OMNI OM75L60CMIB, OM75L60CMIS, OM100L60CMIS Datasheet

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OM100L60CMIS, OM75L60CMIS, OM75L60CMIB

CERMOD™ HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT’S

75 & 100 A, 600V Three Phase Bridge Configuration in Ceramic to Metal Sealed Modules

FEATURES

• Rugged, Lightweight Hermetic Ceramic Package

• NPT IGBT Technology

Soft Recovery Rectifiers

Zener Gate Protection

Short Circuit Capability

• -55 C to +150 C Operating Temperature Range

• Hi-Rel Screened Available

DESCRIPTION

C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance ceramic to metal sealed light weight package. This series of CERMOD™ power modules are offered in a three phase bridge configuration as Phase Leg and chopper configurations. Designed for tough environments, these high power modules are ideally suited in motor control, inverters, switching power supplies, in aerospace, defense, transportation and high power industrial equipment and systems.

GENERAL CHARACTERISTICS @ 25°C

PART NUMBER

V

CE,

Volts

I A M P S

V

CE

(sat) Volts

CONFIGURATION

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

OM100L60CMIS

 

600

100

 

 

2.5

3 Phase Bridge

OM75L60CMIS

 

600

75

 

 

2.5

3 Phase Bridge

 

 

 

 

 

 

 

 

OM75L60CMIB

 

600

75

 

 

2.5

3 Phase Bridge

& Braking Transistor

9 5 R0

205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246 Visit Our Web Site at www.omnirel.com

OM100L60CMIS

ELECTRICAL CHARACTERISTICS: (Tc= 25°C unless otherwise specified)

Characteristic

 

 

Symbol

Min.

Typ.

Max

Unit

OFF CHARACTERISTICS

 

 

 

 

 

 

 

Collector Emitter Breakdown Voltage,GE =0V V

VCES

600

 

 

V

Zero Gate Voltage Collector Current,GE =0, CEV V=600V

ICES

 

25

 

μA

Gate Emitter Leakage Current,GE =+/-15V,CEV=0V

IGES

 

 

2

μA

ON CHARACTERISTICS

 

 

 

 

 

 

 

Gate Threshold Voltage,CE =VGE,V

IC=6mA

VGE(TH)

4.5

6.0

6.5

V

Collector Emitter Saturation GEVoltage,=15V,IC=100AV

VCE(SAT)

 

2.0

2.5

V

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

Fwd.Transconductance

 

 

VCE =5V, CI=100A

gfs

 

55

 

S

Input Capacitance

 

 

VGE =0

Cies

 

4.5

 

nF

Output Capacitance

 

 

VCE =25V

Coes

 

0.7

 

nF

Rev. Transfer Capacitance

f=1.0MHz

Cres

 

1.7

 

nF

SWITCHING INDUCTIVE LOAD CHARACTERISTICS

 

 

 

 

 

Turn-On Delay Time

 

 

 

t(on)

 

192

 

nS

Rise Time

 

VCC = 300V,C=100AI

tr

 

81

 

nS

Turn-on Losses

 

VGE =+15/-10V,G =10RΩ

Eon

 

5.4

 

mJ

Turn-off Delay Time

 

L=100μH,Tj=125°C

td(off)

 

285

 

nS

Fall Time

 

 

 

tf

 

44

 

nS

Turn-off Losses

 

 

 

Eoff

 

1.4

 

mJ

DIODE CHARACTERISTICS

 

 

 

 

 

 

 

Maximum Forward Voltage

 

 

IF=100A, Tj=25°C

VF

 

1.4

1.8

V

 

 

 

Tj=125°C

 

 

1.5

1.9

 

 

 

 

VR=300V, Tj=25°C

Qrr

 

2

 

μC

Reverse Recovery

 

 

IF=100A, Tj=125°C

 

 

3.7

 

 

Characteristics

 

dI/dt=-1080A/μS Tj=25°C

Irr

 

51

 

A

 

 

 

Tj=125°C

 

 

68

 

 

 

 

 

Tj=25°C

trr

 

124

 

nS

 

 

 

Tj=125°C

 

 

215

 

 

THERMAL AND MECHANICAL CHARACTERISTICS

 

 

 

 

 

Thermal Resistance, Junction to Case (Per IGBT)RthJC

 

 

0.35

°C/W

Thermal Resistance, Junction to Case (Per Diode)RthJC

 

 

0.6

°C/W

Maximum Junction Temperature

TjMAX

 

 

150

°C

Isolation Voltage

 

 

VisRMS

 

 

-

V

Screw Torque

 

 

-Mounting

15

20

inlb-

Module Weight

 

 

-

 

250

 

Grams

 

 

 

 

 

 

 

 

 

Rev.05

Omnirel LLC

205 Crawford Street, Leominster, MA 01453

4/15/99

www.omnirel.com(978) 534-5776 FAX (978) 537-4246

OMNI OM75L60CMIB, OM75L60CMIS, OM100L60CMIS Datasheet

OM100L60CMIS

IGBT Collector Current vs Collector Emitter Tj=25C

120

13Vge

 

100

 

15Vge

11Vge

80

 

Ic(A)60

9Vge

40

20

0

0

1

2

3

4

5

6

Vce(V)

IGBT Collector Current vs Collector Emitter Tj=-55C

120

 

 

13Vge

 

 

 

100

 

15Vge

11Vge

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

Ic(A)60

 

 

 

 

 

9Vge

 

 

 

 

 

 

40

 

 

 

 

 

 

20

 

 

 

 

 

 

0

 

 

 

 

 

 

0

1

2

3

4

5

6

 

 

 

Vce(V)

 

 

 

Switcing Energy vs Temperature Vce=300V,Ic

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

Energy(mJ)

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

Eon

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

Eof

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

 

 

 

 

 

 

 

T(C)

 

 

 

 

 

 

Diode Forward Current vs. Forward Vo

Vge =0V

120

100

80

+25C

If(A)60

 

 

 

 

 

 

 

 

+125C

40

 

 

 

 

 

 

 

-55C

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

 

 

 

 

Vf(V)

 

 

 

 

IGBT Collector Current vs Collector Emitter

 

 

 

Tj=+125C

 

 

 

120

 

 

13Vge

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

80

 

15Vge

 

 

 

 

 

 

11Vge

 

 

 

 

 

 

 

 

 

Ic(A)60

 

 

 

 

 

9Vge

 

 

 

 

 

 

40

 

 

 

 

 

 

20

 

 

 

 

 

 

0

 

 

 

 

 

 

0

1

2

3

4

5

6

 

 

 

Vce(V)

 

 

 

Switching Energy vs Collector Curre

Vce=100V,Tj=25C

 

6

 

5

Energy(mJ)

4

Eon

 

3

 

Eof

 

2

 

1

 

0

 

0

 

 

50

Ic(A)

100

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Energy vs Gate Resiste

 

 

 

 

 

8

 

 

 

Vce=300V,Ic=100,Tj=25C

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Energy(mJ)

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Eon

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Eof

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

10

15

20

25

30

35

 

 

 

 

 

 

 

 

 

Rg(ohms)

 

 

 

 

 

 

 

 

Rev.05

Omnirel LLC

205 Crawford Street, Leominster, MA 01453 U

4/15/99

www.omnirel.com(978) 534-5776 FAX (978) 537-4246

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