PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μPA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The μPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
•Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
•High Gain
|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
•A Mini Mold Package Adopted
•Built-in 2 Transistors (2 × 2SC4227)
ORDERING INFORMATION
PART NUMBER |
QUANTITY |
PACKING STYLE |
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μPA802T |
Loose products |
Embossed tape 8 mm wide. Pin 6 (Q1 |
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(50 PCS) |
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) |
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face to perforation side of the tape. |
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μPA802T-T1 |
Taping products |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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3 |
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4 |
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0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0~0.1 |
0.15 |
PIN CONFIGURATION (Top View)
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6 |
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5 |
4 |
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Q1
Q2
1 |
2 |
3 |
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER |
SYMBOL |
RATING |
UNIT |
PIN CONNECTIONS |
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1. Collector (Q1) |
4. |
Emitter (Q2) |
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2. Emitter (Q1) |
5. |
Base (Q2) |
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Collector to Base Voltage |
VCBO |
20 |
V |
3. Collector (Q2) |
6. |
Base (Q1) |
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Collector to Emitter Voltage |
VCEO |
10 |
V |
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Emitter to Base Voltage |
VEBO |
1.5 |
V |
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Collector Current |
IC |
65 |
mA |
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Total Power Dissipation |
PT |
150 in 1 element |
mW |
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200 in 2 elementsNote |
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Junction Temperature |
Tj |
150 |
˚C |
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Storage Temperature |
Tstg |
–65 to +150 |
˚C |
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Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3636
(O.D. No. ID-9143)
Date Published |
April 1995 P |
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Printed in Japan |
© |
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1995 |
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μPA802T |
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ELECTRICAL CHARACTERISTICS |
(TA = 25 °C) |
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PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 10 V, IE = 0 |
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0.8 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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0.8 |
μA |
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DC Current Gain |
hFE |
VCE = 3 V, IC = 7 mANote 1 |
70 |
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240 |
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Gain Bandwidth Product |
fT |
VCE = 3 |
V, IC = 7 mA, f = 1 GHz |
4.5 |
7.0 |
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Feed-back Capacitance |
Cre |
VCB = 3 V, IE = 0, f = 1 MHzNote 2 |
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0.9 |
pF |
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Insertion Power Gain |
|S21|2 |
VCE = 3 |
V, IC = 7 mA, f = 1 GHz |
10 |
12 |
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dB |
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Noise Figure |
NF |
VCE = 3 |
V, IC = 7 mA, f = 1 GHz |
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1.4 |
1.7 |
dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 3 |
V, IC = 7 mA |
0.85 |
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A smaller value among |
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hFE of hFE1 = Q1, Q2 |
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A larger value among |
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hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
FB |
GB |
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Marking |
R34 |
R35 |
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hFE Value |
70 to 150 |
110 to 240 |
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TYPICAL |
CHARACTERISTICS |
(TA = 25 °C) |
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PT - TA |
Characteristics |
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(mW) |
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Free Air |
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200 |
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PT |
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Dissipation |
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2 |
Elements |
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Per |
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in |
Total |
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100 |
Element |
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Total Power |
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0 |
50 |
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100 |
150 |
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Ambient Temperature TA (°C) |
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IC - VBE Characteristics |
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20 |
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VCE = 3 V |
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IC (mA) |
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CurrentCollector |
10 |
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0 |
0.5 |
1.0 |
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Base to Emitter Voltage VBE (V) |
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Collector Current IC (mA)
DC Current Gain hFE
IC - VCE Characteristics
25 |
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20 |
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μ |
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160 |
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A |
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15 |
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140 |
A |
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120 |
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μA |
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100 |
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μA |
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10 |
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80μ A |
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60 |
μ A |
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5 |
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40μ A |
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IB = 20μ A |
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0 |
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0.5 |
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1.0 |
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Collector to Emitter Voltage VCE (V) |
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hFE - IC Characteristics |
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200 |
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VCE = 3 V |
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0.5 |
1 |
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5 |
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10 |
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50 |
Collector Current IC (mA)
2