MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by D44VH/D
Complementary Silicon Power
Transistors
These complementary silicon power transistors are designed for high±speed switching applications, such as switching regulators and high frequency inverters. The devices are also well±suited for drivers for high power switching circuits.
•Fast Switching Ð t f = 90 ns (Max)
•Key Parameters Specified @ 100_C
•Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Complementary Pairs Simplify Circuit Designs
NPN
D44VH
PNP
D45VH
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
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CASE 221A±06 |
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TO±220AB |
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MAXIMUM RATINGS |
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Rating |
Symbol |
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Value |
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Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
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Vdc |
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Collector±Emitter Voltage |
VCEV |
100 |
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Vdc |
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Emitter Base Voltage |
VEB |
7.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
15 |
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Adc |
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Ð Peak (1) |
ICM |
20 |
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Total Power Dissipation @ TC = 25_C |
PD |
83 |
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Watts |
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Derate above 25_C |
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0.67 |
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W/_C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
± 55 to 150 |
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_C |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
RqJC |
1.5 |
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_C/W |
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Thermal Resistance, Junction to Ambient |
RqJA |
62.5 |
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_C/W |
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Maximum Lead Temperature for Soldering |
TL |
275 |
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_C |
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Purposes: 1/8″ from Case for 5 Seconds |
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(1) Pulse Width v 6.0 ms, Duty Cycle v 50%. |
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NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
Motorola, Inc. 1995
D44VH D45VH
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
80 |
Ð |
Ð |
Vdc |
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(IC = 25 mAdc, IB = 0) |
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Collector±Emitter Cutoff Current |
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ICEV |
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μAdc |
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(VCE = Rated VCEV, VBE(off) = 4.0 Vdc) |
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Ð |
Ð |
10 |
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(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100_C) |
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Ð |
Ð |
100 |
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Emitter Base Cutoff Current |
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IEBO |
Ð |
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10 |
μAdc |
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(VEB = 7.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 2.0 Adc, VCE = 1.0 Vdc) |
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35 |
Ð |
Ð |
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(IC = 4.0 Adc, VCE = 1.0 Vdc) |
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20 |
Ð |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 8.0 Adc, IB = 0.4 Adc) |
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D44VH10 |
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Ð |
Ð |
0.4 |
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(IC = 8.0 Adc, IB = 0.8 Adc) |
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D45VH10 |
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Ð |
Ð |
1.0 |
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(IC = 15 Adc, IB = 3.0 Adc, TC = 100_C) |
D44VH10 |
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Ð |
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0.8 |
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D45VH10 |
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Ð |
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1.5 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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Vdc |
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(IC = 8.0 Adc, IB = 0.4 Adc) |
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D44VH10 |
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Ð |
Ð |
1.2 |
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(IC = 8.0 Adc, IB = 0.8 Adc) |
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D45VH10 |
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Ð |
Ð |
1.0 |
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(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100_C) |
D44VH10 |
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Ð |
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1.1 |
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(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100_C) |
D45VH10 |
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Ð |
Ð |
1.5 |
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DYNAMIC CHARACTERISTICS |
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Current Gain Bandwidth Product |
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fT |
Ð |
50 |
Ð |
MHz |
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(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz) |
D44VH10 |
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Ð |
120 |
Ð |
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D45VH10 |
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Ð |
275 |
Ð |
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SWITCHING CHARACTERISTICS |
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Delay Time |
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td |
Ð |
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50 |
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Rise Time |
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(VCC = 20 Vdc, IC = 8.0 Adc, |
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tr |
Ð |
Ð |
250 |
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Storage Time |
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IB1 = IB2 = 0.8 Adc) |
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t |
Ð |
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700 |
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s |
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Fall Time |
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tf |
Ð |
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90 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%. |
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2 |
Motorola Bipolar Power Transistor Device Data |
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