OMNI OM10N100NK, OM3902SC, OM3903SC, OM3908SC, OM3909SC, OM460NK, OM3907SC, OM3906SC, OM3904SC, OM360NK, OM3905SC, OM3901SC Datasheet

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OMNI OM10N100NK, OM3902SC, OM3903SC, OM3908SC, OM3909SC, OM460NK, OM3907SC, OM3906SC, OM3904SC, OM360NK, OM3905SC, OM3901SC Datasheet

OM360NK OM10N100NK

OM460NK

POWER MOSFETS IN A TO-3 PACKAGE

400V Thru 1000V, N-Channel

Size 6 MOSFETs, High Energy Capability

FEATURES

TO-3 Package Hermetic, .060 Dia. Leads

Size 6 Die, High Energy

Fast Switching, Low Drive Current

Low RDS(on)

Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.

MAXIMUM RATINGS

PART NUMBER

VDS (V)

RDS(on) ( )

ID (A)

 

 

OM360NK

400

.20

24

 

 

3.1

OM460NK

500

.25

22

 

OM10N100NK

1000

1.30

10

 

 

SCHEMATIC

Drain

Gate

Source

4 11 R1

3.1 - 37

Supersedes 3 12 R0

OM360NK - OM10N100NK

 

 

ELECTRICAL CHARACTERISTICS:

OM360NK

(TC = 25° unless otherwise noted)

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min.

Typ.

Max.

Unit

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

 

V(BR)DSS

400

-

-

Vdc

 

 

Zero Gate Voltage Drain

 

 

 

IDSS

 

 

 

mAdc

 

 

(VDS = 400 V, VGS = 0)

 

 

 

 

-

-

0.25

 

 

 

(VDS = 400 V, VGS = 0, TJ = 125° C)

 

 

 

-

-

1.0

 

 

 

Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

-

-

100

nAdc

 

 

Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

-

-

100

nAdc

 

 

ON CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage

 

 

 

VGS(th)

 

 

 

Vdc

 

 

(VDS = VGS, ID = 0.25 mAdc)

 

 

 

 

2.0

3.0

4.0

 

 

 

(TJ = 125° C)

 

 

 

 

1.5

-

3.5

 

 

 

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc)

RDS(on)

-

-

0.20

Ohm

 

 

Drain-Source On-Voltage (VGS = 10 Vdc)

 

 

VDS(on)

 

 

 

Vdc

 

 

(ID = 24 A)

 

 

 

 

-

-

5.4

 

 

 

(ID = 12 A, TJ = 125° C)

 

 

 

 

-

-

5.4

 

 

 

Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)

 

gFS

14

-

-

mhos

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Input Capacitance

 

(VDS = 25 V, VGS = 0,

 

Ciss

-

4000

-

pF

 

 

Output Capacitance

 

f = 1.0 MHz)

 

Coss

-

550

-

 

 

 

Transfer Capacitance

 

 

 

 

Crss

-

110

-

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

 

 

td(on)

-

30

-

ns

 

 

Rise Time

 

(VDD = 200 V, ID = 24 A,

 

tr

-

95

-

 

 

 

Turn-Off Delay Time

 

Rgen = 4.3 ohms)

 

td(off)

-

80

-

 

 

 

Fall Time

 

 

 

 

tf

-

80

-

 

 

 

Total Gate Charge

 

(VDS = 320 V, ID = 24 A,

 

Qg

-

110

 

nC

 

 

Gate-Source Charge

 

VGS = 10 V)

 

Qgs

-

22

-

 

 

 

Gate-Drain Charge

 

 

 

 

Qgd

-

46

-

 

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

Forward On-Voltage

 

 

 

 

VSD

-

1.1

1.6

Vdc

 

 

Forward Turn-On Time

 

(IS = 24 A, d/dt = 100 A/µs)

 

ton

-

**

-

ns

 

 

Reverse Recovery Time

 

 

 

 

trr

-

500

1000

 

 

 

ELECTRICAL CHARACTERISTICS:

OM460NK

(TC = 25° unless otherwise noted)

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

 

V(BR)DSS

500

-

-

Vdc

 

 

Zero Gate Voltage Drain

 

 

 

IDSS

 

 

 

mAdc

 

 

(VDS = 500 V, VGS = 0)

 

 

 

 

-

-

0.25

 

 

 

(VDS = 500 V, VGS = 0, TJ = 125° C)

 

 

 

-

-

1.0

 

 

 

Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

-

-

100

nAdc

 

 

Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

-

-

100

nAdc

 

 

ON CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

Gate-Threshold Voltage

 

 

 

VGS(th)

 

 

 

Vdc

3.1

 

(VDS = VGS, ID = 0.25 mAdc)

 

 

 

 

2.0

3.0

4.0

 

 

(TJ = 125° C)

 

 

 

 

1.5

-

3.5

 

 

 

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc)

RDS(on)

-

-

0.25

Ohm

 

 

Drain-Source On-Voltage (VGS = 10 Vdc)

 

 

VDS(on)

 

 

 

Vdc

 

 

(ID = 22 A)

 

 

 

 

-

-

8.0

 

 

 

(ID = 11 A, TJ = 125° C)

 

 

 

 

-

-

8.0

 

 

 

Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc)

 

gFS

11

-

-

mhos

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

 

(VDS = 25 V, VGS = 0,

 

Ciss

-

4000

-

pF

 

 

Output Capacitance

 

f = 1.0 MHz)

 

Coss

-

480

-

 

 

 

Transfer Capacitance

 

 

 

 

Crss

-

95

-

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

 

 

 

 

td(on)

-

32

-

ns

 

 

Rise Time

 

(VDD = 250 V, ID = 22 A,

 

tr

-

95

-

 

 

 

Turn-Off Delay Time

 

Rgen = 4.3 ohms)

 

Td(off)

-

80

-

 

 

 

Fall Time

 

 

 

 

tf

-

80

-

 

 

 

Total Gate Charge

 

(VDS = 400 V, ID = 22 A,

 

Qg

-

115

-

nC

 

 

Gate-Source Charge

 

VGS = 10 V)

 

Qgs

-

22

-

 

 

 

Gate-Drain Charge

 

 

 

 

Qgd

-

46

-

 

 

 

SOURCE DRAIN DIODE CHARACTERISTICS

 

 

 

 

 

 

 

 

Forward On-Voltage

 

 

 

 

VSD

-

1.1

1.6

Vdc

 

 

Forward Turn-On Time

 

(IS = 22 A, d/dt =100 A/µs)

 

ton

-

**

-

ns

 

 

Reverse Recovery Time

 

 

 

 

trr

-

500

1000

 

* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance

3.1 - 38

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