OMNIREL OM60L60HB, OM60L120HB, OM50F60HB, OM45L120HB, OM35F120HB Datasheet

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OMNIREL OM60L60HB, OM60L120HB, OM50F60HB, OM45L120HB, OM35F120HB Datasheet

Preliminary Data Sheet

OM60L60HB OM45L120HB OM50F60HB OM35F120HB

HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES

High Current, High Voltage 600V And 1200V,

Up To 75 Amp IGBTs With FRED Diodes,

Half-Bridge Configuration

FEATURES

Includes Internal FRED Diode

Rugged Package Design

Solder Terminals

Very Low Saturation Voltage

Fast Switching, Low Drive Current

Available Screened To MIL-S-19500, TX, TXV And S Levels

Ceramic Feedthroughs

DESCRIPTION

This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

GENERAL CHARACTERISTICS @ 25°C (Per Switch)

Part

VCE

IC

VCE(sat)

Type

3.1

Number

(V)

(A)

 

OM60L60HB

600

75

1.8 Volts

Lo Sat.

 

OM45L120HB

1200

70

3 Volts

Lo Sat.

 

OM50F60HB

600

75

2.7 Volts

Hi Speed

 

 

 

 

 

 

 

OM35F120HB

1200

70

4 Volts

Hi Speed

 

 

 

 

 

 

 

 

SCHEMATIC

 

C1

G1

C2 E1

G2

E2

4 11 R0

3.1 - 55

 

 

OM60L60HB OM45L120HB OM50F60HB OM35F120HB

 

 

ELECTRICAL CHARACTERISTICS:

OM60L60HB (TC = 25°C unless otherwise specified)

 

 

 

 

 

Characteristic

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0

V(BR)CES

600

-

-

V

 

 

Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.

ICES

-

-

0.25

mA

 

 

VCE = 0.8 Max. Rat., VGE = 0, TC = 125°C

 

-

-

1.0

mA

 

 

 

 

 

 

 

 

 

 

 

Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V

IGES

-

-

±100

nA

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage, VCE = VGE, IC = 250 µA

VGE(th)

2.5

-

5.0

V

 

 

Collector Emitter saturation Voltage, VGE = 15 V, IC = 60 A

VCE(sat)

-

-

1.8

V

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

VCE = 10 V, IC = 60 A

gfs

30

-

-

S

 

 

Input Capacitance

 

VGE = 0,

Ciss

-

4000

-

pF

 

 

Output Capacitance

 

VCE = 25 V,

Coss

-

340

-

pF

 

 

Reverse Transfer Capacitance

 

f = 1.0 mHz

Crss

-

100

-

pF

 

 

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

td(on)

-

50

-

nS

 

 

Rise Time

 

VCC = 480 V, IC = 60 A,

tr

-

200

-

nS

 

 

Turn-Off Delay Time

 

RGS = 2.7 , VGS = 15 V,

td(off)

-

600

-

nS

 

 

Fall Time

 

L = 100 µH

tf

-

500

-

nS

 

 

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

 

VCE(clamp) = 480 V, IC = 60 A

td(on)

-

1000

-

nS

 

 

Fall Time

 

VGE = 15 V, Rg = 2.7

tf

-

1000

-

nS

 

 

Turn-Off Losses

 

L = 100 µH, Tj = 125°C

E(OFF)

-

26

-

m Ws

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage

 

IF = 60 A, Tj = 25°C

Vf

-

-

1.85

V

 

 

 

 

 

 

 

 

 

IF = 60 A, Tj = 150°C

-

-

1.50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Reverse Current

 

VR = 600 V, Tj = 25°C

Ir

-

-

200

µA

 

 

 

VR = 480 V, Tj = 125°C

 

 

 

 

 

 

-

-

14

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Recovery Time

 

IF = 1 A, di/dt = 200 A µ/S

trr

-

-

50

nS

 

 

 

VR = 30 V, Tj = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS:

OM45L120HB (TC = 25°C unless otherwise specified)

 

 

 

 

 

Characteristic

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0

V(BR)CES

1200

-

-

V

 

 

Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.

ICES

-

-

3.0

mA

 

 

VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C

 

-

-

1.2

mA

 

 

 

 

 

 

 

 

 

 

Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V

IGES

-

-

±100

nA

3.1

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage, VCE = VGE, IC = 4 mA

VGE(th)

4.0

-

8.0

V

 

 

Collector Emitter saturation Voltage, VGE = 15 V, IC = 45 A

VCE(sat)

-

-

3.0

V

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

VCE = 10 V, IC = 45 A

gfs

26

-

-

S

 

 

Input Capacitance

 

VGE = 0,

Ciss

-

4200

-

pF

 

 

Output Capacitance

 

VCE = 25 V,

Coss

-

290

-

pF

 

 

Reverse Transfer Capacitance

 

f = 1.0 mHz

Crss

-

65

-

pF

 

 

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

td(on)

-

80

-

nS

 

 

Rise Time

 

VCC = 960 V, IC = 45 A,

tr

-

250

-

nS

 

 

Turn-Off Delay Time

 

RGS = 2.7 , VGS = 15 V,

td(off)

-

450

-

nS

 

 

Fall Time

 

L = 100 µH

tf

-

1200

-

nS

 

 

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

 

VCE(clamp) = 960 V, IC = 45 A

td(on)

-

450

-

nS

 

 

Fall Time

 

VGE = 15 V, Rg = 2.7

tf

-

1200

-

nS

 

 

Turn-Off Losses

 

L = 100 µH, Tj = 125°C

E(OFF)

-

27

-

m Ws

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage

 

IF = 52 A, Tj = 25°C

Vf

-

-

2.55

V

 

 

 

 

 

 

 

 

 

IF = 52 A, Tj = 150°C

-

-

2.15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Reverse Current

 

VR = 1200 V, Tj = 25°C

Ir

-

-

2.2

mA

 

 

 

VR = 960 V, Tj = 125°C

 

 

 

 

 

 

-

-

14

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Recovery Time

 

IF = 1 A, di/dt = 200 A µ/S

trr

-

-

60

nS

 

 

 

VR = 30 V, Tj = 25°C

 

 

 

 

 

 

 

 

 

 

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