OM6108SC
OMNIREL OM6108SC, OM6106SC, OM6008SC, OM6107SC, OM6105SC Datasheet
...
3.1 - 75
3.1
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
4 11 R5
Supersedes 1 07 R4
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
FEATURES
• Isolated Hermetic Metal Package
• Bi-Lateral Zener Gate Protection (Optional)
• Fast Switching, Low Drive Current
• Ease Of Paralleling For Added Power
• Low R
DS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
OM6107SC
OM6108SC
OM6105SC
OM6106SC
OM6007SC
OM6008SC
OM6005SC
OM6006SC
PART NUMBER V
DS
R
DS(on)
I
D
OM6005SC/OM6105SC 100 V .065 35 A
OM6006SC/OM6106SC 200 V .095 30 A
OM6007SC/OM6107SC 400 V 0.3 15 A
OM6008SC/OM6108SC 500 V 0.4 13 A
Note: OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS WITH ZENER CLAMPS
OM6005SC - 6008SC OM6105SC - 6108SC
2 - SOURCE
3 - GATE
ZENERS
1 - DRAIN
3 - GATE
1 - DRAIN
2 - SOURCE
3.1 - 76
OM6005SC - OM6108SC
3.1
ELECTRICAL CHARACTERISTICS: (T
C
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (T
C
= 25°C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V) STATIC P/N OM6106SC/OM6006SC (200V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100 V
V
GS
= 0, BV
DSS
Drain-Source Breakdown
200 V
V
GS
= 0,
Voltage I
D
= 250 mA Voltage I
D
= 250 mA
V
GS(th)
Gate-Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250 mAV
GS(th)
Gate-Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250 mA
I
GSS
Gate-Body Leakage (OM6105) ± 500 nA V
GS
= ± 12.8 V I
GSS
Gate-Body Leakage (OM6106) ± 500 nA V
GS
= ± 12.8 V
I
GSS
Gate-Body Leakage (OM6005) ± 100 nA V
GS
= ± 20 V I
GSS
Gate-Body Leakage (OM6006) ± 100 nA V
GS
= ± 20 V
I
DSS
Zero Gate Voltage Drain 0.1 0.25 mA V
DS
= Max. Rat., V
GS
= 0 I
DSS
Zero Gate Voltage Drain 0.1 0.25 mA V
DS
= Max. Rat., V
GS
= 0
Current
0.2 1.0 mA
V
DS
= 0.8 Max. Rat., V
GS
= 0, Current
0.2 1.0 mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C T
C
= 125° C
I
D(on)
On-State Drain Current
1
35 A V
DS
2 V
DS(on)
, V
GS
= 10 V I
D(on)
On-State Drain Current
1
30 A V
DS
2 V
DS(on)
, V
GS
= 10 V
V
DS(on)
Static Drain-Source On-State
1.1 1.3 V V
GS
= 10 V, I
D
= 20 A
V
DS(on)
Static Drain-Source On-State
1.36 1.52 V V
GS
= 10 V, I
D
= 16 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.55 0.65 V
GS
= 10 V, I
D
= 20 A
R
DS(on)
Static Drain-Source On-State
.085 .095 V
GS
= 10 V, I
D
= 16 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
.09 0.11
V
GS
= 10 V, I
D
= 20 A, R
DS(on)
Static Drain-Source On-State
0.14 0.17
V
GS
= 10 V, I
D
= 16 A,
Resistance
1
T
C
= 125 C Resistance
1
T
C
= 125 C
DYNAMIC DYNAMIC
g
fs
Forward Transductance
1
9.0 10 S(W ) V
DS
2 V
DS(on)
, I
D
= 20 A g
fs
Forward Transductance
1
10.0 12.5 S(W) V
DS
2 V
DS(on)
, I
D
= 16 A
C
iss
Input Capacitance 2700 pF V
GS
= 0 C
iss
Input Capacitance 2400 pF V
GS
= 0
C
oss
Output Capacitance 1300 pF V
DS
= 25 V C
oss
Output Capacitance 600 pF V
DS
= 25 V
C
rss
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
Reverse Transfer Capacitance 250 pF f = 1 MHz
t
d(on)
Turn-On Delay Time 28 ns V
DD
= 30 V, I
D
@ 20 A t
d(on)
Turn-On Delay Time 25 ns V
DD
= 75 V, I
D
@ 16 A
t
r
Rise Time 45 ns R
g
= 5.0 W, V
G
= 10V t
r
Rise Time 60 ns R
g
= 5.0 W,V
GS
= 10V
t
d(off)
Turn-Off Delay Time 100 ns t
d(off)
Turn-Off Delay Time 85 ns
t
f
Fall Time 50 ns t
f
Fall Time 38 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 40 A
Modified MOSPOWER I
S
Continuous Source Current
- 30 A
Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
- 160 A
the integral P-N I
SM
Source Current
1
- 120 A
the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
V
SD
Diode Forward Voltage
1
- 2.5 V T
C
= 25 C, I
S
= -40 A, V
GS
= 0 V
SD
Diode Forward Voltage
1
- 2 V T
C
= 25 C, I
S
= -30 A, V
GS
= 0
t
rr
Reverse Recovery Time 400 ns
T
J
= 150 C, I
F
= I
S
,
t
rr
Reverse Recovery Time 350 ns
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms dl
F
/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
G
D
S
G
D
S
(W )
(W )
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