OMNIREL OM60L60HB, OM60L120HB, OM50F60HB, OM45L120HB, OM35F120HB Datasheet

Preliminary Data Sheet

OM60L60HB OM45L120HB OM50F60HB OM35F120HB

HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES

High Current, High Voltage 600V And 1200V,

Up To 75 Amp IGBTs With FRED Diodes,

Half-Bridge Configuration

FEATURES

•Includes Internal FRED Diode

•Rugged Package Design

•Solder Terminals

•Very Low Saturation Voltage

•Fast Switching, Low Drive Current

•Available Screened To MIL-S-19500, TX, TXV And S Levels

•Ceramic Feedthroughs

DESCRIPTION

This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

GENERAL CHARACTERISTICS @ 25°C (Per Switch)

Part	VCE	IC	VCE(sat)	Type	3.1
Number	(V)	(A)
OM60L60HB	600	75	1.8 Volts	Lo Sat.
OM45L120HB	1200	70	3 Volts	Lo Sat.
OM50F60HB	600	75	2.7 Volts	Hi Speed
OM35F120HB	1200	70	4 Volts	Hi Speed

	SCHEMATIC
C1	G1	C2 E1	G2	E2
4 11 R0	3.1 - 55

OM60L60HB OM45L120HB OM50F60HB OM35F120HB

		ELECTRICAL CHARACTERISTICS:		OM60L60HB (TC = 25°C unless otherwise specified)
		Characteristic			Symbol	Min.	Typ.	Max.	Unit
		OFF CHARACTERISTICS
		Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0			V(BR)CES	600	-	-	V
		Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.			ICES	-	-	0.25	mA
		VCE = 0.8 Max. Rat., VGE = 0, TC = 125°C				-	-	1.0	mA
		Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V			IGES	-	-	±100	nA
		ON CHARACTERISTICS
		Gate-Threshold Voltage, VCE = VGE, IC = 250 µA			VGE(th)	2.5	-	5.0	V
		Collector Emitter saturation Voltage, VGE = 15 V, IC = 60 A			VCE(sat)	-	-	1.8	V
		DYNAMIC CHARACTERISTICS
		Forward Transconductance		VCE = 10 V, IC = 60 A	gfs	30	-	-	S
		Input Capacitance		VGE = 0,	Ciss	-	4000	-	pF
		Output Capacitance		VCE = 25 V,	Coss	-	340	-	pF
		Reverse Transfer Capacitance		f = 1.0 mHz	Crss	-	100	-	pF
		SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
		Turn-On Delay Time			td(on)	-	50	-	nS
		Rise Time		VCC = 480 V, IC = 60 A,	tr	-	200	-	nS
		Turn-Off Delay Time		RGS = 2.7 , VGS = 15 V,	td(off)	-	600	-	nS
		Fall Time		L = 100 µH	tf	-	500	-	nS
		SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
		Turn-On Delay Time		VCE(clamp) = 480 V, IC = 60 A	td(on)	-	1000	-	nS
		Fall Time		VGE = 15 V, Rg = 2.7	tf	-	1000	-	nS
		Turn-Off Losses		L = 100 µH, Tj = 125°C	E(OFF)	-	26	-	m Ws
		SOURCE DRAIN DIODE CHARACTERISTICS
		Maximum Forward Voltage		IF = 60 A, Tj = 25°C	Vf	-	-	1.85	V
				IF = 60 A, Tj = 150°C		-	-	1.50
		Maximum Reverse Current		VR = 600 V, Tj = 25°C	Ir	-	-	200	µA
				VR = 480 V, Tj = 125°C
						-	-	14	mA
		Reverse Recovery Time		IF = 1 A, di/dt = 200 A µ/S	trr	-	-	50	nS
				VR = 30 V, Tj = 25°C
		ELECTRICAL CHARACTERISTICS:		OM45L120HB (TC = 25°C unless otherwise specified)
		Characteristic			Symbol	Min.	Typ.	Max.	Unit
		OFF CHARACTERISTICS
		Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0			V(BR)CES	1200	-	-	V
		Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.			ICES	-	-	3.0	mA
		VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C				-	-	1.2	mA
		Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V			IGES	-	-	±100	nA
3.1		ON CHARACTERISTICS
		Gate-Threshold Voltage, VCE = VGE, IC = 4 mA			VGE(th)	4.0	-	8.0	V
		Collector Emitter saturation Voltage, VGE = 15 V, IC = 45 A			VCE(sat)	-	-	3.0	V
		DYNAMIC CHARACTERISTICS
		Forward Transconductance		VCE = 10 V, IC = 45 A	gfs	26	-	-	S
		Input Capacitance		VGE = 0,	Ciss	-	4200	-	pF
		Output Capacitance		VCE = 25 V,	Coss	-	290	-	pF
		Reverse Transfer Capacitance		f = 1.0 mHz	Crss	-	65	-	pF
		SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
		Turn-On Delay Time			td(on)	-	80	-	nS
		Rise Time		VCC = 960 V, IC = 45 A,	tr	-	250	-	nS
		Turn-Off Delay Time		RGS = 2.7 , VGS = 15 V,	td(off)	-	450	-	nS
		Fall Time		L = 100 µH	tf	-	1200	-	nS
		SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
		Turn-On Delay Time		VCE(clamp) = 960 V, IC = 45 A	td(on)	-	450	-	nS
		Fall Time		VGE = 15 V, Rg = 2.7	tf	-	1200	-	nS
		Turn-Off Losses		L = 100 µH, Tj = 125°C	E(OFF)	-	27	-	m Ws
		SOURCE DRAIN DIODE CHARACTERISTICS
		Maximum Forward Voltage		IF = 52 A, Tj = 25°C	Vf	-	-	2.55	V
				IF = 52 A, Tj = 150°C		-	-	2.15
		Maximum Reverse Current		VR = 1200 V, Tj = 25°C	Ir	-	-	2.2	mA
				VR = 960 V, Tj = 125°C
						-	-	14	mA
		Reverse Recovery Time		IF = 1 A, di/dt = 200 A µ/S	trr	-	-	60	nS
				VR = 30 V, Tj = 25°C

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