NEC UPA805T-T1, UPA805T Datasheet

0 (0)
SILICON TRANSISTOR
FEATURES PACKAGE DRAWINGS
Low Noise, High Gain (Unit: mm)
Operable at Low Voltage
Small Feed-back Capacitance
C
re = 0.3 pF TYP.
Built-in 2 Transistors (2 × 2SC4958)
PART NUMBER
QUANTITY PACKING STYLE
µ
PA805T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA805T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 60 in 1 element mW
120 in 2 elements
Note
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note 110 mW must not be exceeded in 1 element.
µ
PA805T
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©
1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3639
(O.D. No. ID-9146)
Date Published April 1995 P
2.1±0.1
1.25±0.1
123
654
0.2
–0
+0.1
0.650.65
1.3
2.0±0.2
0.9±0.1
0.7
0~0.1
0.15
–0
+0.1
654
Q
1
Q
2
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
XY
µ
PA805T
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1
µ
A
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1
µ
A
DC Current Gain hFE VCE = 3 V, IC = 5 mA
Note 1
75 150
Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 2 GHz 12 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz
Note 2
0.3 0.5 pF
Insertion Power Gain |S21|
2
VCE = 3 V, IC = 5 mA, f = 2 GHz 7 8.5 dB
Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 2.5 4 dB
hFE Ratio hFE1/hFE2 VCE = 3 V, IC = 5 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw 350
µ
s, Duty cycle 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank KB
Marking T82
hFE Value 75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
50
200
100
0 50 100 150
40
30
20
10
0
0.5 1
V
CE
= 3 V
Ambient Temperature T
A
(°C)
Total Power Dissipation P
T
(mW)
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
40
200
0.1
30
20
10
0 246
500 A
400 A
300 A
200 A
I
B
= 100 A
100
0
0.5 1 5 10 50 100
5 V
V
CE
= 3 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
DC Current Gain h
FE
Collector Current I
C
(mA)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT 
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN 
vs. COLLECTOR CURRENT
Free Air
60 mW
120 mW
2 Elements in Total
Per Element
µ
µ
µ
µ
µ
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