DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA1810
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μPA1810 is a switching device which can be driven directly by a 2.5 V power source.
The μPA1810 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
∙Can be driven by a 2.5 V power source
∙Low on-state resistance
RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) RDS(on)3 = 100 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
ORDERING INFORMATION
PART NUMBER |
PACKAGE |
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μPA1810GR-9JG |
Power TSSOP8 |
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PACKAGE DRAWING (Unit : mm)
8 5
1, 5, 8 |
: Drain |
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1.2 MAX. |
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2, 3, 6, 7: Source |
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1.0±0.05 |
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4 |
: Gate |
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0.25 |
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3° –3+5°° |
0.5
0.1±0.05
1 4
0.6 +0.15–0.1
3.15 ±0.15 |
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3.0 ±0.1 |
0.145 ±0.055 |
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0.65 |
0.8 MAX. |
0.27 –0.08+0.03 |
0.10 M |
6.4 ±0.2 |
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4.4 ±0.1 |
1.0 ±0.2 |
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0.1 |
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage |
VDSS |
–12 |
V |
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Gate to Source Voltage |
VGSS |
−10/+5 |
V |
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Drain Current (DC) |
ID(DC) |
±4.0 |
A |
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Drain Current (pulse) Note1 |
ID(pulse) |
±16 |
A |
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Total Power Dissipation Note2 |
PT |
2.0 |
W |
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Channel Temperature |
Tch |
150 |
°C |
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Storage Temperature |
Tstg |
–55 to +150 |
°C |
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Notes 1. |
PW ≤ 10 μs, Duty Cycle ≤ 1 % |
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2. |
Mounted on ceramic substrate of 5000 mm2 x 1.1 mm |
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EQUIVALENT CIRCUIT
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Drain |
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Body |
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Gate |
Diode |
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Gate |
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Protection |
Source |
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Diode |
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Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11819EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K)
Printed in Japan
© 1996, 1999
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μ PA1810 |
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ELECTRICAL CHARACTERISTICS (TA = 25 °C) |
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CHARACTERISTICS |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
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UNIT |
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Zero Gate Voltage Drain Current |
IDSS |
VDS = –12 V, VGS = 0 V |
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–10 |
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μA |
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Gate Leakage Current |
IGSS |
VGS = ±10 V, VDS = 0 V |
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±10 |
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μA |
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Gate Cut-off Voltage |
VGS(off) |
VDS = –10 V, ID = –1 mA |
–0.5 |
–0.8 |
–1.5 |
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V |
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Forward Transfer Admittance |
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VDS = –10 V, ID = –2.0 A |
2.5 |
8.5 |
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S |
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Drain to Source On-state Resistance |
RDS(on)1 |
VGS = –4.5 V, ID = –2.0 A |
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41 |
55 |
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mΩ |
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RDS(on)2 |
VGS = –4.0 V, ID = –2.0 A |
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43 |
60 |
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mΩ |
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RDS(on)3 |
VGS = –2.5 V, ID = –2.0 A |
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71 |
100 |
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mΩ |
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Input Capacitance |
Ciss |
VDS = –10 V |
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1100 |
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pF |
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Output Capacitance |
Coss |
VGS = 0 V |
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750 |
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pF |
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Reverse Transfer Capacitance |
Crss |
f = 1 MHz |
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240 |
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pF |
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Turn-on Delay Time |
td(on) |
VDD = –10 V |
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40 |
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ns |
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Rise Time |
tr |
ID = –2.0 A |
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100 |
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ns |
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Turn-off Delay Time |
td(off) |
VGS(on) = –4.0 V |
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90 |
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ns |
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RG = 5 Ω |
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Fall Time |
tf |
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70 |
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ns |
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Total Gate Charge |
QG |
VDD = –10 V |
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35 |
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nC |
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Gate to Source Charge |
QGS |
ID = –4.0 A |
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5 |
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nC |
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Gate to Drain Charge |
QGD |
VGS = –4.0 V |
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16 |
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nC |
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Diode Forward Voltage |
VF(S-D) |
IF = 4.0 A, VGS = 0 V |
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0.75 |
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V |
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Reverse Recovery Time |
trr |
IF = 4.0 A, VGS = 0 V |
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50 |
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ns |
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di/dt = 100 A/μS |
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Reverse Recovery Charge |
Qrr |
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35 |
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nC |
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TEST CIRCUIT 1 SWITCHING TIME |
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D.U.T. |
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RL |
VGS |
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90 % |
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VGS |
10 % |
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VGS(on) |
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Wave Form |
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RG |
0 |
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PG. |
VDD |
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RG = 10 Ω |
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ID |
90 % |
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90 % |
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VGS |
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ID |
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ID |
0 10 % |
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10 % |
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0 |
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Wave Form |
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τ |
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td(on) |
tr |
td(off) |
tf |
τ = 1μ s |
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ton |
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toff |
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Duty Cycle ≤ 1 %
TEST CIRCUIT 2 GATE CHARGE
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D.U.T. |
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IG = 2 mA |
RL |
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PG. |
50 Ω |
VDD |
2 |
Data Sheet D11819EJ1V0DS00 |
μ PA1810
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
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100 |
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- % |
80 |
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Factor |
60 |
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Derating-dT |
40 |
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20 |
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0 |
30 |
60 |
90 |
120 |
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150 |
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TA - Ambient Temperature - ˚C |
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TRANSFER CHARACTERISTICS |
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−100 |
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- A |
−10 |
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VDS = −10 V |
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Current |
−1 |
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Drain |
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−0.1 |
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TA |
= |
125˚C |
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75˚C |
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- |
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25˚C |
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− |
25˚C |
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ID |
−0.01 |
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−0.001 |
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0 |
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−0.5 |
−1.0 |
−1.5 |
−2.0 |
−2.5 |
−3.0 |
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
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100 |
VDS = −10V |
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- S |
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Admittance |
10 |
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TA = −25 ˚C |
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Transfer |
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25 ˚C |
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75 ˚C |
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Forward-|y|fs |
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125 ˚C |
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1 |
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0.1 |
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−0.1 |
−1 |
−10 |
−100 |
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ID - Drain Current - A |
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FORWARD BIAS SAFE OPERATING AREA
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−100 |
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ID(pulse) |
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PW |
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= |
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V) |
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1 |
ms |
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.5 |
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−10 |
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Limited4 |
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10 |
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A |
DS(on) |
− |
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ms |
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- |
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R |
GS |
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ID(DC) |
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Current |
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(@V |
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100 |
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−1 |
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DC |
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ID - Drain |
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−0.1 |
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TA = 25 ˚C |
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Single Pulse |
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Mounted on Ceramic |
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−0.01 |
Substrate of 50cm2x 1.1mm |
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−0.1 |
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−1 |
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−10 |
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−100 |
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
V |
−1.0 |
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- |
VDS = −10 V |
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Voltageoff-Cut |
−0.8 |
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ID = −1 mA |
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Source |
−0.9 |
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−0.7 |
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Gate to |
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- |
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GS(off) |
−0.5 |
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V |
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−50 |
0 |
50 |
100 |
150 |
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Tch |
- Channel Temperature - ˚C |
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
mΩ |
DRAIN CURRENT |
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100 |
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- |
VGS = −2.5 V |
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Resistance |
80 |
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-State |
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T |
A = |
125˚C |
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75˚C |
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On |
60 |
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Source |
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25˚C |
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−25˚C |
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- Drain to |
40 |
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20 |
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RDS(on) |
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−1 |
−10 |
−100 |
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−0.01 |
−0.1 |
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|
ID - Drain Current - A
Data Sheet D11819EJ1V0DS00 |
3 |