OMNIREL OM6103ST, OM6102ST, OM6101ST, OM6004ST, OM6003ST Datasheet

OM6001ST OM6003ST OM6101ST OM6103ST

OM6002ST OM6004ST OM6102ST OM6104ST

POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE

100V Thru 500V, Up To 14 Amp, N-Channel

MOSFET With Or Without Zener Gate

Clamp Protection

FEATURES

•Isolated Hermetic Metal Package

•Bi-Lateral Zener Gate Protection (Optional)

•Fast Switching, Low Drive Current

•Ease Of Paralleling For Added Power

•Low RDS(on)

•Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener clamps in the OM6101ST series.

MAXIMUM RATINGS

	PART NUMBER		VDS	RDS(on)	ID
								3.1
	OM6001ST/OM6101ST		100 V	.20	14 A
	OM6002ST/OM6102ST		200 V	.44	9 A
	OM6003ST/OM6103ST		400 V	1.05	5.5 A
	OM6004ST/OM6104ST		500 V	1.60	4.5 A
	Note: OM6101ST thru OM6104ST is supplied with zener gate protection.
	OM6001ST thru OM6004ST is supplied without zener gate protection.
		SCHEMATIC
	WITHOUT ZENER CLAMPS			WITH ZENER CLAMPS
	OM6001ST - 6004ST			OM6101ST - 6104ST

1 - DRAIN

1 - DRAIN

3 - GATE

3 - GATE

ZENERS

2 - SOURCE

2 - SOURCE

4 11 R4	3.1 - 71
Supersedes 1 07 R3

72 - 1.3

1.3

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6101ST / OM6001ST (100V)

Parameter		Min.	Typ.	Max.	Units	Test Conditions
BVDSS	Drain-Source Breakdown	100			V	VGS = 0,
	Voltage					ID = 250 mA
VGS(th)	Gate-Threshold Voltage	2.0		4.0	V	VDS = VGS, ID = 250 mA
IGSS	Gate-Body Leakage (OM6101)			± 500	nA	VGS = ± 12.8 V
IGSS	Gate-Body Leakage (OM6001)			± 100	nA	VGS = ± 20 V
IDSS	Zero Gate Voltage Drain		0.1	0.25	mA	VDS = Max. Rat., VGS = 0
	Current		0.2	1.0	mA	VDS = 0.8 Max. Rat., VGS = 0,
						TC = 125° C
ID(on)	On-State Drain Current1	14			A	VDS 2 VDS(on), VGS = 10 V
VDS(on)	Static Drain-Source On-State		1.2	1.60	V	VGS = 10 V, ID = 8 A
	Voltage1
RDS(on)	Static Drain-Source On-State			0.20		VGS = 10 V, ID = 8 A
	Resistance1
RDS(on)	Static Drain-Source On-State			0.40		VGS = 10 V, ID = 8 A,
	Resistance1					TC = 125 C

DYNAMIC

gfs	Forward Transductance1	4.0			S()WW)(	VDS 2 VDS(on), ID = 8 A
Ciss	Input Capacitance		750		pF	VGS = 0
Coss	Output Capacitance		250		pF	VDS = 25 V
Crss	Reverse Transfer Capacitance		100		pF	f = 1 MHz
td(on)	Turn-On Delay Time		15		ns	VDD = 30 V, ID @ 8 A
tr	Rise Time		35		ns	Rg = 7.5 W , VDS = 10 V
td(off)	Turn-Off Delay Time		38		ns
tf	Fall Time		23		ns

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6102ST / OM6002 ST (200V)

Parameter		Min.	Typ.	Max.	Units	Test Conditions
BVDSS	Drain-Source Breakdown	200			V	VGS = 0,
	Voltage					ID = 250 mA
VGS(th)	Gate-Threshold Voltage	2.0		4.0	V	VDS = VGS, ID = 250 mA
IGSS	Gate-Body Leakage (OM6102)			± 500	nA	VGS = ± 12.8 V
IGSS	Gate-Body Leakage (OM6002)			± 100	nA	VGS = ± 20 V
IDSS	Zero Gate Voltage Drain		0.1	0.25	mA	VDS = Max. Rat., VGS = 0
	Current		0.2	1.0	mA	VDS = 0.8 Max. Rat., VGS = 0,
						TC = 125° C
ID(on)	On-State Drain Current1	9.0			A	VDS 2 VDS(on), VGS = 10 V
VDS(on)	Static Drain-Source On-State		1.25	2.2	V	VGS = 10 V, ID = 5.0 A
	Voltage1
RDS(on)	Static Drain-Source On-State			0.44		VGS = 10 V, ID = 5.0 A
	Resistance1
RDS(on)	Static Drain-Source On-State			0.88		VGS = 10 V, ID = 5.0 A,
	Resistance1					TC = 125 C

DYNAMIC

gfs	Forward Transductance1	3.0	5.8		S()WW)(	VDS 2 VDS(on), ID = 5.0 A
Ciss	Input Capacitance		780		pF	VGS = 0
Coss	Output Capacitance		150		pF	VDS = 25 V
Crss	Reverse Transfer Capacitance		55		pF	f = 1 MHz
td(on)	Turn-On Delay Time		9		ns	VDD = 75V, ID @ 5.0 A
tr	Rise Time		18		ns	Rg = 7.5 W , VGS =10 V
td(off)	Turn-Off Delay Time		45		ns
tf	Fall Time		27		ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS	Continuous Source Current	- 14	A	Modified MOSPOWER	D	IS	Continuous Source Current	- 9	A	Modified MOSPOWER	D
	(Body Diode)			symbol showing			(Body Diode)			symbol showing
ISM	Source Current1			G		ISM	Source Current1			G
		- 56	A	the integral P-N				- 36	A	the integral P-N
	(Body Diode)			Junction rectifier.	S		(Body Diode)			Junction rectifier.	S
VSD	Diode Forward Voltage1	- 2.5	V	TC = 25 C, IS = -14 A, VGS = 0		VSD	Diode Forward Voltage1	- 2	V	TC = 25 C, IS = -9 A, VGS = 0
VSD				TC = 25 C, IS = -12 A, VGS = 0		VSD				TC = 25 C, IS = -8 A, VGS = 0
	Diode Forward Voltage1	- 2.5	V				Diode Forward Voltage1	- 2	V
trr	Reverse Recovery Time		ns	TJ = 150 C, IF = IS,		trr	Reverse Recovery Time	250	ns	TJ = 150 C, IF = IS,
	100			dlF/ds = 100 A/ms						dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle		2%.		1 Pulse Test: Pulse Width		300msec, Duty Cycle 2%.

OM6104ST - OM6001ST