OM6009SA OM6011SA OM6109SA OM6111SA
OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
•Isolated Hermetic Metal Package
•Fast Switching
•Low RDS(on)
•Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
•Bi-Lateral Zener Gate Protection (Optional)
•Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
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PART NUMBER |
VDS |
RDS(ON) |
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ID(MAX) |
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3.1 |
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OM6009SA, OM6109SA |
100V |
.095 |
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22A |
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OM6010SA, OM6110SA |
200V |
.18 |
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18A |
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OM6011SA, OM6111SA |
400V |
.55 |
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10A |
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OM6012SA, OM6112SA |
500V |
.85 |
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8A |
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Note: OM61XX Series include gate protection circuitry. |
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SCHEMATIC |
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POWER RATING |
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4 11 R3 |
3.1 - 79 |
Supersedes 1 07 R2 |
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1.3 |
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ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted |
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted |
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STATIC P/N OM6009SA / OM6109SA |
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STATIC P/N OM6010SA / OM6110SA |
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Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
100 |
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V |
VGS = 0, |
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BVDSS |
Drain-Source Breakdown |
200 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
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IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VGS = 20 V |
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IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VGS = 20 V |
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IGSSR |
Gate-Body Leakage Reverse |
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-100 |
nA |
VGS = - 20 V |
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IGSSR |
Gate-Body Leakage Reverse |
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- 100 |
nA |
VGS = - 20 V |
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IGSS |
Gate-Body Leakage (OM6109) |
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± 500 |
nA |
VGS = ± 12.8 V |
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IGSS |
Gate-Body Leakage (OM6110) |
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± 500 |
nA |
VGS = ± 12.8 V |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
22 |
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A |
VDS 2 VDS(on), VGS = 10 V |
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ID(on) |
On-State Drain Current1 |
18 |
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A |
VDS 2 VDS(on), VGS = 10 V |
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VDS(on) |
Static Drain-Source On-State |
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1.275 |
1.425 |
V |
VGS = 10 V, ID = 15 A |
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VDS(on) |
Static Drain-Source On-State |
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1.4 |
1.8 |
V |
VGS = 10 V, ID = 10 A |
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Voltage1 |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.085 |
.095 |
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VGS = 10 V, ID = 15 A |
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RDS(on) |
Static Drain-Source On-State |
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0.14 |
0.18 |
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VGS = 10 V, ID = 10 A |
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Resistance1 |
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Resistance1 |
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.3 |
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RDS(on) |
Static Drain-Source On-State |
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.130 |
.155 |
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VGS = 10 V, ID = 15 A, |
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RDS(on) |
Static Drain-Source On-State |
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0.28 |
0.36 |
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VGS = 10 V, ID = 10 A, |
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Resistance1 |
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TC = 125 C |
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Resistance1 |
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TC = 125 C |
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- 1 |
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DYNAMIC |
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DYNAMIC |
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80 |
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gfs |
Forward Transductance1 |
10.0 |
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S()WW)( |
VDS 2 VDS(on), ID = 15 A |
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gfs |
Forward Transductance1 |
6.0 |
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S(W) W)( |
VDS 2 VDS(on), ID = 10 A |
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Ciss |
Input Capacitance |
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1275 |
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pF |
VGS = 0 |
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Ciss |
Input Capacitance |
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1000 |
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pF |
VGS = 0 |
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Coss |
Output Capacitance |
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550 |
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pF |
VDS = 25 V |
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Coss |
Output Capacitance |
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250 |
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pF |
VDS = 25 V |
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Crss |
Reverse Transfer Capacitance |
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160 |
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pF |
f = 1 MHz |
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Crss |
Reverse Transfer Capacitance |
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100 |
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pF |
f = 1 MHz |
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Td(on) |
Turn-On Delay Time |
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16 |
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VDD = 30 V, ID = 5 A |
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Td(on) |
Turn-On Delay Time |
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17 |
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VDD = 75 V, ID @ 18 A |
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tr |
Rise Time |
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19 |
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ns |
Rg = 5 W , VGS = 10 V |
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tr |
Rise Time |
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52 |
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Rg = 5 W , VGS = 10 V |
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(MOSFET) switching times are |
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(MOSFET) switching times are |
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Td(off) |
Turn-Off Delay Time |
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42 |
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Td(off) |
Turn-Off Delay Time |
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36 |
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ns |
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essentially independent of |
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essentially independent of |
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tf |
Fall Time |
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24 |
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operating temperature. |
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tf |
Fall Time |
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30 |
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operating temperature. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS |
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS |
IS |
Continuous Source Current |
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- 27 |
A |
Modified MOSPOWER |
D |
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IS |
Continuous Source Current |
- 18 |
A |
Modified MOSPOWER |
D |
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(Body Diode) |
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symbol showing |
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(Body Diode) |
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symbol showing |
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ISM |
Source Current1 |
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- 108 |
A |
the integral P-N |
G |
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ISM |
Source Current1 |
- 72 |
A |
the integral P-N |
G |
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(Body Diode) |
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Junction rectifier. |
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S |
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(Body Diode) |
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Junction rectifier. |
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S |
VSD |
Diode Forward Voltage1 |
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- 2.5 |
V |
TC = 25 C, IS = -24 A, VGS = 0 |
VSD |
Diode Forward Voltage1 |
- 2 |
V |
TC = 25 C, IS = -18 A, VGS = 0 |
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trr |
Reverse Recovery Time |
200 |
ns |
TJ = 150 C,IF = IS, |
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trr |
Reverse Recovery Time |
350 |
ns |
TJ = 150 C,IF = IS, |
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dlF/ds = 100 A/ms |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width 300msec, Duty Cycle |
2%. |
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1 Pulse Test: Pulse Width |
300msec, Duty Cycle 2%. |
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OM6112SA - OM6009SA