DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
The μPA610TA is a switching device which can be driven directly by a 2.5 V power source.
The μPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
•Can be driven by a 2.5 V power source.
•Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Package Drawings (unit: mm)
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+0.1 |
–0.15 |
0.32 |
+0.1 |
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0.65 |
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–0.05 |
0.16 |
+0.1 |
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–0.06 |
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2.8±0.2 |
1.5 |
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0 to 0.1 |
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0.95 0.95 |
0.8 |
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1.9 |
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1.1 to 1.4 |
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2.9 ±0.2 |
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Drain to Source Voltage |
VDSS |
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–30 |
V |
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Equivalent Circuit |
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Gate to Source Voltage |
VGSS |
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V |
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+20 |
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Drain Current (DC) |
ID(DC) |
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A |
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Drain |
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+0.1 |
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Drain Current (pulse) |
ID(pulse) |
+0.4 Note |
A |
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Total Power Dissipation |
PT |
300 (TOTAL) |
mW |
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Channel Temperature |
Tch |
150 |
°C |
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Storage Temperature |
Tstg |
–55 to +150 |
°C |
Gate |
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Internal Diode |
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Note PW ≤ 10 μs, Duty Cycle ≤ 1 % |
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Gate Protect |
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Diode |
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Source |
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Pin Connection (Top View) |
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6 |
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5 |
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4 |
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1. |
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Source 1 |
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2. |
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Source 2 |
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3. |
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Gate 2 |
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4. |
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Drain 2 |
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5. |
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Gate 1 |
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6. |
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Drain 1 |
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1 |
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2 |
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3 |
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Marking : |
JB |
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The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No. D11199EJ1V0DS00 (1st edition) |
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Date Published September 1996 P |
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Printed in Japan |
© |
1996 |
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μPA610TA |
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) |
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CHARACTERISTIC |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
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TEST CONDITIONS |
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Drain Cut-off Current |
IDSS |
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–1 |
μA |
VDS = –30 V, VGS = 0 |
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Gate Leakage Current |
IGSS |
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μA |
VGS = |
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+10 |
+20 V, VDS = 0 |
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Gate Cut-off Voltage |
VGS(off) |
–1.0 |
–1.4 |
–1.7 |
V |
VDS = –3 V, ID = –10 μA |
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Forward Transfer Admittance |
| yfs | |
20 |
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mS |
VDS = –3 V, ID = –10 mA |
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Drain to Source On-State |
RDS(on)1 |
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23 |
60 |
Ω |
VGS = –2.5 V, ID = –1 mA |
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Resistance |
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Drain to Source On-State |
RDS(on)2 |
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11 |
23 |
Ω |
VGS = –4 V, ID = –10 mA |
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Resistance |
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Drain to Source On-State |
RDS(on)3 |
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6 |
13 |
Ω |
VGS = –10 V, ID = –10 mA |
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Resistance |
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Input Capacitance |
Ciss |
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5 |
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pF |
VDS = –3 V |
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Output Capacitance |
Coss |
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15 |
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pF |
VGS = 0 |
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Reverse Transfer Capacitance |
Crss |
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1.3 |
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pF |
f = 1 MHz |
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Turn-on Delay Time |
td(on) |
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140 |
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ns |
VDD = –3 V, ID = –10 mA |
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VGS(on) = –4 V, RG = 10 Ω |
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Rise Time |
tr |
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330 |
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ns |
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RL = 300 Ω |
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Turn-off Delay Time |
td(off) |
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220 |
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ns |
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Fall Time |
tf |
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320 |
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ns |
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2
μPA610TA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
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100 |
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- % |
80 |
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Factor |
60 |
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dT - Derating |
40 |
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20 |
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0 |
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0 |
30 |
60 |
90 |
120 |
150 |
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TA - Ambient Temperature - ˚C |
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TRANSFER CHARACTERISTICS
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–100 |
VDS = –3 V |
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mA |
–10 |
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TA = 125 °C |
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- |
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TA = 75 °C |
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Current |
–1 |
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TA = 25 °C |
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TA = –25 °C |
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ID - Drain |
–0.1 |
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–0.01 |
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–0.001 |
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0 |
–0.8 |
–1.6 |
–2.4 |
–3.2 |
–4.0 |
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VGS - Gate to Source Voltage - V |
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- Ω |
DRAIN TO SOURCE ON–STATE RESISTANCE vs. |
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DRAIN CURRENT |
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Resistance |
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60 |
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VGS = –2.5 V |
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50 |
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-State |
40 |
TA = 125 °C |
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TA = 75 °C |
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On |
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30 |
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Source |
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20 |
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to |
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TA = 25 °C |
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Drain |
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10 |
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TA = –25 °C |
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- |
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RDS(on) |
0 |
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–0.1 |
–1 |
–10 |
–100 |
–1000 |
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ID - Drain Current - mA |
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DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
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–100 |
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mA- |
–80 |
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VGS = –10 V |
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Current |
–60 |
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VGS |
= –6 V |
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VGS |
= –4 V |
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Drain-ID |
–40 |
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VGS = |
–3 V |
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–20 |
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VGS = –2.5 V |
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0 |
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0 |
–1 |
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–2 |
–3 |
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–4 |
–5 |
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
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1000 |
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- mS |
VDS = –3 V |
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Admittance |
100 |
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TA = –25 °C |
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Transfer |
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TA = 25 °C |
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10 |
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Forward |
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TA = 75 °C |
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TA = 125 °C |
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IyfsI - |
1 |
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–0.1 |
–1 |
–10 |
–100 |
–1000 |
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ID - Drain Current - mA |
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DRAIN TO SOURCE ON–STATE RESISTANCE vs.
- Ω |
DRAIN CURRENT |
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Resistance |
60 |
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VGS = –4 V |
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50 |
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On-State |
40 |
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30 |
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Source |
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TA = 125 °C |
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20 |
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TA = 75 °C |
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to |
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- Drain |
10 |
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TA = 25 °C |
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RDS(on) |
0 |
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TA = –25 °C |
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–0.1 |
–1 |
–10 |
–100 |
–1000 |
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ID - Drain Current - mA |
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3