47

 

 

DTA124XET1

6L

22

 

 

47

 

 

DTA123JET1

6M

2.2

 

 

47

 

 

 

 

 

 

 

 

 

 

http://onsemi.com

PNP SILICON

BIAS RESISTOR

TRANSISTORS

COLLECTOR 3

1 BASE

2 EMITTER

3

2

1

CASE 463

SOT±416/SC±75

STYLE 1

Preferred devices are recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2000

1

Publication Order Number:

May, 2000 ± Rev. 0

 

DTA114EET1/D

DTA114EET1 SERIES

THERMAL CHARACTERISTICS

Characteristic

 

 

 

 

Symbol

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Device Dissipation,

 

 

 

 

PD

 

 

 

 

 

 

FR±4 Board (1.) @ TA = 25°C

 

 

 

 

 

200

 

mW

 

 

Derate above 25°C

 

 

 

 

 

1.6

 

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient (1.)

 

 

 

RθJA

600

 

°C/W

 

 

Total Device Dissipation,

 

 

 

 

PD

 

 

 

 

 

 

FR±4 Board (2.) @ TA = 25°C

 

 

 

 

 

300

 

mW

 

 

Derate above 25°C

 

 

 

 

 

2.4

 

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient (2.)

 

 

 

RθJA

400

 

°C/W

 

 

Junction and Storage Temperature Range

 

 

 

 

TJ, Tstg

±55 to +150

°C

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

 

 

 

 

 

 

Characteristic

 

 

 

 

Symbol

Min

 

Typ

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Base Cutoff Current (VCB = 50 V, IE = 0)

 

 

ICBO

Ð

 

Ð

 

100

nAdc

Collector±Emitter Cutoff Current (VCE = 50 V, IB = 0)

 

 

ICEO

Ð

 

Ð

 

500

nAdc

Emitter±Base Cutoff Current

 

DTA114EET1

IEBO

Ð

 

Ð

 

0.5

mAdc

(VEB = 6.0 V, IC = 0)

 

DTA124EET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA144EET1

 

Ð

 

Ð

 

0.1

 

 

 

DTA114YET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA114TET1

 

Ð

 

Ð

 

0.9

 

 

 

DTA143TET1

 

Ð

 

Ð

 

1.9

 

 

 

DTA123EET1

 

Ð

 

Ð

 

2.3

 

 

 

DTA143ZET1

 

Ð

 

Ð

 

0.18

 

 

 

DTA124XET1

 

Ð

 

Ð

 

0.13

 

 

 

DTA123JET1

 

Ð

 

Ð

 

0.2

 

 

 

 

 

 

 

 

 

 

 

Collector±Base Breakdown Voltage (IC = 10 mA, IE = 0)

 

 

V(BR)CBO

50

 

Ð

 

Ð

Vdc

Collector±Emitter Breakdown Voltage (3.) (I

C

= 2.0 mA, I

B

= 0)

V

50

 

Ð

 

Ð

Vdc

 

 

 

(BR)CEO

 

 

 

 

 

 

ON CHARACTERISTICS (3.)

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

DTA114EET1

hFE

35

 

60

 

Ð

 

(VCE = 10 V, IC = 5.0 mA)

 

DTA124EET1

 

60

 

100

 

Ð

 

 

 

DTA144EET1

 

80

 

140

 

Ð

 

 

 

DTA114YET1

 

80

 

140

 

Ð

 

 

 

DTA114TET1

 

160

 

250

 

Ð

 

 

 

DTA143TET1

 

160

 

250

 

Ð

 

 

 

DTA123EET1

 

8.0

 

15

 

Ð

 

 

 

DTA143ZET1

 

80

 

140

 

Ð

 

 

 

DTA124XET1

 

80

 

130

 

Ð

 

 

 

DTA123JET1

 

80

 

140

 

Ð

 

 

 

 

 

 

 

 

 

Collector±Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

VCE(sat)

Ð

 

Ð

 

0.25

Vdc

(IC = 10 mA, IB = 5 mA) DTA123EET1

 

 

 

 

 

 

 

 

 

 

 

(IC = 10 mA, IB = 1 mA) DTA114TET1/DTA143TET1/

 

 

 

 

 

 

 

 

DTA143ZET1/DTA124XET1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage (on)

 

 

 

 

VOL

 

 

 

 

 

Vdc

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

 

DTA114EET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA124EET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA114YET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA114TET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA143TET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA123EET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA143ZET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA124XET1

 

Ð

 

Ð

 

0.2

 

 

 

DTA123JET1

 

Ð

 

Ð

 

0.2

 

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

 

DTA144EET1

 

Ð

 

Ð

 

0.2

 

1.FR±4 @ Minimum Pad

2.FR±4 @ 1.0 × 1.0 Inch Pad

3.Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

http://onsemi.com

2

DTA114EET1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

VOH

4.9

Ð

Ð

Vdc

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)

DTA114TET1

 

 

 

 

 

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)

DTA143TET1

 

 

 

 

 

 

 

DTA123EET1

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Resistor

 

DTA114EET1

R1

7.0

10

13

kΩ

 

 

DTA124EET1

 

15.4

22

28.6

 

 

 

DTA144EET1

 

32.9

47

61.1

 

 

 

DTA114YET1

 

7.0

10

13

 

 

 

DTA114TET1

 

7.0

10

13

 

 

 

DTA143TET1

 

3.3

4.7

6.1

 

 

 

DTA123EET1

 

1.5

2.2

2.9

 

 

 

DTA143ZET1

 

3.3

4.7

6.1

 

 

 

DTA124XET1

 

15.4

22

28.6

 

 

 

DTA123JET1

 

1.54

2.2

2.86

 

 

 

 

 

 

 

 

Resistor Ratio

DTA114EET1/DTA124EET1/DTA144EET1

R1/R2

0.8

1.0

1.2

 

 

DTA114YET1

 

 

0.17

0.21

0.25

 

 

DTA114TET1/DTA143TET1

 

Ð

Ð

Ð

 

 

DTA123EET1

 

 

0.8

1.0

1.2

 

 

DTA143ZET1

 

 

0.055

0.1

0.185

 

 

DTA124XET1

 

 

0.38

0.47

0.56

 

 

DTA123JET1

 

 

0.038

0.047

0.056

 

 

 

 

 

 

 

 

 

 

250

 

 

 

 

(MILLIWATTS)

200

 

 

 

 

 

 

 

 

 

DISSIPATION

150

 

 

 

 

100

 

 

 

 

, POWER

50

 

RθJA = 600°C/W

 

 

D

 

 

 

 

 

P

 

 

 

 

 

 

0

0

50

100

150

 

± 50

 

 

TA, AMBIENT TEMPERATURE (°C)

 

Figure 1. Derating Curve

RESISTANCE

1.0

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

THERMAL

 

 

 

 

 

 

 

 

 

0.1

0.1

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRANSIENT

 

0.02

 

 

 

 

 

 

 

 

0.01

0.01

 

 

 

 

 

 

 

 

NORMALIZED

 

SINGLE PULSE

 

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

r(t),

0.00001

0.0001

0.001

0.01

0.1

1.0

10

100

1000

 

t, TIME (s)

Figure 2. Normalized Thermal Response

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3

ON Semiconductor DTA144EET1, DTA143ZET1, DTA123JET1, DTA123EET1, DTA143TET1 Datasheet

DTA114EET1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS Ð DTA114EET1

MAXIMUM COLLECTOR VOLTAGE(VOLTS)

1

 

 

 

1000

 

IC/IB = 10

 

 

 

 

TA = ±25°C

 

 

 

0.1

 

 

25°C

100

 

75°C

 

 

 

 

(NORMALIZED), DCCURRENTGAIN

 

 

 

 

 

,

 

 

 

FE

 

CE(sat)

0.01

20

40

h

10

V

0

50

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

VCE = 10 V

 

 

TA = 75°C

 

 

25°C

 

 

±25°C

1

10

100

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 3. VCE(sat) versus IC

 

 

 

 

 

Figure 4. DC Current Gain

 

 

 

 

4

 

 

 

 

 

 

100

 

75°C

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

lE = 0 V

 

CURRENT (mA)

10

 

 

TA = ±25°C

 

 

 

 

 

 

CAPACITANCE(pF)

3

 

 

 

TA = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ob

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

0.01

 

 

 

 

 

 

VO = 5 V

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

10

20

30

40

50

 

0.001

1

2

3

4

5

6

7

8

9

10

 

0

 

0

 

 

VR, REVERSE BIAS VOLTAGE (VOLTS)

 

 

 

 

 

Vin, INPUT VOLTAGE (VOLTS)

 

 

 

Figure 5. Output Capacitance

Figure 6. Output Current versus Input Voltage

 

100

 

 

 

 

 

 

 

VO = 0.2 V

 

 

 

 

(VOLTS)

10

 

 

TA = ±25°C

 

 

 

 

 

 

 

INPUT VOLTAGE

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

75°C

 

 

1

 

 

 

 

 

,

 

 

 

 

 

 

in

 

 

 

 

 

 

V

 

 

 

 

 

 

 

0.1

10

20

30

40

50

 

0

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 7. Input Voltage versus Output Current

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