OMNI OM120L60SB, OM100F60SB Datasheet
Loading...
Preliminary Data Sheet
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
High Current, High Voltage 600V And 1200V,
Up To 150 Amp IGBTs With FRED Diodes
FEATURES
•Includes Internal FRED Diode
•Rugged Package Design
•Solder Terminals
•Very Low Saturation Voltage
•Fast Switching, Low Drive Current
•Available Screened To MIL-S-19500, TX, TXV And S Levels
•Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
GENERAL CHARACTERISTICS @ 25°C
Part |
VCE |
IC |
VCE(sat) |
Type |
3.1 |
Number |
(V) |
(A) |
|
||
OM120L60SB |
600 |
150 |
1.8 Volts |
Lo Sat. |
|
|
|
|
|
|
|
OM90L120SB |
1200 |
140 |
3 Volts |
Lo Sat. |
|
|
|
|
|
|
|
OM100F60SB |
600 |
150 |
2.7 Volts |
Hi Speed |
|
|
|
|
|
|
|
OM70F120SB |
1200 |
140 |
4 Volts |
Hi Speed |
|
|
|
|
|
|
|
|
SCHEMATIC |
|
C |
|
E |
|
G |
4 11 R0 |
3.1 - 9 |
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
|
|
ELECTRICAL CHARACTERISTICS: |
OM120L60SB (TC = 25°C unless otherwise specified) |
|
|
|
||||
|
|
Characteristic |
|
|
|
Symbol |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
Collector Emitter Breakdown Voltage, IC = 500 µA, VCE = 0 V |
V(BR)CES |
600 |
- |
- |
V |
|||
|
|
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. |
ICES |
- |
- |
0.5 |
mA |
|||
|
|
|
VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C |
|
- |
- |
2.0 |
mA |
||
|
|
|
|
|
|
|
|
|
||
|
|
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V |
IGES |
- |
- |
±200 |
nA |
|||
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA |
VGE(th) |
2.5 |
- |
5.0 |
V |
|||
|
|
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 120 A |
VCE(sat) |
- |
- |
1.8 |
V |
|||
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Transconductance |
|
|
VCE = 10 V, IC = 120 A |
gfs |
50 |
- |
- |
S |
|
|
Input Capacitance |
|
|
VGE = 0, |
Ciss |
- |
8000 |
- |
pF |
|
|
Output Capacitance |
|
|
VCE = 25 V, |
Coss |
- |
680 |
- |
pF |
|
|
Reverse Transfer Capacitance |
|
|
f = 1.0 mHz |
Crss |
- |
200 |
- |
pF |
|
|
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS |
|
|
|
|
|
|||
|
|
Turn-On Delay Time |
|
|
|
td(on) |
- |
50 |
- |
nS |
|
|
Rise Time |
|
|
VCC = 480 V, IC = 120 A, |
tr |
- |
200 |
- |
nS |
|
|
Turn-Off Delay Time |
|
|
RGS = 2.7 , VGS = 15 V, |
td(off) |
- |
600 |
- |
nS |
|
|
Fall Time |
|
|
L = 100 µH |
tf |
- |
500 |
- |
nS |
|
|
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-Off Delay Time |
|
VCE(clamp) = 480 V, IC = 120A |
td(on) |
- |
1000 |
- |
nS |
|
|
|
Fall Time |
|
|
VGE = 15 V, Rg = 2.7 |
tf |
- |
1000 |
- |
nS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-Off Losses |
|
|
L = 100 µH, Tj = 125°C |
E(OFF) |
- |
52 |
- |
m Ws |
|
|
SOURCE DRAIN DIODE CHARACTERISTICS |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum Forward Voltage |
|
|
IF = 120 A, Tj = 25°C |
Vf |
- |
- |
1.85 |
V |
|
|
|
|
|
|
|
|
|||
|
|
|
|
IF = 120 A, Tj = 125°C |
- |
- |
1.50 |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum Reverse Current |
|
|
VR = 600 V, TC = 25°C |
Ir |
- |
- |
500 |
µA |
|
|
|
|
VR = 800 V, TC = 125°C |
|
|
|
|
||
|
|
|
|
- |
- |
28 |
mA |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
Reverse Recovery Time |
|
|
IF = 1 A, di/dt = 200 A µ/S |
trr |
- |
- |
50 |
nS |
|
|
|
|
VR = 30 V, Tj = 25°C |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS: |
OM90L120SB (TC = 25°C unless otherwise specified) |
|
|
|
||||
|
|
Characteristic |
|
|
|
Symbol |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V |
V(BR)CES |
1200 |
- |
- |
V |
|||
|
|
Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. |
ICES |
- |
- |
0.6 |
mA |
|||
|
|
|
VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C |
|
- |
- |
2.4 |
mA |
||
|
|
|
|
|
|
|
|
|||
|
|
Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V |
IGES |
- |
- |
±200 |
nA |
|||
3.1 |
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
Gate-Threshold Voltage, VCE = VGE, IC = 8 mA |
VGE(th) |
4.0 |
- |
8.0 |
V |
||||
|
|
Collector Emitter Saturation Voltage, VGE = 15 V, IC = 90 A |
VCE(sat) |
- |
- |
3.0 |
V |
|||
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Transconductance |
|
|
VCE = 6 V, IC = 90 A |
gfs |
50 |
- |
- |
S |
|
|
Input Capacitance |
|
|
VGE = 0, |
Ciss |
- |
8500 |
- |
pF |
|
|
Output Capacitance |
|
|
VCE = 25 V, |
Coss |
- |
400 |
- |
pF |
|
|
Reverse Transfer Capacitance |
|
|
f = 1.0 mHz |
Crss |
- |
2400 |
- |
pF |
|
|
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS |
|
|
|
|
|
|||
|
|
Turn-On Delay Time |
|
|
|
td(on) |
- |
80 |
- |
nS |
|
|
Rise Time |
|
|
VCC = 960 V, IC = 90 A, |
tr |
- |
250 |
- |
nS |
|
|
Turn-Off Delay Time |
|
|
RGS = 2.7 , VGS = 15 V, |
td(off) |
- |
450 |
- |
nS |
|
|
Fall Time |
|
|
L = 100 µH |
tf |
- |
1200 |
- |
nS |
|
|
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS |
|
|
|
|
|
|||
|
|
Turn-Off Delay Time |
|
|
VCE(clamp) = 960 V, IC = 90 A |
td(on) |
- |
450 |
- |
nS |
|
|
Fall Time |
|
|
VGE = 15 V, Rg = 2.7 |
tf |
- |
1200 |
- |
nS |
|
|
Turn-Off Losses |
|
|
L = 100 µH, Tj = 125°C |
E(OFF) |
- |
54 |
- |
m Ws |
|
|
SOURCE DRAIN DIODE CHARACTERISTICS |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum Forward Voltage |
|
|
IF = 105 A, Tj = 25°C |
Vf |
- |
- |
2.55 |
V |
|
|
|
|
|
|
|
|
|||
|
|
|
|
IF = 105 A, Tj = 125°C |
- |
- |
2.15 |
|||
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum Reverse Current |
|
|
VR = 1200 V, TC = 25°C |
Ir |
- |
- |
4.4 |
mA |
|
|
|
|
VR = 960 V, TC = 125°C |
|
|
|
|
||
|
|
|
|
- |
- |
28 |
mA |
|||
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Reverse Recovery Time |
|
|
IF = 1 A, di/dt = 200 A µ/S |
trr |
- |
- |
60 |
nS |
|
|
|
|
VR = 30 V, Tj = 25°C |
||||||
|
|
|
|
|
|
|
|
|
|
|
3.1 - 10