NEC Electronics Inc UPA1453H Datasheet

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NEC Electronics Inc UPA1453H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1453

PNP SILICON POWER TRANSISTOR ARRAY

HIGH SPEED SWITCHING USE

INDUSTRIAL USE

DESCRIPTION

The μPA1453 is PNP silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

Easy mount by 0.1 inch of terminal interval.

High hFE. Low VCE(sat).

hFE = 100 to 400 (at IC = –2 A) VCE(sat) = –0.3 V MAX. (at IC = –2 A)

ORDERING INFORMATION

Part Number

Package

Quality Grade

 

 

 

μPA1453H

10 Pin SIP

Standard

 

 

 

Please refer to "Quality grade on NEC Semiconductor Devices"

(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Collector to Base Voltage

VCBO

–60

V

Collector to Emitter Voltage

VCEO

–60

V

Emitter to Base Voltage

VEBO

–7

V

Collector Current (DC)

IC(DC)

–5

A/unit

Collector Current (pulse)

IC(pulse)*

–10

A/unit

Base Current (DC)

IB(DC)

–1.0

A/unit

Total Power Dissipation

PT1**

3.5

W

Total Power Dissipation

PT2***

28

W

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg –55 to +150

˚C

*PW 300 μs, Duty Cycle 10 %

**4 Circuits, Ta = 25 ˚C

***4 Circuits, Tc = 25 ˚C

 

PACKAGE DIMENSION

 

(in millimeters)

 

 

26.8 MAX.

 

4.0

10

 

 

 

2.5

 

 

10 MIN.

 

 

2.54

1.4

1.4

0.6 ±0.1

0.5 ±0.1

 

1 2 3 4 5 6 7 8 910

 

 

CONNECTION DIAGRAM

3

5

7

9

2

4

6

8

1

 

 

10

 

 

PIN No.

 

 

2, 4, 6, 8: Base (B)

 

 

3, 5, 7, 9: Collector (C)

 

 

1, 10

: Emitter (E)

 

The information in this document is subject to change without notice.

Document No. IC-3519

(O. D. No. IC-6339)

Date Published September 1994

P

 

 

Printed in Japan

©

 

1994

 

 

μPA1453

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

 

 

 

 

 

 

 

 

 

Collector Leakage Current

ICBO

 

 

 

–10

μA

VCB = –50 V, IE = 0

 

 

 

 

 

 

 

 

 

 

Emitter Leakage Current

IEBO

 

 

 

–10

μA

VEB = –5 V, IC = 0

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE1

*

60

220

 

VCE = –1 V, IC = –0.1 A

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE2

*

100

220

400

VCE = –1 V, IC = –2 A

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE3

*

50

100

 

 

VCE = –2 V, IC = –5 A

 

 

 

 

 

 

 

 

 

 

Collector Saturation Voltage

VCE(sat)

*

 

–0.2

–0.3

V

IC = –2 A, IB = –0.2 A

 

 

 

 

 

 

 

 

 

 

Base Saturation Voltage

VBE(sat)

*

 

–0.9

–1.2

V

IC = –2 A, IB = –0.2 A

 

 

 

 

 

 

 

 

 

 

 

Turn On Time

ton

 

 

 

1

μs

IC = –2 A

 

 

 

 

 

 

 

 

 

IB1 = –IB2 = –0.2 A

 

Storage Time

tstg

 

 

 

2.5

μs

 

 

 

 

.

.

Ω

 

 

 

 

 

 

 

VCC =. –30 V, RL

=. 15

Fall Time

tf

 

 

 

1

μs

 

 

 

See test circuit

 

 

* PW 350 μs, Duty Cycle 2 % / pulsed

SWITCHING TIME TEST CIRCUIT

 

 

 

 

 

.

15 Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL =.

 

 

 

 

 

 

 

 

 

 

 

 

 

VIN

 

 

 

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

Base Current

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB1

 

 

 

 

 

 

 

.

Wave Form

 

 

 

 

 

 

 

 

IB1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T.U.T.

 

 

 

 

 

 

 

–30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB2

 

 

 

 

 

 

 

VCC =.

10 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

 

 

 

 

 

 

IC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

PW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

90 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Wave Form

 

 

 

 

 

 

 

 

 

 

.

 

 

μs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PW =. 50

.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Duty Cycle 2 %

VBB =. 5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ton

 

tstg

 

 

tf

2

+ 4 hidden pages