OMNI COM450A, COM350A, COM250A, COM150A Datasheet

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COM150A COM350A

COM250A COM450A

(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PACKAGE

100V Thru 500V, Up To 25 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

Standard Off-The-Shelf

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS @ 25°C

 

 

PART NUMBER

VD S

 

RDS(on)

 

 

 

ID

 

 

 

 

COM150A

100 V

.070

 

 

 

 

 

25 A

 

 

 

 

COM250A

200 V

.100

 

 

 

 

 

20 A

 

 

 

 

 

 

 

 

 

 

3.1

 

 

COM350A

400 V

.32

 

 

 

 

 

12 A

 

 

 

 

 

 

 

 

 

 

 

 

 

COM450A

500 V

.42

 

 

 

 

 

10 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S C H E M ATIC

 

 

POWER

RATING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8 09 R0

3.1- 1

 

OMNI COM450A, COM350A, COM250A, COM150A Datasheet

2 -1.3

1.3

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM150A

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

100

 

 

V

VG S =0,

 

Voltage

 

 

ID = 250 mA

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VD S = VG S,ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VG S = +20 V

IGSSR

Gate-Body Leakage Reverse

 

 

- 100

nA

VG S = -20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

m A

VD S = Max. Rat., VG S = 0

 

Current

 

0.2

1.0

m A

VD S = 0.8 Max. Rat., VG S =0,

 

 

 

TC = 125° C

 

 

 

 

 

 

ID(on)

On-State Drain Current1

35

 

 

A

VD S 2 VDS(on),VG S = 10 V

VDS(on)

Static Drain-Source On-State

 

1.1

1.3

V

VG S = 10 V, ID = 20 A

 

Voltage1

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

0.55

0.07

 

VG S = 10 V, ID = 20 A

 

Resistance1

 

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

1.0

0.12

 

VG S = 10 V, ID = 20 A,

 

Resistance1

 

 

TC = 125 C

 

 

 

 

 

DYNAMIC

gfs

Forward Transductance1

9.0

 

 

S)(W)(W

VD S 2 VDS(on),ID = 20 A

Ciss

Input Capacitance

 

2700

 

pF

VG S = 0

Coss

Output Capacitance

 

1300

 

pF

VD S = 25 V

Crss

Reverse Transfer Capacitance

 

470

 

pF

f = 1 MHz

td(on)

Turn-On Delay Time

 

28

 

ns

VD D = 30 V, ID @ 20 A

tr

Rise Time

 

45

 

ns

Rg = 5.0 W,VG = 10V

td(off)

Turn-Off Delay Time

 

100

 

ns

(MOSFET switching times are

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

50

 

ns

operating temperature.)

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM250A

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

200

 

 

V

VG S =0,

 

Voltage

 

 

ID = 250 mA

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VD S = VG S,ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VG S = + 20 V

IGSSR

Gate-Body Leakage Reverse

 

 

-100

nA

VG S = - 20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

m A

VD S = Max. Rat., VG S = 0

 

Current

 

0.2

1.0

m A

VD S = 0.8 Max. Rat., VG S =0,

 

 

 

TC = 125° C

 

 

 

 

 

 

ID(on)

On-State Drain Current1

30

 

 

A

VD S 2 VDS(on),VG S = 10 V

VDS(on)

Static Drain-Source On-State

 

1.36

1.60

V

VG S = 10 V, ID = 16 A

 

Voltage1

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.085

.100

 

VG S = 10 V, ID = 16 A

 

Resistance1

 

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

0.15

0.18

 

VG S = 10 V, ID = 16 A,

 

Resistance1

 

 

TC = 125 C

 

 

 

 

 

DYNAMIC

gfs

Forward Transductance1

10.0

 

 

S)(W)(W

VD S 2 VDS(on),ID = 16 A

Ciss

Input Capacitance

 

2400

 

pF

VG S = 0

Coss

Output Capacitance

 

600

 

pF

VD S = 25 V

Crss

Reverse Transfer Capacitance

 

250

 

pF

f = 1 MHz

td(on)

Turn-On Delay Time

 

25

 

ns

VD D = 75 V, ID @ 16 A

tr

Rise Time

 

60

 

ns

Rg = 5.0 W,VG S = 10V

td(off)

Turn-Off Delay Time

 

85

 

ns

(MOSFET switching times are

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

38

 

ns

operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

 

 

Modified MOSPOWER

D

 

-40

A

 

 

(Body Diode)

 

 

symbol showing

 

 

 

 

 

 

 

IS M

Source Current1

 

 

 

 

G

 

 

 

- 160

A

the integral P-N

 

 

(Body Diode)

 

 

Junction rectifier.

S

 

 

 

 

 

VS D

Diode Forward Voltage1

 

-2.5

V

TC = 25 C,IS = -40 A, VG S = 0

tr

Reverse Recovery Time

400

ns

TJ = 150 C,IF =IS,

 

dlF/ds = 100 A/ms

 

 

 

 

 

 

 

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle

2%.

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

 

 

Modified MOSPOWER

D

 

-30

A

 

 

(Body Diode)

 

 

symbol showing

 

 

 

 

 

 

 

IS M

Source Current1

 

 

 

 

G

 

 

 

- 120

A

the integral P-N

 

 

(Body Diode)

 

 

Junction rectifier.

S

 

 

 

 

 

VS D

Diode Forward Voltage1

 

-2

V

TC = 25 C,IS = -30 A, VG S = 0

tr

Reverse Recovery Time

350

ns

TJ = 150 C,IF =IS,

 

dlF/ds = 100 A/ms

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle

2%.

 

 

 

COM450A - COM150A

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