Motorola D45H8, D45H11, D45H10, D44H11, D44H10 Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by D44H/D

Complementary Silicon Power

Transistors

. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

Low Collector±Emitter Saturation Voltage

VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NPN

D44H Series*

PNP

D45H Series*

*Motorola Preferred Device

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 80 VOLTS

MAXIMUM RATINGS

 

 

D44H or D45H

 

Rating

Symbol

8

10, 11

Unit

Collector±Emitter Voltage

VCEO

60

80

Vdc

Emitter Base Voltage

VEB

 

5.0

Vdc

Collector Current Ð Continuous

IC

 

10

Adc

Ð Peak (1)

 

 

20

 

Total Power Dissipation

PD

 

50

Watts

@ TC = 25_C

 

 

 

@ TA = 25_C

 

 

1.67

 

Operating and Storage Junction

TJ, Tstg

 

± 55 to 150

_C

Temperature Range

 

 

 

 

THERMAL CHARACTERISTICS

CASE 221A±06

TO±220AB

Characteristic

 

 

 

Symbol

 

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

 

RqJC

2.5

 

_C/W

Thermal Resistance, Junction to Ambient

 

 

 

RqJA

75

 

_C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

 

TL

275

 

_C

(1) Pulse Width v 6.0 ms, Duty Cycle v 50%.

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TJ = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

 

Min

 

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

DC Current Gain

D44H10

 

hFE

 

35

 

Ð

 

Ð

(VCE = 1.0 Vdc, IC = 2.0 Adc)

D45H10

 

 

 

 

 

 

 

 

 

D44H8,11

 

 

 

60

 

Ð

 

 

 

D44H8,11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(VCE = 1.0 Vdc, IC = 4.0 Adc)

D44H10

 

 

 

20

 

Ð

 

 

 

D45H10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D44H8,11

 

 

 

40

 

Ð

 

 

 

D45H8,11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

Motorola D45H8, D45H11, D45H10, D44H11, D44H10 Datasheet

D44H Series D45H Series

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICES

Ð

Ð

10

μA

(VCE = Rated VCEO, VBE = 0)

 

 

 

 

 

 

Emitter Cutoff Current

 

IEBO

Ð

Ð

100

μA

(VEB = 5.0 Vdc)

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

 

Vdc

(IC = 8.0 Adc, IB = 0.4 Adc)

D44H/D45H8,11

 

Ð

Ð

1.0

 

(IC = 8.0 Adc, IB = 0.8 Adc)

D44H/D45H10

 

Ð

Ð

1.0

 

Base±Emitter Saturation Voltage

 

VBE(sat)

Ð

Ð

1.5

Vdc

(IC = 8.0 Adc, IB = 0.8 Adc)

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Capacitance

 

Ccb

 

 

 

pF

(VCB = 10 Vdc, ftest = 1.0 MHz)

D44H Series

 

Ð

130

Ð

 

 

D45H Series

 

Ð

230

Ð

 

 

 

 

 

 

 

 

Gain Bandwidth Product

 

fT

 

 

 

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)

D44H Series

 

Ð

50

Ð

 

 

D45H Series

 

Ð

40

Ð

 

 

 

 

 

 

 

 

SWITCHING TIMES

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay and Rise Times

 

td + tr

 

 

 

ns

(IC = 5.0 Adc, IB1 = 0.5 Adc)

D44H Series

 

Ð

300

Ð

 

 

D45H Series

 

Ð

135

Ð

 

 

 

 

 

 

 

 

Storage Time

 

ts

 

 

 

ns

(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)

D44H Series

 

Ð

500

Ð

 

 

D45H Series

 

Ð

500

Ð

 

 

 

 

 

 

 

 

Fall Time

 

tf

 

 

 

ns

(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)

D44H Series

 

Ð

140

Ð

 

 

D45H Series

 

Ð

100

Ð

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

(AMPS)

50

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

1.0 ms

 

 

 

20

 

 

 

 

 

 

100 μs

 

CURRENT

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

10 μs

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

 

 

 

2.0

TC 70° C

 

 

 

dc

 

 

 

 

 

 

 

 

 

 

1.0

μs

1.0

DUTY CYCLE 50%

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

C

0.3

 

 

 

 

D44H/45H8

 

 

 

 

I

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

D44H/45H10,11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Maximum Rated Forward Bias

Safe Operating Area

2

Motorola Bipolar Power Transistor Device Data

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