OMNI 2N6802, 2N6800, 2N6798, 2N6796, JANTXV2N6802, JANTXV2N6796, JANTX2N6796, JANTX2N6802, JANTX2N6800, JANTXV2N6800, JANTXV2N6798, JANTX2N6798 Datasheet

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OMNI 2N6802, 2N6800, 2N6798, 2N6796, JANTXV2N6802, JANTXV2N6796, JANTX2N6796, JANTX2N6802, JANTX2N6800, JANTXV2N6800, JANTXV2N6798, JANTX2N6798 Datasheet

2N6796, JANTX2N6796 JANTXV2N6796

2N6800, JANTX2N6800, JANTXV2N6800

2N6798, JANTX2N6798 JANTXV2N6798

2N6802, JANTX2N6802, JANTXV2N6802

 

 

JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557

100 V, 200 V, 400 V & 500 V, N-Channel,

Enhancement Mode MOSFET Power Transistor

FEATURES

Low RDS(on)

Ease of Paralleling

Qualified to MIL-PRF-19500/557

DESCRIPTION

This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25°C

 

PART NUMBER

VDS, Volts

 

RDS(on)

ID, Amps

 

 

2N6796

100

 

.18

8.0

 

 

2N6798

200

 

.40

5.5

 

 

2N6800

400

 

1.00

3.0

 

 

2N6802

500

 

1.50

2.5

 

 

 

 

 

 

 

 

SCHEMATIC

 

MECHANICAL OUTLINE

 

 

 

 

 

 

 

Pin Connection

Pin 1: Source

Pin 2: Gate

Pin 3: Drain

(Case)

7 03 R0

 

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

 

 

 

 

 

2N6796, JANTX2N6796 JANTXV2N6796

2N6800, JANTX2N6800, JANTXV2N6800

 

2N6798, JANTX2N6798 JANTXV2N6798

2N6802, JANTX2N6802, JANTXV2N6802

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

JANTXV, JANTX, 2N6796

Units

 

 

 

ID @

VGS = 10V, TC = 25°C

Continuous Drain Current

 

8.0

A

 

 

 

ID @

VGS = 10V, TC = 100°C

Continuous Drain Current

 

5.0

A

 

 

 

ID M

 

Pulsed Drain Current1

 

32

A

 

 

 

PD @

TC = 25°C

Maximum Power Dissipation

 

25

W

 

 

 

 

 

Linear Derating Factor

 

0.2

W/°C

 

 

 

VG S

 

Gate-Source Voltage

 

± 20

V

 

 

 

EAS

 

Single Pulse Avalanche Energy 2

 

4.3 4

mJ

 

 

 

TJ

 

Operating Junction

 

-55 to 150

°C

 

 

 

TSTG

 

Storage Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

Lead Temperature

 

300(.06 from case for 10 sec)

°C

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)

 

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source

100

 

 

V

VG S =0V,ID =1.0 mA,

 

Breakdown Voltage

 

 

 

 

 

RDS(on)

Static Drain-to-Source

-

-

.18

 

VG S =10V,ID = 5.0 A 3

 

On-State Resistance

-

-

.195

 

VG S =10V,ID = 8.0 A 3

VGS(th)

Gate Threshold Voltage

2.0

-

4.0

V

VDS = VG S,ID = 250 µA

IDSS

Zero Gate Voltage Drain

-

-

25

µA

VDS = 80 V, VG S = 0V

 

Current

-

-

250

VDS = 80 V, VG S = 0V, TJ = 125°C

 

 

IGSS

Gate -to-Source Leakage Forward

-

-

100

nA

VG S = 20 V

IGSS

Gate -to-Source Leakage Reverse

-

-

-100

nA

VG S = -20 V

QG(on)

On-state Gate Charge

-

-

28.5

nC

VG S =10V,ID = 8A

QG S

Gate-to-Source Charge

-

-

6.3

nC

VDS = 50 V

QGd

Gate-to-Drain (“Miller”) Charge

-

-

16.6

nC

See note 4

tD(on)

Turn-On Delay Time

-

-

30

ns

VD D =30V,ID = 5.0 A, RG =7.5

tr

Rise Time

-

-

75

ns

See note 4

tD(off)

Turn-Off Delay Time

-

-

40

ns

 

tr

Fall Time

-

-

45

ns

 

Source-Drain Diode Ratings and Characteristics

 

 

 

 

 

Parameter

Min.

Typ.

Max.

Units

Test Conditions

VSD

Diode Forward Voltage

-

-

1.5

V

TJ = 25°C, IS = 8.0A 3,VG S = 0 V 3

 

 

 

 

 

 

ttr

Reverse Recovery Time

-

-

300

ns

TJ = 25°C, IF= 8.0 A,di/dt < 100 A/µs

3

 

 

 

 

 

 

Thermal Resistance

 

 

 

 

 

 

Parameter

Min.

Typ.

Max.

Units

Test Conditions

RthJC

Junction-to-Case

-

-

5.0

 

Mounting surface flat,

RthCS

Case-to-sink

-

0.21

-

°C/W

smooth, and greased

RthJA

Junction-to-Ambient

-

-

175

 

Typical socket mount

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

@VD D= 25 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 8.0 A

3.

Pulse width < 300 µs; Duty Cycle < 2 %

4.

See MIL-S-19500/557

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

+ 3 hidden pages