NEC UPA1812 Datasheet

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©
1997, 1999
MOS FIELD EFFECT TRANSISTOR
µµ
PA1812
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D12967EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The
µ
PA1812 is a switching device which can be
driven directly by a 4.0-V power source.
The
µ
PA1812 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4.0-V power source
Low on-state resistance
R
DS(on)1
= 39 m
MAX. (V
GS
= –10 V, I
D
= –2.5 A)
R
DS(on)2
= 63 m
MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)3
= 69 m
MAX. (V
GS
= –4.0 V, I
D
= –2.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
µ
PA1812GR-9JG Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage V
DSS
–30 V
Gate to Source Voltage V
GSS
–20/+5 V
Drain Current (DC) I
D(DC)
±5.0 A
Drain Current (pulse)
Note1
I
D(pulse)
±20 A
Total Power Dissipation
Note2
P
T
2.0 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
Notes 1.
PW
10
µ
s, Duty Cycle
1
%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
14
85
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.145
±0.055
0.1
1, 5, 8 :Drain
2, 3, 6, 7:Source
4 :Gate
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3°
+5°
–3°
0.6
+0.15
–0.1
1.2 MAX.
0.1±0.05
1.0±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D12967EJ1V0DS00
2
µ
µµ
µ
PA1812
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current I
DSS
V
DS
= –30
V, V
GS
= 0
V –10
µ
A
Gate Leakage Current I
GSS
V
GS
= ±20
V, V
DS
= 0
10
µ
A
Gate Cut-off Voltage V
GS(off)
V
DS
= –10
V, I
D
= –1 mA –1.0 –1.6 –2.5 V
Forward Transfer Admittance | y
fs
|V
DS
= –10
V, I
D
= –2.5
A18S
Drain to Source On-state Resi stance R
DS(on)1
V
GS
= –10
V, I
D
= –2.5
A2939m
R
DS(on)2
V
GS
= –4.5 V, I
D
= –2.5
A4663m
R
DS(on)3
V
GS
= –4.0
V, I
D
= –2.5
A5269m
Input Capacitance C
iss
V
DS
= –10
V 1500 pF
Output Capacitance C
oss
V
GS
= 0
V 550 pF
Reverse Transfer Capacitance C
rss
f = 1
MHz 270 pF
Turn-on Delay Time t
d(on)
V
DD
= –10
V30ns
Rise Time t
r
I
D
= –2.5
A 160 ns
Turn-off Delay Time t
d(off)
V
GS(on)
= –10
V 110 ns
Fall Time t
f
R
G
= 10
80 ns
Total Gate Charge Q
G
V
DS
= –24
V31nC
Gate to Source Charge Q
GS
I
D
= –5.0
A4nC
Gate to Drain Charge Q
GD
V
GS
= –10 V 8 nC
Diode Forward Voltage V
F(S-D)
I
F
= 5.0
A, V
GS
= 0
V0.76V
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
µ
Duty Cycle 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D12967EJ1V0DS00
3
µ
µµ
µ
PA1812
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
T
A
- Ambient Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
10.0 100.0
I
D
- Drain Current - A
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1 ms
100 ms
10
ms
R
DS(on)
Limited
(@V
GS
=
-
4.5
V)
I
D
(pulse)
I
D
(DC)
TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
2
DC
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.2
0.8 1.0
0.4
0.6
5
15
20
10
0
4.0 V
V
GS
= 10 V
4.5 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0 1.0 2.0 3.0
4.0
100
10
1
0.1
0.01
0.001
0.0001
V
DS
= 10 V
T
A
= 25˚C
25˚C
T
A
= 125˚C
75˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
100
1.0
2.0
1.2
1.4
1.6
1.8
1 10
0.1
0.1
1
10
100
100
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= 25 ˚C
25 ˚C
75 ˚C
125 ˚C
V
DS
= 10 V
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