NEC UPA811T-T1, UPA811T Datasheet

0 (0)

DATA SHEET

SILICON TRANSISTOR

μPA811T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD

The μPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

Low Noise

NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

High Gain

|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

A Small Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC4228)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

 

 

 

 

 

 

+0.1

–0

2.0±0.2

1.3

0.65 0.65

2 1

Y X

5 6

0.2

 

 

 

3

 

4

 

 

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

 

 

 

μPA811T

Loose products

Embossed tape 8 mm wide. Pin 6 (Q1

 

(50 PCS)

Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)

 

 

face to perforation side of the tape.

 

 

 

μPA811T-T1

Taping products

 

 

(3 KPCS/Reel)

 

 

 

 

Remark If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

RATING

UNIT

 

 

 

 

Collector to Base Voltage

VCBO

20

V

 

 

 

 

Collector to Emitter Voltage

VCEO

10

V

 

 

 

 

Emitter to Base Voltage

VEBO

1.5

V

 

 

 

 

Collector Current

IC

35

mA

 

 

 

 

Total Power Dissipation

PT

150 in 1 element

mW

 

 

200 in 2 elementsNote

 

Junction Temperature

Tj

150

˚C

 

 

 

 

Storage Temperature

Tstg

–65 to +150

˚C

 

 

 

 

Note 110 mW must not be exceeded in 1 element.

0.9±0.1

0.7

+0.1

–0

 

0.1

0.15

 

0 to

 

 

PIN CONFIGURATION (Top View)

6 5 4

Q1

Q2

 

 

 

 

 

 

 

 

 

 

 

1

 

2

3

 

 

 

 

 

 

 

 

 

 

PIN CONNECTIONS

 

1.

Collector (Q1)

4.

Emitter (Q2)

2.

Base (Q2)

5.

Emitter (Q1)

3.

Collector (Q2)

6.

Base (Q1)

The information in this document is subject to change without notice.

Document No. P11464EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

 

1996

 

 

 

NEC UPA811T-T1, UPA811T Datasheet

μPA811T

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

SYMBOL

 

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB = 10 V, IE = 0

 

 

1.0

μA

 

 

 

 

 

 

 

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

 

 

1.0

μA

 

 

 

 

 

 

 

DC Current Gain

hFE

VCE = 3 V, IC = 5 mANote 1

80

 

200

 

Gain Bandwidth Product

fT

VCE = 3 V, IC = 5 mA

5.5

8.0

 

GHz

 

 

 

 

 

 

 

 

Feed-back Capacitance

Cre

VCB = 3

V, IE = 0, f = 1 MHzNote 2

 

 

0.7

pF

Insertion Power Gain

|S21e|2

VCE = 3

V, IC = 5 mA, f = 2 GHz

5.5

7.5

 

dB

Noise Figure

NF

VCE = 3

V, IC = 5 mA, f = 2 GHz

 

1.9

3.2

dB

 

 

 

 

 

 

 

 

hFE Ratio

hFE1/hFE2

VCE = 3

V, IC = 5 mA

0.85

 

 

 

 

 

A smaller value among hFE of hFE1 = Q1, Q2

 

 

 

 

 

 

A Larger value among hFE of hFE2 = Q1, Q2

 

 

 

 

 

 

 

 

 

 

 

Notes 1. Pulse Measurement: Pw 350 μs, Duty cycle 2 %

 

 

 

 

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

FB

GB

 

 

 

Marking

44R

45R

 

 

 

hFE Value

80 to 160

125 to 250

 

 

 

TYPICAL

CHARACTERISTICS

(TA = 25 °C)

 

 

PT - TA Characteristics

 

(mW)

 

 

 

 

 

Free Air

 

200

 

 

 

 

 

 

PT

 

 

 

 

 

 

 

Dissipation

 

 

2

Elements

 

 

 

 

Per

 

in

 

 

100

Element

Total

 

Total Power

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

50

 

 

100

150

 

 

Ambient Temperature TA (°C)

 

 

 

IC - VBE Characteristics

 

20

VCE = 3 V

IC (mA)

 

CurrentCollector

10

 

0

0.5

1.0

 

Base to Emitter Voltage VBE (V)

 

Collector Current IC (mA)

DC Current Gain hFE

IC - VCE Characteristics

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

 

 

20

 

 

 

 

 

 

 

160

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μ

 

 

 

 

 

 

 

 

 

 

140

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

120

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

μ

 

 

10

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

60

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

40 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB = 20

μA

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

1.0

 

 

Collector to Emitter Voltage VCE (V)

h FE - IC Characteristics

200

VCE = 3 V

100

 

 

 

 

50

 

 

 

 

20

 

 

 

 

10

 

 

 

 

0.5

1

5

10

50

Collector Current IC (mA)

2

Loading...
+ 4 hidden pages