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©
1997, 1999
MOS FIELD EFFECT TRANSISTOR
µ
µµ
µ
PA1812
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D12967EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark
★
★★
★
shows major revised points.
DESCRIPTION
The
µ
PA1812 is a switching device which can be
driven directly by a 4.0-V power source.
The
µ
PA1812 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
•
Can be driven by a 4.0-V power source
•
Low on-state resistance
R
DS(on)1
= 39 m
Ω
MAX. (V
GS
= –10 V, I
D
= –2.5 A)
R
DS(on)2
= 63 m
Ω
MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)3
= 69 m
Ω
MAX. (V
GS
= –4.0 V, I
D
= –2.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
µ
PA1812GR-9JG Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage V
DSS
–30 V
Gate to Source Voltage V
GSS
–20/+5 V
Drain Current (DC) I
D(DC)
±5.0 A
Drain Current (pulse)
Note1
I
D(pulse)
±20 A
Total Power Dissipation
Note2
P
T
2.0 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
–55 to +150 °C
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1
%
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
14
85
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.145
±0.055
0.1
1, 5, 8 :Drain
2, 3, 6, 7:Source
4 :Gate
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
–0.08
0.25
0.5
3°
+5°
–3°
0.6
+0.15
–0.1
1.2 MAX.
0.1±0.05
1.0±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
•
Data Sheet D12967EJ1V0DS00
2
µ
µµ
µ
PA1812
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current I
DSS
V
DS
= –30
V, V
GS
= 0
V –10
µ
A
Gate Leakage Current I
GSS
V
GS
= ±20
V, V
DS
= 0
V±10
µ
A
Gate Cut-off Voltage V
GS(off)
V
DS
= –10
V, I
D
= –1 mA –1.0 –1.6 –2.5 V
Forward Transfer Admittance | y
fs
|V
DS
= –10
V, I
D
= –2.5
A18S
Drain to Source On-state Resi stance R
DS(on)1
V
GS
= –10
V, I
D
= –2.5
A2939m
Ω
R
DS(on)2
V
GS
= –4.5 V, I
D
= –2.5
A4663m
Ω
R
DS(on)3
V
GS
= –4.0
V, I
D
= –2.5
A5269m
Ω
Input Capacitance C
iss
V
DS
= –10
V 1500 pF
Output Capacitance C
oss
V
GS
= 0
V 550 pF
Reverse Transfer Capacitance C
rss
f = 1
MHz 270 pF
Turn-on Delay Time t
d(on)
V
DD
= –10
V30ns
Rise Time t
r
I
D
= –2.5
A 160 ns
Turn-off Delay Time t
d(off)
V
GS(on)
= –10
V 110 ns
Fall Time t
f
R
G
= 10
Ω
80 ns
Total Gate Charge Q
G
V
DS
= –24
V31nC
Gate to Source Charge Q
GS
I
D
= –5.0
A4nC
Gate to Drain Charge Q
GD
V
GS
= –10 V 8 nC
Diode Forward Voltage V
F(S-D)
I
F
= 5.0
A, V
GS
= 0
V0.76V
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
µ
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10 Ω
I
D
0
t
on
t
off
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
•
Data Sheet D12967EJ1V0DS00
3
µ
µµ
µ
PA1812
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
T
A
- Ambient Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
−10.0 −100.0
I
D
- Drain Current - A
−1.0
V
DS
- Drain to Source Voltage - V
−100
−10
−1
−0.1
−0.01
−0.1
PW
=
1 ms
100 ms
10
ms
R
DS(on)
Limited
(@V
GS
=
-
4.5
V)
I
D
(pulse)
I
D
(DC)
TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
2
DC
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
−0.2
−0.8 −1.0
−0.4
−0.6
−5
−15
−20
−10
0
−4.0 V
V
GS
= −10 V
−4.5 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0 −1.0 −2.0 −3.0
−4.0
−100
−10
−1
−0.1
−0.01
−0.001
−0.0001
V
DS
= −10 V
T
A
= 25˚C
−25˚C
T
A
= 125˚C
75˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
−10
V
I
D
=
−1
mA
−50
0
150
50
100
−1.0
−2.0
−1.2
−1.4
−1.6
−1.8
−1 −10
−0.1
0.1
1
10
100
−100
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= −25 ˚C
25 ˚C
75 ˚C
125 ˚C
V
DS
= −10 V
•