OMNI OM6N100SA, OM3N100ST, OM1N100ST, OM5N100SA, OM3N100SA, OM1N100SA Datasheet

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OMNI OM6N100SA, OM3N100ST, OM1N100ST, OM5N100SA, OM3N100SA, OM1N100SA Datasheet

OM1N100SA OM5N100SA OM1N100ST

OM3N100SA OM6N100SA OM3N100ST

POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE

1000V, Up To 6 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

Available Screened To MIL-19500, TX, TXV And S

Ceramic Feedthroughs Also Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS

PART NUMBER

RDS(on)

 

ID

 

 

OM1N100SA

8.0

 

1.0A

 

 

OM3N100SA

5.2

 

3.5A

 

 

3.1

OM5N100SA

3.0

 

5.0A

 

OM6N100SA

2.0

 

6.0A

 

 

OM3N100ST

5.4

 

3.5A

 

 

OM1N100ST

8.2

 

1.0A

 

 

 

 

 

 

 

 

 

 

 

SCHEMATIC

 

PIN CONNECTION

 

 

 

DRAIN

TO-254AA

 

 

TO-257AA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GATE

 

 

 

Pin 1: Drain

 

 

 

 

 

 

Pin 2: Source

 

 

 

1

2

3

Pin 3: Gate

1

2

3

SOURCE

 

 

 

 

 

 

4 11 R1

3.1 - 15

Supersedes 2 05 R0

16 - 1.3

1.3

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM1N100SA (See Note 3)

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

1000

 

 

V

VGS = 0,

 

Voltage

 

 

 

 

ID = 250 mA

 

 

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = 20 V, VDS = 0

IGSSR

Gate-Body Leakage Reverse

 

 

-100

nA

VGS = - 20 V, VDS = 0

IDSS

Zero Gate Voltage

 

 

0.25

mA

VDS = Max. Rat., VGS = 0

 

Drain Current

 

 

1.0

mA

VDS = 0.8 x Max. Rat.,

 

 

 

 

 

 

VGS = 0, TC = 125° C

 

 

 

 

 

 

 

ID(on)

On-State Drain Current

1.0

 

 

A

VDS > ID(on) x RDS(on) Max.

 

 

 

 

 

 

VGS = 10 V

RDS(on)

Static Drain-Source On-State

 

SA

8.0

 

VGS = 10 V

 

Resisitance1, 3

 

ST

8.2

 

ID =.5A

RDS(on)

Static Drain-Source On-State

 

SA

15.0

 

VGS = 10 V

 

Resistance1, 3

 

ST

15.4

 

ID =.5A, TC = 100° C

DYNAMIC

gfs

Forward Transductance

1.0

 

 

S

VDS = 10V, ID = 1 A

Ciss

Input Capacitance

 

950

 

pF

VGS = 0

Coss

Output Capacitance

 

110

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

40

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

90

 

ns

 

tr

Rise Time

 

90

 

ns

 

Td(off)

Turn-Off Delay Time

 

115

 

ns

VDD = 600 V, ID = 3.5

tf

Fall Time

 

75

 

ns

RG = 50W, VGS = 10 V

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM3N100SA (See Note 3)

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

1000

 

 

V

VGS = 0,

 

Voltage

 

 

 

 

ID = 250 mA

 

 

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = 20 V

IGSSR

Gate-Body Leakage Reverse

 

 

- 100

nA

VGS = - 20 V

IDSS

Zero Gate Voltage Drain

 

 

0.25

mA

VDS = Max. Rat., VGS = 0

 

Current

 

 

1.0

mA

VDS = 0.8 x Max. Rat.,

 

 

 

 

 

 

VGS = 0, TC = 125° C

 

 

 

 

 

 

 

ID(on)

On-State Drain Current

3.5

 

 

A

VDS > ID(on) x RDS(on) Max

 

 

 

 

 

 

VGS = 10 V

RDS(on)

Static Drain-Source On-State

 

SA

5.2

 

VGS = 10 V

 

Resistance1, 3

 

ST

5.4

 

ID =.5A

RDS(on)

Static Drain-Source On-State

 

SA

10.0

 

VGS = 10 V

 

Resistance 1, 3

 

ST

10.4

 

ID =.5A, TC = 100° C

DYNAMIC

gfs

Forward Transductance

1.0

 

 

S

VDS = 10, ID = 1.5 A

Ciss

Input Capacitance

 

950

 

pF

VGS = 0

Coss

Output Capacitance

 

110

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

40

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

90

 

ns

 

tr

Rise Time

 

90

 

ns

 

Td(off)

Turn-Off Delay Time

 

115

 

ns

VDD = 600 V, ID = 3.5

tf

Fall Time

 

75

 

ns

RG = 50W, VGS = 10 V

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

3.5

A

Modified MOSPOWER

D

 

 

(Body Diode)

 

 

symbol showing

 

 

ISM

Source Current1

14

A

the integral P-N

G

 

 

 

 

(Body Diode)

 

 

Junction rectifier.

 

S

VSD

Diode Forward Voltage2

2.5

V

TC = 25 C, IS = 3.5 A, VGS = 0

trr

Reverse Recovery Time

900

ns

IF = IS, VDD = 100 V

 

 

 

 

 

dlF/ds = 100 A/ms, TJ = 150 C

1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area.

3 OM1N100ST - All characteristics the same except RDS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

 

3.5

A

Modified MOSPOWER

 

 

 

 

D

 

(Body Diode)

 

 

 

 

symbol showing

 

 

 

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

ISM

Source Current1

 

 

14

A

the integral P-N

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(Body Diode)

 

 

 

 

Junction rectifier.

 

 

 

 

 

 

S

 

 

 

 

 

 

 

 

 

 

 

VSD

Diode Forward Voltage2

 

 

2.5

V

TC = 25 C, IS = 3.5 A, VGS = 0

trr

Reverse Recovery Time

 

900

 

ns

IF = IS, VDD = 100 V

 

 

 

 

 

 

 

 

 

 

 

 

dlF/ds = 100 A/ms, TJ = 150 C

1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.

 

 

 

 

 

 

 

 

 

 

2 Pulse Width limited by safe operating area.

 

 

 

 

 

 

 

 

 

 

 

 

3 OM3N100ST - All characteristics the same except RDS(on)

Series OM1N100SA/ST

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