NSC DS26F32MDS, DS26F32MD8, DS26F32MWF-QML, DS26F32MW8, DS26F32MJF-QML Datasheet

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NSC DS26F32MDS, DS26F32MD8, DS26F32MWF-QML, DS26F32MW8, DS26F32MJF-QML Datasheet

May 1999

DS26F32M

Quad Differential Line Receivers

General Description

The DS26F32 is a quad differential line receiver designed to meet the requirements of EIA Standards RS-422 and RS-423, and Federal Standards 1020 and 1030 for balanced and unbalanced digital data transmission.

The DS26F32 offers improved performance due to the use of state-of-the-art L-FAST bipolar technology. The L-FAST technology allows for higher speeds and lower currents by utilizing extremely short gate delay times. Thus, the DS26F32 features lower power, extended temperature range, and improved specifications.

The device features an input sensitivity of 200 mV over the input common mode range of ±7.0V. The DS26F32 provides an enable function common to all four receivers and TRI-STATE ® outputs with 8.0 mA sink capability. Also, a fail-safe input/output relationship keeps the outputs high when the inputs are open.

The DS26F32 offers optimum performance when used with the DS26F31 Quad Differential Line Driver.

Features

nMilitary temperature range

nInput voltage range of ±7.0V (differential or common mode) ±0.2V sensitivity over the input voltage range

nMeets all the requirements of EIA standards RS-422 and RS-423

nHigh input impedance (18k typical)

n30 mV input hysteresis

nOperation from single +5.0V supply

nInput pull-down resistor prevents output oscillation on unused channels

nTRI-STATE outputs, with choice of complementary enables, for receiving directly onto a data bus

nPropagation delay 15 ns typical

Connection Diagrams

20-Lead Ceramic Leadless Chip Carrier

16-Lead DIP

DS009615-1

Top View

See NS Package Number J16A

For Complete Military Product Specifications, refer to the appropriate SMD or MDS.

Order Number DS26F32ME/883, DS26F32MJ/883 or DS26F32MW/883

See NS Package Number E20A, J16A or W16A

DS009615-7

Function Table

(Each Receiver)

Differential Inputs

Enables

Outputs

 

 

 

 

 

 

VID = (V IN+) − (V IN−)

E

 

 

 

 

E

 

OUT

VID ³ 0.2V

H

 

X

H

 

X

 

L

H

 

 

 

 

 

 

VID £ −0.2V

H

X

L

 

X

 

L

L

 

 

 

 

 

 

X

L

H

Z

 

 

 

 

 

 

H = High Level

L = Low Level

X = Immaterial

TRI-STATE® is a registered trademark of National Semiconductor Corporation.

Receivers Line Differential DS26F32MQuad

© 1999 National Semiconductor Corporation

DS009615

www.national.com

Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Storage Temperature Range

 

Ceramic DIP

−65ÊC + to 175ÊC

Operating Temperature Range

 

DS26F32M

−55ÊC to +125ÊC

DS26F32C

0ÊC to +70ÊC

Lead Temperature

 

Ceramic DIP (soldering, 60

 

sec)

300ÊC

Maximum Power Dissipation (Note 1) at 25ÊC

Electrical Characteristics (Notes 3, 4)

Over operating range, unless otherwise specified

Cavity Package

1500 mW

Supply Voltage

7.0V

Common Mode Voltage Range

±25V

Differential Input Voltage

±25V

Enable Voltage

7.0V

Output Sink Current

50 mA

Operating Range

DS26F32M

 

Temperature

−55ÊC to +125ÊC

Supply Voltage

4.5V to 5.5V

Note 1: Derate cavity package 10 mW/ÊC above 25ÊC.

Symbol

Parameter

 

 

 

Conditions

Min

Typ

Max

Units

VTH

Differential Input Voltage

−7.0V VCM +7.0V,

−0.2

±0.06

+0.2

V

 

 

V O = VOL or VOH

 

 

 

 

 

 

RI

Input Resistance

−15V VCM +15V,

14

18

 

kΩ

 

 

One Input AC Ground

 

 

 

 

II

Input Current (under Test)

V I

= +15V,

 

 

 

 

2.3

 

 

 

Other Input −15V VI +15V

 

 

 

mA

 

 

V I

= −15V,

 

 

 

 

−2.8

 

 

 

Other Input −15V

VI +15V

 

 

 

 

VOH

Output Voltage HIGH

VCC = Min,

 

0ÊC to +70ÊC

2.8

3.4

 

 

 

 

VI = +1.0V,

 

 

 

 

 

V

 

 

V

 

= 0.8V,

 

−55ÊC to +125ÊC

2.5

3.4

 

 

 

 

ENABLE

 

 

 

 

 

IOH = −440 µA

 

 

 

 

 

 

VOL

Output Voltage LOW

 

 

VCC = Min,

 

IOL = 4.0 mA

 

 

0.4

 

 

 

 

 

VI = −1.0V,

 

I OL = 8.0 mA

 

 

0.45

V

 

 

V

 

= 0.8V

 

 

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

VIL

Enable Voltage LOW

 

 

 

 

 

 

 

 

0.8

V

VIH

Enable Voltage HIGH

 

 

 

 

 

 

2.0

 

 

V

VIC

Enable Clamp Voltage

V CC = Min, II = −18 mA

 

 

−1.5

V

IOZ

Off State (High Impedance)

VCC = Max

 

VO = 2.4V

 

 

20

µA

 

Output Current

 

 

 

 

 

VO = 0.4V

 

 

−20

 

IIL

Enable Current LOW

VI

= 0.4V

 

 

 

−0.2

−0.36

mA

IIH

Enable Current HIGH

VI

= 2.7V

 

 

 

0.5

10

µA

II

Enable Input High Current

VI

= 5.5V

 

 

 

1.0

50

µA

IOS

Output Short Circuit Current

V O = 0V, VCC = Max, (Note 5)

−15

−50

−85

mA

 

 

V I = +1.0V

 

 

 

 

 

 

ICC

Supply Current

V CC = Max, All VI = GND,

 

30

50

mA

 

 

Outputs Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VHYST

Input Hysteresis

T A = 25ÊC, VCC = 5.0V, VCM = 0V

 

30

 

mV

Note 2: ªAbsolute Maximum Ratingsº are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of ªElectrical Characteristicsº provide conditions for actual device operation.

Note 3: Unless otherwise specified min/max limits apply across the −55ÊC to +125ÊC temperature range for the DS26F32M and across the 0ÊC to +70ÊC range for the DS26F32C. All typicals are given for V CC = 5V and TA = 25ÊC.

Note 4: All currents into the device pins are positive; all currents out of the device pins are negative. All voltages are reference to ground unless otherwise specified.

Note 5: Only one output at a time should be shorted.

www.national.com

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