OMNIREL OM6227SS, OM6231SS, OM6230SS, OM6232SS, OM6233SS Datasheet

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OMNIREL OM6227SS, OM6231SS, OM6230SS, OM6232SS, OM6233SS Datasheet

OM6227SS OM6230SS OM6232SS

OM6228SS OM6231SS OM6233SS

DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE

400V, 500V, 1000V, Up To 24 Amp N-Channel,

Dual Size 6 High Energy MOSFETs

FEATURES

Dual Uncommitted MOSFETs

Isolated Hermetic Metal Package

Size 6 Die, High Energy, High Voltage

Fast Switching, Low Drive Current

Ease of Paralleling For Added Power

Low RDS(on)

Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

3.1

PART NUMBER

 

 

 

VDS

RDS(on)

ID (Amp)

*Package

 

OM6227SS

 

 

400

.20

 

 

24

S-6D

 

 

OM6228SS

 

 

500

.27

 

 

22

S-6D

 

 

OM6230SS

 

 

1000

1.30

 

10

S-6D

 

 

OM6231SS

 

 

400

.20

 

 

24

S-6E

 

 

OM6232SS

 

 

500

.27

 

 

22

S-6E

 

 

OM6233SS

 

 

1000

1.30

 

10

S-6E

 

 

* See Mechanical Drawing

 

 

 

 

 

 

 

 

 

 

 

 

 

SCHEMATIC

 

 

 

 

 

DRAIN

 

1

 

DRAIN

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GATE

 

3

 

SOURCE

2

BODY

GATE

BODY

DIODE

4

DIODE

 

 

 

SOURCE

5

4 11 R2

3.1 - 123

Supersedes 2 07 R1

 

 

 

 

 

 

 

 

 

 

 

1.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS: 400V (Per MOSFET)

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS: 500V (Per MOSFET)

 

 

 

 

 

 

 

 

 

(TC = 25° unless otherwise noted)

 

 

 

 

(TC = 25° unless otherwise noted)

 

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min.

 

Typ.

 

Max.

Unit

 

 

 

 

Characteristic

 

 

 

 

Symbol

Min.

Typ.

 

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

 

V(BR)DSS

400

 

-

 

 

-

Vdc

 

 

 

Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

 

V(BR)DSS

500

-

 

-

Vdc

 

 

 

 

Zero Gate Voltage Drain

 

 

 

IDSS

 

 

 

 

 

 

mAdc

 

 

 

Zero Gate Voltage Drain

 

 

 

 

IDSS

 

 

 

 

mAdc

 

 

 

 

(VDS = 400 V, VGS = 0)

 

 

 

 

-

 

-

 

 

0.25

 

 

 

 

(VDS = 500 V, VGS = 0)

 

 

 

 

 

-

-

 

0.25

 

 

 

 

 

(VDS = 320 V, VGS = 0, TJ = 125° C)

 

 

-

 

-

 

 

1.0

 

 

 

 

(VDS = 500 V, VGS = 0, TJ = 125° C)

 

 

-

-

 

1.0

 

 

 

 

 

Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

 

IGSSF

-

 

-

 

 

100

nAdc

 

 

 

Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

 

IGSSF

-

-

 

100

nAdc

 

 

 

 

Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

 

IGSSR

-

 

-

 

 

100

nAdc

 

 

 

Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

 

IGSSR

-

-

 

100

nAdc

 

 

 

ON CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

 

 

 

ON CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage

 

 

 

VGS(th)

 

 

 

 

 

 

Vdc

 

 

 

Gate-Threshold Voltage

 

 

 

 

VGS(th)

 

 

 

 

Vdc

 

 

 

 

(VDS = VGS, ID = 0.25 mAdc

 

 

 

 

2.0

 

3.0

 

 

4.0

 

 

 

 

(VDS = VGS, ID = 0.25 mAdc

 

 

 

 

 

2.0

3.0

 

4.0

 

 

 

 

 

(TJ = 125° C)

 

 

 

 

1.5

 

-

 

 

3.5

 

 

 

 

(TJ = 125° C)

 

 

 

 

 

1.5

-

 

3.5

 

 

 

 

 

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc)

 

rDS(on)

-

 

-

 

 

0.20

Ohm

 

 

 

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc)

 

rDS(on)

-

-

 

0.27

Ohm

 

 

 

 

Drain-Source On-Voltage (VGS = 10 Vdc)

 

VDS(on)

 

 

 

 

 

 

Vdc

 

 

 

Drain-Source On-Voltage (VGS = 10 Vdc)

 

VDS(on)

 

 

 

 

Vdc

 

 

 

 

(ID = 24 A)

 

 

 

 

-

 

-

 

 

5.0

 

 

 

 

(ID = 24 A)

 

 

 

 

 

-

-

 

8.0

 

 

 

 

 

(ID = 12 A, TJ = 125° C)

 

 

 

 

-

 

-

 

 

5.0

 

 

 

 

(ID = 12 A, TJ = 125° C)

 

 

 

 

 

-

-

 

8.0

 

 

 

 

 

Forward Transconductance (VDS = 15 Vdc, ID = 12A Adc)

 

gFS

14

 

-

 

 

-

mhos

 

 

 

Forward Transconductance (VDS = 15 Vdc, ID = 13 Adc)

 

gFS

13

-

 

-

mhos

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

 

(VDS = 25 V, VGS = 0,

 

Ciss

-

 

4000

 

 

-

pF

 

 

 

Input Capacitance

 

(VDS = 25 V, VGS = 0,

 

Ciss

-

4000

 

-

pF

3

 

 

 

Output Capacitance

 

f = 1.0 MHz)

 

Coss

-

 

550

 

 

-

 

 

 

 

Output Capacitance

 

 

f = 1.0 MHz)

 

Coss

-

480

 

-

 

 

 

 

Transfer Capacitance

 

 

 

 

Crss

-

 

110

 

 

-

 

 

 

 

Transfer Capacitance

 

 

 

 

 

Crss

-

95

 

-

 

1.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

124

 

 

 

Turn-On Delay Time

 

 

 

 

td(on)

-

 

35

 

 

-

ns

 

 

 

Turn-On Delay Time

 

 

 

 

 

td(on)

-

32

 

-

ns

 

 

 

Rise Time

 

(VDD = 250 V, ID = 24 A,

 

tr

-

 

95

 

 

-

 

 

 

 

Rise Time

 

(VDD = 250 V, ID = 24 A,

 

tr

-

95

 

-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-Off Delay Time

 

Rgen = 4.3 ohms)

 

td(off)

-

 

80

 

 

-

 

 

 

 

Turn-Off Delay Time

 

Rgen = 4.3 ohms)

 

td(off)

-

75

 

-

 

 

 

 

 

Fall Time

 

 

 

 

tf

-

 

80

 

 

-

 

 

 

 

Fall Time

 

 

 

 

 

tf

-

75

 

-

 

 

 

 

 

Total Gate Charge

 

(VDS = 400 V, ID = 24 A,

 

Qg

-

 

110

 

 

14

0nC

 

 

 

Total Gate Charge

 

(VDS = 400 V, ID = 24 A,

 

Qg

-

115

 

140

nC

 

 

 

 

Gate-Source Charge

 

VGS = 10 V)

 

Qgs

-

 

20

 

 

-

 

 

 

 

Gate-Source Charge

 

 

VGS = 10 V)

 

Qgs

-

20

 

-

 

 

 

 

 

Gate-Drain Charge

 

 

 

 

Qgd

-

 

80

 

 

-

 

 

 

 

Gate-Drain Charge

 

 

 

 

 

Qgd

-

60

 

-

 

 

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward On-Voltage

 

 

 

 

VSD

-

 

1.1

 

 

1.6

Vdc

 

 

 

Forward On-Voltage

 

 

 

 

 

VSD

-

1.1

 

1.6

Vdc

 

 

 

 

Forward Turn-On Time

 

(IS = 24 A, d/dt = 100 A/µs)

 

ton

 

**

 

 

 

ns

 

 

 

Forward Turn-On Time

 

(IS = 24 A, d/dt = 100 A/µs)

 

ton

 

**

 

 

ns

 

 

 

 

Reverse Recovery Time

 

 

 

 

trr

-

 

500

 

 

1000

 

 

 

 

Reverse Recovery Time

 

 

 

 

 

trr

-

500

 

1000

 

 

*

Indicates Pulse Test = 300 µsec, Duty Cycle = 2%

 

 

 

 

 

 

 

 

 

*

Indicates Pulse Test = 300 µsec, Duty Cycle = 2%

 

 

 

 

 

 

 

**

Limited by circuit inductance

 

 

 

 

 

 

 

 

 

**

Limited by circuit inductance

 

 

 

 

 

 

 

 

 

 

 

 

 

UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Value

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Single Pulse Drain-To-Source Avalanche Energy

TJ = 25°C

WDSS (1)

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 100°C

 

160

 

 

mJ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Repetitive Pulse Drain-To-Source Avalanche Energy

 

 

 

WDSS (2)

 

25

 

 

 

 

 

 

 

 

(1)VDD = 50V, ID = 10A

(2)Pulse width and frequency is limited by TJ(max) and thermal response.

OM6233SS - OM6227SS

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