DATA SHEET
SILICON TRANSISTOR ARRAY
μPA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The μPA1436A is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES
•Easy mount by 0.1 inch of terminal interval.
•High hFE for Darlington Transistor.
•C-E Reverce Diode built in.
•High Speed Switching.
ORDERING INFORMATION
Part Number |
Package |
Quality Grade |
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μPA1436AH |
10 Pin SIP |
Standard |
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Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage |
VCBO |
150 |
V |
Collector to Emitter Voltage |
VCEO |
100 |
V |
Emitter to Base Voltage |
VEBO |
8 |
V |
Collector Current (DC) |
IC(DC) |
±3 |
A/unit |
Collector Current (pulse) |
IC(pulse)* |
±5 |
A/unit |
Base Current (DC) |
IB(DC) |
0.3 |
A/unit |
Total Power Dissipation |
PT1** |
3.5 |
W |
(Ta = 25 ˚C) |
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Total Power Dissipation |
PT2** |
28 |
W |
(Tc = 25 ˚C) |
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Junction Temperature |
Tj |
150 |
˚C |
Storage Temperature |
Tstg –55 to +150 |
˚C |
*PW ≤ 350 μs, Duty Cycle ≤ 2 %
**4 Circuits
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PACKAGE DIMENSION |
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(in millimeters) |
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26.8 MAX. |
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4.0 |
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10 |
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2.5 |
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10 MIN. |
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2.54 |
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1.4 |
1.4 |
0.6 ±0.2 |
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0.5 ±0.2 |
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1 2 3 4 5 6 7 8 910 |
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CONNECTION DIAGRAM |
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3 |
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5 |
7 |
9 |
2 |
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4 |
6 |
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8 |
1 |
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10 |
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(C) |
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(B) |
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R1 |
R2 |
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(E) |
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PIN NO. |
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2, 4, 6, 8: Base (B) |
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3, 5, 7, 9: Collector (C) |
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1, 10: Emitter (E) |
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. |
5 kΩ |
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R1 =. |
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. |
1.3 kΩ |
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R2 =. |
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The information in this document is subject to change without notice.
Document No. IC-3482 |
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(O.D. No. IC-8705) |
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Date Published September 1994 |
P |
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Printed in Japan |
© |
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1994 |
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μPA1436A
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
TEST CONDITIONS |
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Collector Leakage Current |
ICBO |
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1 |
μA |
VCB = 100 V, IE = 0 |
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Emitter Leakage Current |
IEBO |
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5 |
mA |
VEB = 5 |
V, IC = 0 |
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DC Current Gain |
hFE1 |
* |
2000 |
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20000 |
— |
VCE = 2 |
V, IC = 1.5 A |
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DC Current Gain |
hFE2 |
* |
1000 |
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— |
VCE = 2 |
V, IC = 3 A |
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Collector Saturation Voltage |
VCE(sat) |
* |
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1 |
1.5 |
V |
IC = 1.5 A, IB = 1.5 mA |
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Base Saturation Voltage |
VBE(sat) |
* |
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1.8 |
2 |
V |
IC = 1.5 A, IB = 1.5 mA |
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Turn On Time |
ton |
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0.3 |
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μs |
IC = 1.5 A |
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IB1 = –IB2 = 3 mA |
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Storage Time |
tstg |
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1.5 |
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μs |
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. |
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VCC =. 50 V, RL = 33 Ω |
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Fall Time |
tf |
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0.4 |
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μs |
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See test circuit |
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* PW ≤ 350 μs, Duty Cycle ≤ 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
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RL = 33 Ω |
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IC |
Base Current |
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IB1 |
VIN |
IB1 |
Wave Form |
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IB2 |
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IB2 |
T.U.T. |
VCC = 50 V |
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90 % |
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PW |
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Collector Current |
10 % |
IC |
PW = 50 μs |
VBB = |
–5 V |
Wave Form |
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Duty Cycle ≤ 2 % |
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ton |
tstg |
tf |
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2