DATA SHEET
SILICON TRANSISTOR
μPA811T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD
The μPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
•Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
•High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
•A Small Mini Mold Package Adopted
•Built-in 2 Transistors (2 × 2SC4228)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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3 |
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4 |
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ORDERING INFORMATION
PART NUMBER |
QUANTITY |
PACKING STYLE |
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μPA811T |
Loose products |
Embossed tape 8 mm wide. Pin 6 (Q1 |
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(50 PCS) |
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) |
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face to perforation side of the tape. |
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μPA811T-T1 |
Taping products |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER |
SYMBOL |
RATING |
UNIT |
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Collector to Base Voltage |
VCBO |
20 |
V |
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Collector to Emitter Voltage |
VCEO |
10 |
V |
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Emitter to Base Voltage |
VEBO |
1.5 |
V |
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Collector Current |
IC |
35 |
mA |
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Total Power Dissipation |
PT |
150 in 1 element |
mW |
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200 in 2 elementsNote |
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Junction Temperature |
Tj |
150 |
˚C |
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Storage Temperature |
Tstg |
–65 to +150 |
˚C |
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Note 110 mW must not be exceeded in 1 element.
0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0.1 |
0.15 |
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0 to |
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PIN CONFIGURATION (Top View)
6 5 4
Q1 |
Q2 |
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2 |
3 |
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PIN CONNECTIONS |
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1. |
Collector (Q1) |
4. |
Emitter (Q2) |
2. |
Base (Q2) |
5. |
Emitter (Q1) |
3. |
Collector (Q2) |
6. |
Base (Q1) |
The information in this document is subject to change without notice.
Document No. P11464EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan |
© |
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1996 |
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μPA811T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 10 V, IE = 0 |
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1.0 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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1.0 |
μA |
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DC Current Gain |
hFE |
VCE = 3 V, IC = 5 mANote 1 |
80 |
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200 |
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Gain Bandwidth Product |
fT |
VCE = 3 V, IC = 5 mA |
5.5 |
8.0 |
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GHz |
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Feed-back Capacitance |
Cre |
VCB = 3 |
V, IE = 0, f = 1 MHzNote 2 |
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0.7 |
pF |
Insertion Power Gain |
|S21e|2 |
VCE = 3 |
V, IC = 5 mA, f = 2 GHz |
5.5 |
7.5 |
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dB |
Noise Figure |
NF |
VCE = 3 |
V, IC = 5 mA, f = 2 GHz |
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1.9 |
3.2 |
dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 3 |
V, IC = 5 mA |
0.85 |
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A smaller value among hFE of hFE1 = Q1, Q2 |
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A Larger value among hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 % |
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2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
FB |
GB |
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Marking |
44R |
45R |
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hFE Value |
80 to 160 |
125 to 250 |
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TYPICAL |
CHARACTERISTICS |
(TA = 25 °C) |
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PT - TA Characteristics |
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(mW) |
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Free Air |
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200 |
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PT |
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Dissipation |
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2 |
Elements |
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Per |
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in |
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100 |
Element |
Total |
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Total Power |
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0 |
50 |
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100 |
150 |
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Ambient Temperature TA (°C) |
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IC - VBE Characteristics |
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20
VCE = 3 V
IC (mA) |
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CurrentCollector |
10 |
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0 |
0.5 |
1.0 |
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Base to Emitter Voltage VBE (V) |
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Collector Current IC (mA)
DC Current Gain hFE
IC - VCE Characteristics
25 |
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μ |
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A |
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20 |
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160 |
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μ |
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140 |
A |
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15 |
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120 |
μA |
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100 |
μA |
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80 |
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10 |
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A |
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60 |
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μA |
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5 |
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40 μA |
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IB = 20 |
μA |
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0 |
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5 |
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1.0 |
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Collector to Emitter Voltage VCE (V) |
h FE - IC Characteristics
200
VCE = 3 V
100 |
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50 |
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20 |
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10 |
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0.5 |
1 |
5 |
10 |
50 |
Collector Current IC (mA)
2