OMNI OM11N55SA, OM11N60SA Datasheet

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OM11N60SA

OM11N55SA

POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE

600V & 550V, 11 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

Available Screened To MIL-S-19500, TX, TXV And S

Ceramic Feedthroughs Also Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS

PART NUMBER

VDS

RDS(on)

ID(MAX)

 

 

3.1

OM11N60

600V

.50

11A

 

OM11N55

550V

.44

11A

 

 

 

 

 

 

 

 

 

SCHEMATIC

DRAIN

GATE

SOURCE

4 11 R1

3.1 - 19

Supersedes 2 04 R0

OMNI OM11N55SA, OM11N60SA Datasheet

20 - 1.3

1.3

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM11N60SA

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

600

 

 

V

VGS = 0,

 

Voltage

 

 

 

 

ID = 250 mA

 

 

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSS

Gate-Body Leakage

 

 

± 100

nA

VGS = ± 20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

 

 

 

 

TC = 125° C

 

 

 

 

 

 

 

ID(on)

On-State Drain Current1

11.0

 

 

A

VDS > ID(on) x RDS(on), VGS = 10 V

VDS(on)

Static Drain-Source On-State

 

 

3.1

V

VGS = 10 V, ID = 5.5 A

 

Voltage1

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.47

.50

 

VGS = 10 V, ID = 5.5 A

 

Resistance1

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

1.0

 

VGS = 10 V, ID = 5.5 A,

 

Resistance1

 

 

 

 

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

5.0

 

 

S)(W()

VDS 2 VDS(on), ID = 5.5 A

Ciss

Input Capacitance

 

3000

 

pF

VGS = 0

Coss

Output Capacitance

 

440

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

220

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

55

 

ns

VDD = 210 V, ID @ 7.0 A

tr

Rise Time

 

75

 

ns

Rg = 5 W , RL = 30 W

 

 

 

 

 

 

(MOSFET) switching times are

Td(off)

Turn-Off Delay Time

 

225

 

ns

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

135

 

ns

operating temperature.

 

 

 

 

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM11N55SA

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

550

 

 

V

VGS = 0,

 

Voltage

 

 

 

 

ID = 250 mA

 

 

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

±100

nA

VGS = ± 20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

 

 

 

 

TC = 125° C

 

 

 

 

 

 

 

ID(on)

On-State Drain Current1

11.0

 

 

A

VDS > ID(on) x RDS(on), VGS = 10 V

VDS(on)

Static Drain-Source On-State

 

 

3.3

V

VGS = 10 V, ID = 5.5 A

 

Voltage1

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.37

.44

 

VGS = 10 V, ID = 5.5 A

 

Resistance1

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

.88

 

VGS = 10 V, ID = 5.5 A,

 

Resistance1

 

 

 

 

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

5.0

 

 

S)(W()

VDS 2 VDS(on), ID = 5.5 A

Ciss

Input Capacitance

 

3000

 

pF

VGS = 0

Coss

Output Capacitance

 

440

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

220

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

55

 

ns

VDD = 210 V, ID @ 7.0 A

tr

Rise Time

 

75

 

ns

Rg = 5 W , RL = 30 W

 

 

 

 

 

 

(MOSFET) switching times are

Td(off)

Turn-Off Delay Time

 

225

 

ns

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

135

 

ns

operating temperature.

 

 

 

 

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

- 11

A

Modified MOSPOWER

D

 

IS

Continuous Source Current

- 11

A

Modified MOSPOWER

D

 

 

 

 

 

(Body Diode)

 

 

 

symbol showing

 

 

 

 

(Body Diode)

 

 

symbol showing

 

 

ISM

Source Current1

 

- 52

A

the integral P-N

G

 

 

ISM

Source Current1

- 52

A

the integral P-N

G

 

 

 

 

 

 

 

 

(Body Diode)

 

 

 

Junction rectifier.

 

S

 

 

(Body Diode)

 

 

Junction rectifier.

 

S

VSD

Diode Forward Voltage1

 

- 1.4

V

TC = 25 C, IS = -11 A, VGS = 0

VSD

Diode Forward Voltage1

- 1.4

V

TC = 25 C, IS = -11 A, VGS = 0

trr

Reverse Recovery Time

700

ns

TJ = 150 C,IF = IS,

 

 

trr

Reverse Recovery Time

700

ns

TJ = 150 C,IF = IS,

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

 

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle 2%.

 

 

 

 

 

OM11N55SA - OM11N60SA

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