DATA SHEET
SILICON TRANSISTOR
μPA807T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
•Low Current, High Gain
|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
•A Super Mini Mold Package Adopted
•Built-in 2 Transistors (2 × 2SC5179)
ORDERING INFORMATION
PART NUMBER |
QUANTITY |
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PACKING STYLE |
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μPA807T |
Loose products |
Embossed tape 8 mm wide. Pin 6 |
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(50 PCS) |
(Q1 |
Base), Pin 5 (Q2 Base), Pin 4 |
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(Q2 |
Emitter) face to perforation |
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μPA807T-T1 |
Taping products |
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side of the tape. |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0.1 |
0.15 |
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0 to |
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ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) |
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PIN CONFIGURATION (Top View) |
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PARAMETER |
SYMBOL |
RATING |
UNIT |
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Collector to Base Voltage |
VCBO |
5 |
V |
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Collector to Emitter Voltage |
VCEO |
3 |
V |
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6 |
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5 |
4 |
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Q1 |
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Emitter to Base Voltage |
VEBO |
2 |
V |
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Q2 |
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Collector Current |
IC |
10 |
mA |
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Total Power Dissipation |
PT |
30 in 1 element |
mW |
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60 in 2 elements |
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Junction Temperature |
Tj |
150 |
°C |
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Storage Temperature |
Tstg |
–65 to +150 |
°C |
PIN CONNECTIONS |
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1. |
Collector (Q1) |
4. |
Emitter (Q2) |
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2. |
Emitter (Q1) |
5. |
Base (Q2) |
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3. |
Collector (Q2) |
6. |
Base (Q1) |
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition) (Previous No. ID-3641)
Date Published November 1996 N |
© |
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19954 |
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Printed in Japan |
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μPA807T |
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ELECTRICAL CHARACTERISTICS (TA = 25 °C) |
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PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 5 V, IE = 0 |
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0.1 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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0.1 |
μA |
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DC Current Gain |
hFE |
VCE = 2 V, IC = 7 mANote 1 |
70 |
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140 |
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Gain Bandwidth Product (1) |
fT |
VCE = 2 V, IC = 7 mA, f = 2 GHz |
10 |
13 |
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GHz |
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Gain Bandwidth Product (2) |
fT |
VCE = 1 V, IC = 5 mA, f = 2 GHz |
8.5 |
12 |
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GHz |
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Feed-back Capacitance |
Cre |
VCB = 2 V, IE = 0, f = 1 MHzNote 2 |
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0.4 |
0.6 |
pF |
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Insertion Power Gain (1) |
|S21e|2 |
VCE = 2 V, IC = 7 mA, f = 2 GHz |
7.5 |
9 |
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dB |
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Insertion Power Gain (2) |
|S21e|2 |
VCE = 1 |
V, IC = 5 mA, f = 2 GHz |
7 |
8.5 |
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dB |
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Noise Figure (1) |
NF |
VCE = 2 |
V, IC = 3 mA, f = 2 GHz |
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1.5 |
2 |
dB |
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Noise Figure (2) |
NF |
VCE = 1 |
V, IC = 3 mA, f = 2 GHz |
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1.5 |
2 |
dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 2 |
V, IC = 7 mA |
0.85 |
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A smaller value among |
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hFE of hFE1 = Q1, Q2 |
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A larger value among |
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hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 % |
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2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
KB |
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Marking |
T84 |
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hFE Value |
70 to 140 |
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TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
(mW) |
200 |
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PT |
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Dissipation |
100 |
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Power |
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2 Elements in Total |
60 mW |
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Total |
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Per Element |
30 mW |
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0 |
50 |
100 |
150 |
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Ambient Temperature TA (°C) |
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COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
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25 |
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(mA) |
20 |
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200 |
μA |
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IC |
15 |
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180 |
μA |
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Current |
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160 |
μA |
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140 |
μ |
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A |
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120 |
μA |
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Collector |
10 |
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100 |
μA |
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80 |
μ |
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A |
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60 |
μ |
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A |
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5 |
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40 |
μA |
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IB = 20 |
μ |
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A |
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0 |
1.0 |
2.0 |
3.0 |
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Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
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50 |
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VCE = 2 V |
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IC (mA) |
40 |
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30 |
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Current |
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20 |
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Collector |
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0 |
0.5 |
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1.0 |
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
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500 |
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hFE |
200 |
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Gain |
100 |
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VCE = 2 V |
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DC Current |
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50 |
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VCE = 1 V |
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20 |
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10 |
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1 |
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5 |
10 |
20 |
50 |
100 |
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Collector Current IC (mA) |
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2
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
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f = 2 GHz |
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fT (GHz) |
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VCE = 2 V |
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ProductBandwidth |
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VCE = 1 V |
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Gain |
10 |
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5 |
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5 |
7 |
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Collector Current IC (mA) |
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NOISE FIGURE |
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vs. COLLECTOR CURRENT |
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3 |
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f = 2 GHz |
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(dB) |
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Figure |
2 |
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VCE = 1 V |
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Noise |
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VCE = 2 V |
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1 |
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1 |
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2 |
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5 |
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7 |
10 |
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Collector Current IC (mA) |
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μPA807T
INSERTION POWER GAIN vs. COLLECTOR CURRENT
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10 |
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(dB) |
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VCE = 2 V |
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|S21e|2 |
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VCE = 1 V |
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Gain |
5 |
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Insertion Power |
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0 |
1 |
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2 |
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5 |
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7 |
10 |
20 |
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Collector Current IC (mA) |
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FEED-BACK CAPACITANCE |
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vs. COLLECTOR TO BASE VOLTAGE |
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0.8 |
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Cre (pF) |
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f = 1 MHz |
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0.6 |
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back-Capacitance |
0.2 |
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Feed |
0.4 |
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|
|
|
|
|
|
||
|
0.0 |
2.0 |
|
4.0 |
|
6.0 |
|
8.0 |
10.0 |
Collector to Base Voltage VCB (V)
3