OMNIREL OM120L60SB, OM100F60SB Datasheet

3.1 - 9

3.1

Preliminary Data Sheet

4 11 R0

High Current, High Voltage 600V And 1200V,

Up To 150 Amp IGBTs With FRED Diodes

IGBTS IN HERMETIC ISOLATED POWER

BLOCK PACKAGES

FEATURES

• Includes Internal FRED Diode

• Rugged Package Design

• Solder Terminals

• Very Low Saturation Voltage

• Fast Switching, Low Drive Current

• Available Screened To MIL-S-19500, TX, TXV And S Levels

• Ceramic Feedthroughs

DESCRIPTION

This series of hermetically packaged products feature the latest advanced IGBT

technology combined with a package designed specifically for high efficiency, high

current applications. They are ideally suited for Hi-Rel requirements where small

size, high performance and high reliability are required, and in applications such as

switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

GENERAL CHARACTERISTICS

@ 25°C

SCHEMATIC

Part V

CE

I

C

Number (V) (A)

V

CE(sat)

Type

OM120L60SB 600 150 1.8 Volts Lo Sat.

OM90L120SB 1200 140 3 Volts Lo Sat.

OM100F60SB 600 150 2.7 Volts Hi Speed

OM70F120SB 1200 140 4 Volts Hi Speed

OM90L120SB

OM70F120SB

OM120L60SB

OM100F60SB

C

E

G

3.1 - 10

3.1

OM120L60SB OM90L120SB OM100F60SB OM70F120SB

ELECTRICAL CHARACTERISTICS: OM120L60SB

(T

C

= 25°C unless otherwise specified)

Characteristic Symbol Min. Typ. Max. Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage, I

C

= 500 µA, V

CE

= 0 V V

(BR)CES

600 - - V

Zero Gate Voltage Drain Current , V

GE

= 0, V

CE

= Max. Rat. I

CES

- - 0.5 mA

V

CE

= 0.8 Max. Rat., V

GE

= 0, T

j

= 125°C - - 2.0 mA

Gate Emitter Leakage Current, V

GE

= ±20 V, V

CE

= 0 V I

GES

- - ±200 nA

ON CHARACTERISTICS

Gate-Threshold Voltage, V

CE

= V

GE

, I

C

= 0.5 mA V

GE(th)

2.5 - 5.0 V

Collector Emitter Saturation Voltage, V

GE

= 15 V, I

C

= 120 A V

CE(sat)

- - 1.8 V

DYNAMIC CHARACTERISTICS

Forward Transconductance V

CE

= 10 V, I

C

= 120 A g

fs

50--S

Input Capacitance V

GE

= 0, C

iss

- 8000 - pF

Output Capacitance V

CE

= 25 V, C

oss

- 680 - pF

Reverse Transfer Capacitance f = 1.0 mHz C

rss

- 200 - pF

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

Turn-On Delay Time t

d(on)

-50-nS

Rise Time V

CC

= 480 V, I

C

= 120 A, t

r

- 200 - nS

Turn-Off Delay Time R

GS

= 2.7 , V

GS

= 15 V, t

d(off)

- 600 - nS

Fall Time L = 100 µH t

f

- 500 - nS

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

Turn-Off Delay Time V

CE(clamp)

= 480 V, I

C

= 120A t

d(on)

- 1000 - nS

Fall Time V

GE

= 15 V, R

g

= 2.7 t

f

- 1000 - nS

Turn-Off Losses L = 100 µH, T

j

= 125°C E

(OFF)

- 52 - m Ws

SOURCE DRAIN DIODE CHARACTERISTICS

Maximum Forward Voltage

I

F

= 120 A, T

j

= 25°C

V

f

- - 1.85

V

I

F

= 120 A, T

j

= 125°C - - 1.50

Maximum Reverse Current

V

R

= 600 V, T

C

= 25°C

I

r

- - 500 µA

V

R

= 800 V, T

C

= 125°C - - 28 mA

Reverse Recovery Time

I

F

= 1 A, di/dt = 200 A µ/S

t

rr

--50nS

V

R

= 30 V, T

j

= 25°C

ELECTRICAL CHARACTERISTICS: OM90L120SB

(T

C

= 25°C unless otherwise specified)

Characteristic Symbol Min. Typ. Max. Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage, I

C

= 6 mA, V

CE

= 0 V V

(BR)CES

1200 - - V

Zero Gate Voltage Drain Current , V

GE

= 0, V

CE

= Max. Rat. I

CES

- - 0.6 mA

V

CE

= 0.8 Max. Rat., V

GE

= 0, T

j

= 125°C - - 2.4 mA

Gate Emitter Leakage Current, V

GE

= ±20 V, V

CE

= 0 V I

GES

- - ±200 nA

ON CHARACTERISTICS

Gate-Threshold Voltage, V

CE

= V

GE

, I

C

= 8 mA V

GE(th)

4.0 - 8.0 V

Collector Emitter Saturation Voltage, V

GE

= 15 V, I

C

= 90 A V

CE(sat)

- - 3.0 V

DYNAMIC CHARACTERISTICS

Forward Transconductance V

CE

= 6 V, I

C

= 90 A g

fs

50--S

Input Capacitance V

GE

= 0, C

iss

- 8500 - pF

Output Capacitance V

CE

= 25 V, C

oss

- 400 - pF

Reverse Transfer Capacitance f = 1.0 mHz C

rss

- 2400 - pF

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

Turn-On Delay Time t

d(on)

-80-nS

Rise Time V

CC

= 960 V, I

C

= 90 A, t

r

- 250 - nS

Turn-Off Delay Time R

GS

= 2.7 , V

GS

= 15 V, t

d(off)

- 450 - nS

Fall Time L = 100 µH t

f

- 1200 - nS

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

Turn-Off Delay Time V

CE(clamp)

= 960 V, I

C

= 90 A t

d(on)

- 450 - nS

Fall Time V

GE

= 15 V, R

g

= 2.7 t

f

- 1200 - nS

Turn-Off Losses L = 100 µH, T

j

= 125°C E

(OFF)

- 54 - m Ws

SOURCE DRAIN DIODE CHARACTERISTICS

Maximum Forward Voltage

I

F

= 105 A, T

j

= 25°C

V

f

- - 2.55

V

I

F

= 105 A, T

j

= 125°C - - 2.15

Maximum Reverse Current

V

R

= 1200 V, T

C

= 25°C

I

r

- - 4.4 mA

V

R

= 960 V, T

C

= 125°C - - 28 mA

Reverse Recovery Time

I

F

= 1 A, di/dt = 200 A µ/S

t

rr

--60nS

V

R

= 30 V, T

j

= 25°C