NEC Electronics Inc UPA1476H Datasheet

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NEC Electronics Inc UPA1476H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1476

NPN SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)

INDUSTRIAL USE

DESCRIPTION

The μPA1476 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

Easy mount by 0.1 inch of terminal interval.

High hFE for Darlington Transistor.

Surge Absorber (Zener Diode) built in.

ORDERING INFORMATION

Part Number

Package

Quality Grade

 

 

 

μPA1476H

10 Pin SIP

Standard

 

 

 

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

100 ±15

V

Collector to Emitter Voltage

VCEO

100 ±15

V

Emitter to Base Voltage

VEBO

8

V

Collector Current (DC)

IC(DC)

±2

A/unit

Collector Current (pulse)

IC(pulse)* ±3

A/unit

Base Current (DC)

IB(DC)

0.2

A/unit

Total Power Dissipation

PT1**

3.5

W

Total Power Dissipation

PT2***

28

W

Junction Temperature

TJ

150

˚C

Storage Temperature

Tstg –55 to +150

˚C

*PW 300 μs, Duty Cycle 10 %

**4 Circuits, Ta = 25 ˚C

***4 Circuits, Tc = 25 ˚C

 

 

PACKAGE DIMENSION

 

 

(in millimeters)

 

 

26.8 MAX.

 

 

4.0

10

 

 

 

 

 

2.5

 

 

 

 

MIN.

 

 

 

2.54

 

1.4

1.4

0.6 ±0.1

 

0.5 ±0.1

 

 

1 2 3 4 5 6 7 8 910

 

 

 

 

CONNECTION DIAGRAM

3

 

5

7

 

9

2

 

4

6

 

8

1

 

 

 

 

10

 

 

(C)

 

 

 

 

 

 

 

 

PIN No.

 

 

 

2, 4, 6, 8: Base (B)

(B)

 

 

3, 5, 7, 9: Collector (C)

 

 

1, 10

: Emitter (E)

 

 

 

 

 

 

.

10 kΩ

R1

R2

R1 =.

.

900 Ω

 

 

 

R2 =.

 

 

(E)

 

 

 

The information in this document is subject to change without notice.

Document No. IC-3565

Date Published November 1994 P

Printed in Japan

© 1994

 

 

 

 

 

 

 

 

 

 

 

 

μPA1476

ELECTRICAL CHARACTERISTICS

 

(TA = 25 ˚C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CHARACTERISTIC

SYMBOL

 

MIN.

 

TYP.

MAX.

UNIT

TEST CONDITIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Leakage Current

ICBO

 

 

 

 

 

1.0

μA

VCB = 75 V, IE = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter Leakage Current

IEBO

 

 

 

 

 

1.0

mA

VEB = 5

V, IC = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE1

*

 

2000

 

 

20000

VCE = 2

V, IC = 1

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE2

*

 

500

 

 

 

VCE = 2

V, IC = 2

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Saturation Voltage

VCE(sat)

*

 

 

 

 

1.5

V

IC = 1 A, IB = 1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base Saturation Voltage

VBE(sat)

*

 

 

 

 

2

V

IC = 1 A, IB = 1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn On Time

ton

 

 

 

 

1

 

μs

IC = 1 A

 

 

 

 

 

 

 

 

 

 

 

 

IB1 = –IB2 = 2 mA

 

 

 

Storage Time

tstg

 

 

 

 

1.2

 

μs

 

 

 

 

 

 

 

 

.

.

50 Ω

 

 

 

 

 

 

 

 

 

 

 

VCC =. 50 V, RL =.

 

 

Fall Time

tf

 

 

 

 

0.4

 

μs

 

 

 

 

 

 

 

See test circuit

 

 

* PW 350 μs, Duty Cycle 2 % / pulsed

SWITCHING TIME TEST CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

.

50

Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL =.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN

 

 

IB1

 

 

IC

 

 

 

 

 

Wave Form

 

 

 

 

 

 

 

 

 

 

IB1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

 

T.U.T.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC =.

50 V

 

 

 

90 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

 

 

 

 

 

 

 

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

 

Wave Form

 

 

10 %

 

 

 

 

 

 

 

 

 

 

 

 

.

 

 

 

 

VBB =.

–5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PW =. 50

μ s

 

 

 

 

 

 

 

 

 

ton

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Duty Cycle 2 %

 

 

 

 

 

 

 

 

 

 

tstg tf

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

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