NEC Electronics Inc UPA1458H Datasheet

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NEC Electronics Inc UPA1458H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1458

NPN SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)

INDUSTRIAL USE

DESCRIPTION

The μPA1458 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

Surge Absorber (C - B) built in.

Easy mount by 0.1 inch of terminal interval.

High hFE for Darlington Transistor.

ORDERING INFORMATION

Part Number

Package

Quality Grade

 

 

 

μPA1458H

10 Pin SIP

Standard

 

 

 

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Collector to Base Voltage

VCBO

60 ±10

V

Collector to Emitter Voltage

VCEO

60 ±10

V

Emitter to Base Voltage

VEBO

7

V

Surge Sustaining Energy

ECEO(sus)

25

mJ/unit

Collector Current (DC)

IC(DC)

±5

A/unit

Collector Current (pulse)

IC(pulse)*

±10

A/unit

Collector Current

ICBS(DC)

5

mA/unit

Base Current (DC)

IB(DC)

0.5

A/unit

Total Power Dissipation

PT1**

3.5

W

Total Power Dissipation

PT2***

28

W

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg –55 to +150 ˚C

*PW 300 μs, Duty Cycle 10 %

**4 Circuits, Ta = 25 ˚C

***4 Circuits, Tc = 25 ˚C

 

 

PACKAGE DIMENSION

 

 

(in millimeters)

 

 

26.8 MAX.

 

 

4.0

10

 

 

 

 

 

2.5

 

 

 

 

10 MIN.

 

 

 

2.54

 

1.4

1.4

0.6 ±0.1

 

0.5 ±0.1

 

 

1 2 3 4 5 6 7 8 910

 

 

 

 

CONNECTION DIAGRAM

 

3

5

7

 

9

2

 

4

6

 

8

1

 

 

 

 

10

 

 

(C)

 

 

 

 

 

 

 

 

PIN No.

 

 

 

2, 4, 6, 8: Base (B)

(B)

 

 

3, 5, 7, 9: Collector (C)

 

 

1, 10

: Emitter (E)

 

 

 

 

R1

R2

.

3.0 kΩ

 

R1 =.

 

 

 

.

300 Ω

 

 

 

R2 =.

 

 

(E)

 

 

 

The information in this document is subject to change without notice.

Document No. IC-3523

(O. D. No. IC-6342)

Date Published September 1994

P

 

 

Printed in Japan

©

 

1994

 

 

μPA1458

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

 

 

 

 

 

 

 

 

 

Collector Leakage Current

ICES

 

 

 

10

μA

VCE = 40 V

 

 

 

 

 

 

 

 

 

 

 

Emitter Leakage Current

IEBO

 

 

 

10

mA

VEB = 5

V, IC = 0

 

 

 

 

 

 

 

 

 

Collector to Emitter

VCEO(sus)

 

50

60

70

V

IC = 3 A, L = 1 mH

Sustaining Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE1

*

2000

7000

20000

VCE = 2

V, IC = 2

A

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE2

*

500

3000

 

VCE = 2

V, IC = 4

A

 

 

 

 

 

 

 

 

Collector Saturation Voltage

VCE(sat)

*

 

0.9

1.5

V

IC = 2 A, IB = 2 mA

 

 

 

 

 

 

 

 

Base Saturation Voltage

VBE(sat)

*

 

1.6

2

V

IC = 2 A, IB = 2 mA

 

 

 

 

 

 

 

 

 

Turn On Time

ton

 

 

1

 

μs

IC = 2 A

 

 

 

 

 

 

 

 

IB1 = –IB2 = 2 mA

Storage Time

tstg

 

 

7

 

μs

 

 

 

.

.

20 Ω

 

 

 

 

 

 

 

VCC =. 40 V, RL =.

Fall Time

tf

 

 

2

 

μs

 

 

 

See test circuit

 

* PW 350 μs, Duty Cycle 2 % / pulsed

SWITCHING TIME TEST CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

.

20

Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL =.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

 

 

 

 

IB1

 

 

VIN

 

 

IB1

 

 

 

 

 

 

 

Wave Form

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

 

T.U.T.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC =.

40 V

 

 

 

90 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

 

 

 

 

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

PW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

.

 

 

 

 

 

 

 

 

 

Wave Form

 

 

10 %

 

 

 

 

 

 

 

 

 

.

 

 

 

 

VBB =.

–5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PW =. 50

μ s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ton

 

tstg tf

Duty Cycle 2 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

+ 4 hidden pages