OMNI OM120L60SB, OM100F60SB Datasheet

Loading...
OMNI OM120L60SB, OM100F60SB Datasheet

Preliminary Data Sheet

OM120L60SB OM90L120SB OM100F60SB OM70F120SB

IGBTS IN HERMETIC ISOLATED POWER

BLOCK PACKAGES

High Current, High Voltage 600V And 1200V,

Up To 150 Amp IGBTs With FRED Diodes

FEATURES

Includes Internal FRED Diode

Rugged Package Design

Solder Terminals

Very Low Saturation Voltage

Fast Switching, Low Drive Current

Available Screened To MIL-S-19500, TX, TXV And S Levels

Ceramic Feedthroughs

DESCRIPTION

This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

GENERAL CHARACTERISTICS @ 25°C

Part

VCE

IC

VCE(sat)

Type

3.1

Number

(V)

(A)

 

OM120L60SB

600

150

1.8 Volts

Lo Sat.

 

 

 

 

 

 

 

OM90L120SB

1200

140

3 Volts

Lo Sat.

 

 

 

 

 

 

 

OM100F60SB

600

150

2.7 Volts

Hi Speed

 

 

 

 

 

 

 

OM70F120SB

1200

140

4 Volts

Hi Speed

 

 

 

 

 

 

 

 

SCHEMATIC

 

C

 

E

 

G

4 11 R0

3.1 - 9

OM120L60SB OM90L120SB OM100F60SB OM70F120SB

 

 

ELECTRICAL CHARACTERISTICS:

OM120L60SB (TC = 25°C unless otherwise specified)

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter Breakdown Voltage, IC = 500 µA, VCE = 0 V

V(BR)CES

600

-

-

V

 

 

Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.

ICES

-

-

0.5

mA

 

 

 

VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C

 

-

-

2.0

mA

 

 

 

 

 

 

 

 

 

 

 

Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V

IGES

-

-

±200

nA

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA

VGE(th)

2.5

-

5.0

V

 

 

Collector Emitter Saturation Voltage, VGE = 15 V, IC = 120 A

VCE(sat)

-

-

1.8

V

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

 

VCE = 10 V, IC = 120 A

gfs

50

-

-

S

 

 

Input Capacitance

 

 

VGE = 0,

Ciss

-

8000

-

pF

 

 

Output Capacitance

 

 

VCE = 25 V,

Coss

-

680

-

pF

 

 

Reverse Transfer Capacitance

 

 

f = 1.0 mHz

Crss

-

200

-

pF

 

 

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

 

td(on)

-

50

-

nS

 

 

Rise Time

 

 

VCC = 480 V, IC = 120 A,

tr

-

200

-

nS

 

 

Turn-Off Delay Time

 

 

RGS = 2.7 , VGS = 15 V,

td(off)

-

600

-

nS

 

 

Fall Time

 

 

L = 100 µH

tf

-

500

-

nS

 

 

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-Off Delay Time

 

VCE(clamp) = 480 V, IC = 120A

td(on)

-

1000

-

nS

 

 

Fall Time

 

 

VGE = 15 V, Rg = 2.7

tf

-

1000

-

nS

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-Off Losses

 

 

L = 100 µH, Tj = 125°C

E(OFF)

-

52

-

m Ws

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage

 

 

IF = 120 A, Tj = 25°C

Vf

-

-

1.85

V

 

 

 

 

 

 

 

 

 

 

 

 

IF = 120 A, Tj = 125°C

-

-

1.50

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Reverse Current

 

 

VR = 600 V, TC = 25°C

Ir

-

-

500

µA

 

 

 

 

VR = 800 V, TC = 125°C

 

 

 

 

 

 

 

 

-

-

28

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Recovery Time

 

 

IF = 1 A, di/dt = 200 A µ/S

trr

-

-

50

nS

 

 

 

 

VR = 30 V, Tj = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS:

OM90L120SB (TC = 25°C unless otherwise specified)

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V

V(BR)CES

1200

-

-

V

 

 

Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat.

ICES

-

-

0.6

mA

 

 

 

VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C

 

-

-

2.4

mA

 

 

 

 

 

 

 

 

 

 

Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V

IGES

-

-

±200

nA

3.1

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage, VCE = VGE, IC = 8 mA

VGE(th)

4.0

-

8.0

V

 

 

Collector Emitter Saturation Voltage, VGE = 15 V, IC = 90 A

VCE(sat)

-

-

3.0

V

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

 

VCE = 6 V, IC = 90 A

gfs

50

-

-

S

 

 

Input Capacitance

 

 

VGE = 0,

Ciss

-

8500

-

pF

 

 

Output Capacitance

 

 

VCE = 25 V,

Coss

-

400

-

pF

 

 

Reverse Transfer Capacitance

 

 

f = 1.0 mHz

Crss

-

2400

-

pF

 

 

SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

 

td(on)

-

80

-

nS

 

 

Rise Time

 

 

VCC = 960 V, IC = 90 A,

tr

-

250

-

nS

 

 

Turn-Off Delay Time

 

 

RGS = 2.7 , VGS = 15 V,

td(off)

-

450

-

nS

 

 

Fall Time

 

 

L = 100 µH

tf

-

1200

-

nS

 

 

SWITCHING-INDUCTIVE LOAD CHARACTERISTICS

 

 

 

 

 

 

 

Turn-Off Delay Time

 

 

VCE(clamp) = 960 V, IC = 90 A

td(on)

-

450

-

nS

 

 

Fall Time

 

 

VGE = 15 V, Rg = 2.7

tf

-

1200

-

nS

 

 

Turn-Off Losses

 

 

L = 100 µH, Tj = 125°C

E(OFF)

-

54

-

m Ws

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage

 

 

IF = 105 A, Tj = 25°C

Vf

-

-

2.55

V

 

 

 

 

 

 

 

 

 

 

 

 

IF = 105 A, Tj = 125°C

-

-

2.15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Reverse Current

 

 

VR = 1200 V, TC = 25°C

Ir

-

-

4.4

mA

 

 

 

 

VR = 960 V, TC = 125°C

 

 

 

 

 

 

 

 

-

-

28

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Recovery Time

 

 

IF = 1 A, di/dt = 200 A µ/S

trr

-

-

60

nS

 

 

 

 

VR = 30 V, Tj = 25°C

 

 

 

 

 

 

 

 

 

 

 

3.1 - 10

+ 2 hidden pages