OMNIREL OM6109SA, OM6111SA, OM6011SA, OM6010SA, OM6009SA Datasheet

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OM6009SA OM6011SA OM6109SA OM6111SA

OM6010SA OM6012SA OM6110SA OM6112SA

POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE

100V Thru 500V, Up To 22 Amp, N-Channel

MOSFET In Hermetic Metal Package, With

Optional Zener Gate Clamp Protection

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels

Bi-Lateral Zener Gate Protection (Optional)

Ceramic Feedthroughs Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series.

MAXIMUM RATINGS

 

 

PART NUMBER

VDS

RDS(ON)

 

 

ID(MAX)

 

 

3.1

OM6009SA, OM6109SA

100V

.095

 

 

 

 

 

22A

 

OM6010SA, OM6110SA

200V

.18

 

 

 

 

 

 

18A

 

 

 

OM6011SA, OM6111SA

400V

.55

 

 

 

 

 

 

10A

 

 

OM6012SA, OM6112SA

500V

.85

 

 

 

 

 

 

8A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note: OM61XX Series include gate protection circuitry.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCHEMATIC

 

POWER RATING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4 11 R3

3.1 - 79

Supersedes 1 07 R2

OMNIREL OM6109SA, OM6111SA, OM6011SA, OM6010SA, OM6009SA Datasheet

 

 

 

 

 

 

 

 

 

 

1.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

 

 

 

STATIC P/N OM6009SA / OM6109SA

 

 

 

 

 

 

STATIC P/N OM6010SA / OM6110SA

 

 

 

 

 

 

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

100

 

 

V

VGS = 0,

 

BVDSS

Drain-Source Breakdown

200

 

 

V

VGS = 0,

 

 

 

 

 

 

 

Voltage

 

 

 

 

ID = 250 mA

 

 

Voltage

 

 

 

 

ID = 250 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

 

 

 

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = 20 V

 

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = 20 V

 

 

 

IGSSR

Gate-Body Leakage Reverse

 

 

-100

nA

VGS = - 20 V

 

IGSSR

Gate-Body Leakage Reverse

 

 

- 100

nA

VGS = - 20 V

 

 

 

IGSS

Gate-Body Leakage (OM6109)

 

 

± 500

nA

VGS = ± 12.8 V

 

IGSS

Gate-Body Leakage (OM6110)

 

 

± 500

nA

VGS = ± 12.8 V

 

 

 

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

 

 

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

 

 

 

 

 

 

 

TC = 125° C

 

 

 

 

 

 

 

TC = 125° C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ID(on)

On-State Drain Current1

22

 

 

A

VDS 2 VDS(on), VGS = 10 V

 

ID(on)

On-State Drain Current1

18

 

 

A

VDS 2 VDS(on), VGS = 10 V

 

 

 

VDS(on)

Static Drain-Source On-State

 

1.275

1.425

V

VGS = 10 V, ID = 15 A

 

VDS(on)

Static Drain-Source On-State

 

1.4

1.8

V

VGS = 10 V, ID = 10 A

 

 

 

 

Voltage1

 

 

 

 

 

 

 

 

 

Voltage1

 

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.085

.095

 

VGS = 10 V, ID = 15 A

 

RDS(on)

Static Drain-Source On-State

 

0.14

0.18

 

VGS = 10 V, ID = 10 A

 

 

 

 

Resistance1

 

 

 

 

 

 

 

 

 

Resistance1

 

 

 

 

 

.3

 

 

RDS(on)

Static Drain-Source On-State

 

.130

.155

 

VGS = 10 V, ID = 15 A,

 

RDS(on)

Static Drain-Source On-State

 

0.28

0.36

 

VGS = 10 V, ID = 10 A,

 

 

 

Resistance1

 

 

 

 

TC = 125 C

 

 

Resistance1

 

 

 

 

TC = 125 C

- 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DYNAMIC

 

 

 

 

 

 

 

 

DYNAMIC

 

 

 

 

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

gfs

Forward Transductance1

10.0

 

 

S()WW)(

VDS 2 VDS(on), ID = 15 A

 

gfs

Forward Transductance1

6.0

 

 

S(W) W)(

VDS 2 VDS(on), ID = 10 A

 

 

 

Ciss

Input Capacitance

 

1275

 

pF

VGS = 0

 

Ciss

Input Capacitance

 

1000

 

pF

VGS = 0

 

 

 

Coss

Output Capacitance

 

550

 

pF

VDS = 25 V

 

Coss

Output Capacitance

 

250

 

pF

VDS = 25 V

 

 

 

Crss

Reverse Transfer Capacitance

 

160

 

pF

f = 1 MHz

 

Crss

Reverse Transfer Capacitance

 

100

 

pF

f = 1 MHz

 

 

 

Td(on)

Turn-On Delay Time

 

16

 

ns

VDD = 30 V, ID = 5 A

 

Td(on)

Turn-On Delay Time

 

17

 

ns

VDD = 75 V, ID @ 18 A

 

 

 

tr

Rise Time

 

19

 

ns

Rg = 5 W , VGS = 10 V

 

tr

Rise Time

 

52

 

ns

Rg = 5 W , VGS = 10 V

 

 

 

 

 

 

 

 

 

(MOSFET) switching times are

 

 

 

 

 

 

 

(MOSFET) switching times are

 

 

 

Td(off)

Turn-Off Delay Time

 

42

 

ns

Td(off)

Turn-Off Delay Time

 

36

 

ns

 

 

 

 

 

 

 

 

 

essentially independent of

 

 

 

 

 

 

 

essentially independent of

 

 

 

tf

Fall Time

 

24

 

ns

operating temperature.

 

tf

Fall Time

 

30

 

ns

operating temperature.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

- 27

A

Modified MOSPOWER

D

 

IS

Continuous Source Current

- 18

A

Modified MOSPOWER

D

 

 

 

 

 

(Body Diode)

 

 

 

symbol showing

 

 

 

 

(Body Diode)

 

 

symbol showing

 

 

ISM

Source Current1

 

- 108

A

the integral P-N

G

 

 

ISM

Source Current1

- 72

A

the integral P-N

G

 

 

 

 

 

 

 

 

(Body Diode)

 

 

 

Junction rectifier.

 

S

 

 

(Body Diode)

 

 

Junction rectifier.

 

S

VSD

Diode Forward Voltage1

 

- 2.5

V

TC = 25 C, IS = -24 A, VGS = 0

VSD

Diode Forward Voltage1

- 2

V

TC = 25 C, IS = -18 A, VGS = 0

trr

Reverse Recovery Time

200

ns

TJ = 150 C,IF = IS,

 

 

trr

Reverse Recovery Time

350

ns

TJ = 150 C,IF = IS,

 

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

 

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle 2%.

 

 

 

 

 

OM6112SA - OM6009SA

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