DATA SHEET
SILICON TRANSISTOR ARRAY
μPA1434
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
The μPA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES
•Easy mount by 0.1 inch of terminal interval.
•High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 0.5 A) VCE(sat) = 0.5 V MAX. (at IC = 2 A)
ORDERING INFORMATION
Part Number |
Package |
Quality Grade |
μPA1434H |
10 Pin SIP |
Standard |
Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage |
VCBO |
60 |
V |
Collector to Emitter Voltage |
VCEO |
60 |
V |
Emitter to Base Voltage |
VEBO |
7 |
V |
Collector Current (DC) |
IC(DC) |
3 |
A/unit |
Collector Current (pulse) |
IC(pulse)* |
6 |
A/unit |
Base Current (DC) |
IB(DC) |
0.6 |
A/unit |
Total Power Dissipation |
PT1** |
3.5 |
W |
(Ta = 25 ˚C) |
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Total Power Dissipation |
PT2** |
28 |
W |
(Tc = 25 ˚C) |
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Junction Temperature |
Tj |
150 |
˚C |
Storage Temperature |
Tstg –55 to +150 |
˚C |
*PW ≤ 300 μs, Duty Cycle ≤ 10 %
**4 Circuits
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PACKAGE DIMENSION |
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(in millimeters) |
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26.8 MAX. |
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4.0 |
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10 |
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2.5 |
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10 MIN. |
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2.54 |
1.4 |
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1.4 |
0.6 ±0.1 |
0.5 ±0.1 |
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1 2 3 4 5 6 7 8 910 |
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CONNECTION DIAGRAM |
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3 |
5 |
7 |
9 |
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2 |
4 |
6 |
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8 |
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1 |
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10 |
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PIN NO. |
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2, 4, 6, 8: Base (B) |
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3, 5, 7, 9: Collector (C) |
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1, 10: Emitter (E) |
The information in this document is subject to change without notice.
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
© 1994
μPA1434
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
TEST CONDITIONS |
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Collector Leakage Current |
ICBO |
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10 |
μA |
VCB = 60 V, IE = 0 |
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Emitter Leakage Current |
IEBO |
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10 |
μA |
VEB = 5 |
V, IC = 0 |
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DC Current Gain |
hFE1 |
* |
800 |
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3200 |
— |
VCE = 5 |
V, IC = 0.5 A |
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DC Current Gain |
hFE2 |
* |
500 |
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— |
VCE = 5 |
V, IC = 3 A |
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Collector Saturation Voltage |
VCE(sat) |
* |
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0.5 |
V |
IC = 2 A, IB = 20 mA |
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Base Saturation Voltage |
VBE(sat) |
* |
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1.2 |
V |
IC = 2 A, IB = 20 mA |
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Turn On Time |
ton |
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1 |
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μs |
IC = 2 A |
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IB1 = –IB2 = 10 mA |
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Storage Time |
tstg |
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3 |
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μs |
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. |
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Ω |
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VCC =. 50 V, RL =. 25 |
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Fall Time |
tf |
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1.5 |
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μs |
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See test circuit |
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* PW ≤ 350 μs, Duty Cycle ≤ 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
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RL = 25 Ω |
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IC |
Base Current |
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IB1 |
VIN |
IB1 |
Wave Form |
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IB2 |
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IB2 |
T.U.T. |
VCC = 50 V |
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90 % |
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PW |
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Collector Current |
10 % |
IC |
PW = 50 μs |
VBB = |
–5 V |
Wave Form |
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Duty Cycle ≤ 2 % |
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ton |
tstg |
tf |
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2