DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
μPA1500B
N-CHANNEL POWER MOS FET ARRAY
|
|
|
|
SWITCHING USE |
|
|
|
|
|
|
|
|
||
DESCRIPTION |
|
|
|
|
|
|
|
PACKAGE DIMENSIONS |
||||||
The μPA1500B is N-channel Power MOS FET Array |
|
|
|
|
|
(in millimeters) |
|
|||||||
that built in 4 circuits and surge absorber designed for |
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|||||
solenoid, motor and lamp driver. |
|
|
|
|
|
31.5 MAX. |
|
|
|
4.2 MAX. |
||||
|
|
|
|
|
|
|
|
|
|
|||||
FEATURES |
|
|
|
|
|
|
|
|
|
|
|
2.5 TYP. 10.5 MAX. |
|
|
• 4 V driving is possible |
|
|
|
|
|
|
|
|
|
|
|
|||
• Large Current and Low On-state Resistance |
1 |
2 |
3 |
4 |
5 6 7 8 |
9 10 11 12 |
|
|
||||||
ID(DC) = ±3 A |
|
|
|
|
|
|
|
|
|
|
MIN. |
|
|
|
RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 2 A) |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
10.0 |
|
|
|||||
RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 2 A) |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|||||
• Low Input Capacitance Ciss = 200 pF TYP. |
|
|
2.54 TYP. |
0.7±0.1 |
1.4±0.1 |
0.5±0.1 |
1.4 TYP. |
|||||||
• Surge Absorber, built in |
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||
ORDERING INFORMATION |
|
|
|
|
|
|
|
|
ELECTRODE CONNECTION |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
1, 5, 8, 12 GATE |
|
|
Type Number |
Package |
|
|
|
|
|
|
|
|
|
2, 4, 9, 11 DRAIN, ANODE |
|||
|
|
|
|
|
|
|
|
|
6, 7 |
SOURCE |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|||
μPA1500BH |
12 Pin SIP |
|
|
|
|
|
|
|
|
|
3, 10 |
CATHODE |
||
|
|
|
|
|
|
|
|
|
CONNECTION DIAGRAM |
|||||
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) |
|
|
|
|
2 |
|
3 |
|
4 |
|
||||
Drain to Source Voltage |
VDSS Note 1 |
60 |
V |
|
|
|
|
|
|
|||||
|
|
|
|
D5 |
|
D6 |
|
|
||||||
Gate to Source Voltage |
VGSS Note 2 |
±20 |
V |
|
|
|
|
|
|
|
||||
Drain Current (DC) |
|
ID(DC) |
±3.0 |
A/unit |
|
|
|
|
|
|
|
|
|
|
Drain Current (pulse) |
|
ID(pulse) Note 3 |
±12 |
A/unit |
|
|
|
RG |
D1 |
|
RG |
D2 |
|
|
Repetitive peak Reverse Voltage VRRM Note 4 |
65 |
V |
|
1 |
|
|
5 |
|
|
|
|
|||
Diode Forward Current |
IF(av) Note 4 |
3.0 |
A/unit |
|
|
|
ZD |
|
|
|
ZD |
|
||
Total Power Dissipation |
PT1 Note 5 |
28 |
W |
|
|
6 |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|||||||
Total Power Dissipation |
PT2 Note 6 |
4.0 |
W |
|
|
|
9 |
|
10 |
|
11 |
|
||
Channel Temperature |
|
TCH |
150 |
˚C |
|
|
|
|
D7 |
|
D8 |
|
|
|
Storage Temperature |
|
Tstg |
–55 to 150 |
˚C |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|||||
Single Avalanche Current |
IAS Note 7 |
3.0 |
A |
|
|
|
|
|
|
|
|
|
||
Single Avalanche Energy |
EAS Note 7 |
0.9 |
mJ |
|
8 |
|
RG |
D3 |
|
RG |
D4 |
|
||
Notes 1. |
VGS = 0 |
|
|
|
|
|
|
|
12 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
2. |
VDS = 0 |
|
|
|
|
|
|
|
ZD |
|
|
|
ZD |
7 |
3. |
PW ≤ 10 μs, Duty Cycle ≤ 1 % |
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|||||
4. Rating of Surge Absorber |
|
|
|
D1 to D4 : Body Diode |
|
|
|
|
||||||
5. 4 Circuits, TC = 25 ˚C |
|
|
|
D5 to D8 : Surge Absorber |
|
|
||||||||
6. |
4 Circuits, TA = 25 ˚C |
|
|
|
ZD |
|
: Gate to Source Protection Diode |
|||||||
7. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0, |
|
RG |
|
: Gate Input Resistance 330 Ω TYP. |
||||||||||
|
|
|
|
|
|
|
|
|
||||||
|
RG = 25 Ω, L = 100 μH |
|
|
|
|
|
|
|
|
|
|
|
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No. G10597EJ2V0DS00 (2nd edition) |
|
|
Date Published December 1995 P |
|
|
Printed in Japan |
© |
1995 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
μPA1500B |
||||||||
|
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CHARACTERISTIC |
SYMBOL |
|
|
|
TEST CONDITIONS |
|
|
|
MIN. |
|
TYP. |
|
|
|
|
|
|
MAX. |
|
|
|
UNIT |
|
|
||||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain Leakage Current |
|
|
|
IDSS |
|
VDS = 60 V, VGS = 0 |
|
|
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
μA |
|
|
|||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate Leakage Current |
|
|
|
IGSS |
|
VGS = ±20 V, VDS = 0 |
|
|
|
|
|
|
|
|
|
|
±10 |
|
|
|
|
|
μA |
|
|
|||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate Cutoff Voltage |
|
|
|
VGS(off) |
|
VDS = 10 V, ID = 1.0 mA |
|
|
|
1.0 |
|
|
|
|
|
|
2.0 |
|
|
|
|
|
V |
|
|
|||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Transfer Admittance |
|
|
|
| Yfs | |
|
VGS = 10 V, ID = 2.0 A |
|
|
|
2.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
S |
|
|
|||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain to Source On-State |
|
|
|
RDS(on)1 |
|
VGS = 10 V, ID = 2.0 A |
|
|
|
|
|
0.10 |
|
|
|
0.18 |
|
|
|
|
|
Ω |
|
|
||||||||||||||||||||||||||||||
|
Resistance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RDS(on)2 |
|
VGS = 4.0 V, ID = 2.0 A |
|
|
|
|
|
0.14 |
|
|
|
0.24 |
|
|
|
|
|
Ω |
|
|
||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
|
|
Ciss |
|
VDS = 10 V, VGS = 0, f = 1.0 MHz |
|
|
|
|
|
200 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
pF |
|
|
|||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Output Capacitance |
|
|
|
Coss |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
150 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
pF |
|
|
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
|
|
|
Crss |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
55 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
pF |
|
|
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-on Delay Time |
|
|
|
td(on) |
|
|
|
|
· |
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ns |
|
|
||||||||||||||||||
|
|
|
|
|
ID = 2.0 A, VGS = 10 V, VDD = 30 V, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
· |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
Rise Time |
|
|
|
|
|
|
|
|
|
|
|
|
tr |
|
RL = 15 Ω |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ns |
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-off Delay Time |
|
|
|
td(off) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
735 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ns |
|
|
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time |
|
|
|
|
|
|
|
|
|
|
|
|
tf |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
350 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ns |
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
Total Gate Charge |
|
|
|
QG |
|
VGS = 10 V, ID = 3.0 A, VDD = 48 V |
|
|
|
13 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
nC |
|
|
|||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate to Source Charge |
|
|
|
QGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
nC |
|
|
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate to Drain Charge |
|
|
|
QGD |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4.7 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
nC |
|
|
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Body Diode Forward Voltage |
|
|
|
VF(S-D) |
|
IF = 3 A, VGS = 0 |
|
|
|
|
|
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
V |
|
|
|||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
SURGE ABSORBER (Diode, builtin) 1 Unit |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
Repetitive peak Reverse Current |
|
|
|
IRRM |
|
VR = 65 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
μA |
|
|
||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Diode Forward Voltage |
|
|
|
VF |
|
IF = 3.0 A |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.5 |
|
|
|
|
|
V |
|
|
||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Test Circuit 1 Avalanche Capability |
Test Circuit 2 Switching Time |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
DUT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
Rin = 25 Ω |
|
|
|
|
|
|
|
|
L |
|
|
|
|
|
DUT |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RL |
VGS |
VGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
90 % |
|
|
|||||
|
PG |
|
|
|
|
|
50 Ω |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 10 % |
|
|
|
|
|
|
|
|
VGS (on) |
||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
VDD |
|
|
|
|
|
Rin |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PG. |
|
|
|
|
|
|
|
|
|
|
Wave Form |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
VGS = 20 V→ 0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rin = 10 Ω |
|
|
|
|
|
|
VDD |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
BVDSS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ID |
90 % |
ID |
|
|
|
|
|
|
90 % |
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IAS |
0 |
ID |
0 |
10 % |
|
|
10 % |
|
|
|
|
||||
ID |
VDS |
Wave Form |
|
|
|
|
|
|
|
|
td (on) |
tr |
td (off) |
tf |
|
VDD |
t |
|
|
t = 1 μs |
ton |
toff |
|
|
Starting TCH |
Duty Cycle ≤ 1 % |
|
Test Circuit 3 |
Gate Charge |
|
|
|
|
DUT |
|
|
IG = 2 mA |
RL |
|
|
|
|
|
PG. |
50 |
Ω |
VDD |
|
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
|
6 |
NEC |
|
|
Under same |
|
|
|
|
||
|
μ |
|
|
dissipation in |
|
- W |
PA1500BH |
Laed |
|
||
5 |
|
each circuit |
|||
|
4 Circuits operation |
||||
Dissipation |
|
|
Circuit |
||
4 |
|
|
3 Circuits operation |
||
3 |
|
|
2 Circuits operation |
||
Power |
|
|
1 Circuit operation |
||
|
|
|
|||
2 |
|
|
|
|
|
- Total |
|
|
|
|
|
1 |
|
|
|
|
|
PT |
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
50 |
100 |
150 |
|
|
TA - Ambient Temperature - ˚C |
FORWARD BIAS SAFE OPERATING AREA
|
100 |
|
|
|
|
|
|
|
|
A |
|
|
|
|
ID(Pulse) |
|
|
|
|
- |
|
|
|
|
|
|
|
|
|
10 |
|
|
|
V) |
|
|
|
|
|
Current |
|
|
10 |
|
PW |
|
|||
|
|
|
|
|
|||||
|
|
|
|
|
|
||||
|
|
|
= |
|
|
|
|||
|
|
|
GS |
|
|
|
|||
|
|
|
|
|
|
= |
|
||
|
|
|
(V |
ID(DC) |
|
|
1 |
|
|
|
|
Limited |
|
|
|
ms |
|
||
|
|
|
|
|
10 |
|
|||
Drain |
|
|
|
|
|
|
|||
|
DS(on) |
|
|
|
100 |
50 |
ms |
|
|
|
|
|
|
ms |
|
||||
|
R |
|
|
|
|
||||
1 |
|
|
|
|
ms |
|
|
||
|
|
|
|
|
|
|
|||
ID - |
|
|
|
|
DC |
|
|
||
|
|
|
|
|
|
|
|
||
|
|
TC = 25 ˚C |
|
|
|
|
|
||
|
0.1 Single Pulse |
|
|
|
|
|
|||
|
0.1 |
|
|
1 |
10 |
|
|
100 |
|
|
|
|
VDS - Drain to Source Voltage - V |
|
FORWARD TRANSFER CHARACTERISTICS
|
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
A |
10 |
|
|
|
|
|
|
|
|
|
|
|
Pulsed |
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Current - |
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Drain |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
TA |
= |
125˚C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
75 |
˚C |
|
|
|
|
|
ID - |
|
|
|
|
|
|
|
|
|
|
25 |
˚C |
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
- |
25 |
˚C |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
1 |
2 |
3 |
4 |
5 |
|
6 |
|||||||||
|
|
|
VGS - Gate to Source Voltage - V |
|
|
μPA1500B
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
|
30 |
|
|
Under same |
|
|
|
|
|
W |
|
|
|
dissipation in |
|
|
|
each circuit |
|
- |
|
|
4 Circuits operation |
|
Dissipation |
|
|
||
20 |
|
3 Circuits operation |
||
|
|
|
||
|
|
2 Circuits operation |
||
|
|
|
|
|
Power |
|
|
1 Circuit operation |
|
10 |
|
|
|
|
PT - Total |
|
|
|
|
|
TC is grease |
|
|
|
|
|
Temperature on back surface |
|
|
|
0 |
50 |
100 |
150 |
|
|
TC - Case Temperature - ˚C |
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
- % |
100 |
|
|
|
|
|
|
|
|
Power |
|
|
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
|
|
of Rated |
|
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
|
Percentage |
40 |
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
|
dT - |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
|
|
|
TC - Case Temperature - ˚C |
|
|
|
|
|
DRAIN CURRENT vs. |
|
|
|||||||
|
|
|
DRAIN TO SOURCE VOLTAGE |
|
|
|||||||
|
12 |
|
|
|
|
|
|
|
|
|
|
|
|
VGS = |
20 V |
|
|
|
|
|
Pulsed |
|
|
||
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
||
- A |
10 |
|
10 V |
|
|
|
V |
GS = 4 |
V |
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
||||
8 |
|
|
|
|
|
|
|
|
|
|
|
|
Current |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Drain |
4 |
|
|
|
|
|
|
|
|
|
|
|
ID - |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
1 |
2 |
3 |
|
4 |
|||||||
|
|
|
VDS - Drain to Source Voltage - V |
|
|
3