NEC Electronics Inc UPA1434H Datasheet

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NEC Electronics Inc UPA1434H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1434

NPN SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE

INDUSTRIAL USE

DESCRIPTION

The μPA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

Easy mount by 0.1 inch of terminal interval.

High hFE. Low VCE(sat).

hFE = 800 to 3200 (at IC = 0.5 A) VCE(sat) = 0.5 V MAX. (at IC = 2 A)

ORDERING INFORMATION

Part Number

Package

Quality Grade

μPA1434H

10 Pin SIP

Standard

Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

7

V

Collector Current (DC)

IC(DC)

3

A/unit

Collector Current (pulse)

IC(pulse)*

6

A/unit

Base Current (DC)

IB(DC)

0.6

A/unit

Total Power Dissipation

PT1**

3.5

W

(Ta = 25 ˚C)

 

 

 

Total Power Dissipation

PT2**

28

W

(Tc = 25 ˚C)

 

 

 

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg –55 to +150

˚C

*PW 300 μs, Duty Cycle 10 %

**4 Circuits

 

PACKAGE DIMENSION

 

 

(in millimeters)

 

26.8 MAX.

 

4.0

10

 

 

 

 

2.5

 

 

 

10 MIN.

 

 

 

2.54

1.4

1.4

0.6 ±0.1

0.5 ±0.1

 

1 2 3 4 5 6 7 8 910

 

 

 

CONNECTION DIAGRAM

 

3

5

7

9

2

4

6

 

8

1

 

 

 

10

 

 

PIN NO.

 

 

2, 4, 6, 8: Base (B)

 

 

3, 5, 7, 9: Collector (C)

 

 

1, 10: Emitter (E)

The information in this document is subject to change without notice.

Document No. IC-3480

Date Published September 1994 P

Printed in Japan

© 1994

μPA1434

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

 

 

 

 

 

 

 

 

 

Collector Leakage Current

ICBO

 

 

 

10

μA

VCB = 60 V, IE = 0

 

 

 

 

 

 

 

 

 

 

 

Emitter Leakage Current

IEBO

 

 

 

10

μA

VEB = 5

V, IC = 0

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE1

*

800

 

3200

VCE = 5

V, IC = 0.5 A

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE2

*

500

 

 

VCE = 5

V, IC = 3 A

 

 

 

 

 

 

 

 

 

 

Collector Saturation Voltage

VCE(sat)

*

 

 

0.5

V

IC = 2 A, IB = 20 mA

 

 

 

 

 

 

 

 

 

 

Base Saturation Voltage

VBE(sat)

*

 

 

1.2

V

IC = 2 A, IB = 20 mA

 

 

 

 

 

 

 

 

 

 

Turn On Time

ton

 

 

1

 

μs

IC = 2 A

 

 

 

 

 

 

 

 

IB1 = –IB2 = 10 mA

 

Storage Time

tstg

 

 

3

 

μs

 

 

 

 

.

.

Ω

 

 

 

 

 

 

 

VCC =. 50 V, RL =. 25

Fall Time

tf

 

 

1.5

 

μs

 

 

 

See test circuit

 

 

 

 

 

 

 

 

 

 

 

* PW 350 μs, Duty Cycle 2 % /pulsed

SWITCHING TIME TEST CIRCUIT

 

 

RL = 25 Ω

 

 

 

 

 

IC

Base Current

 

IB1

VIN

IB1

Wave Form

 

 

 

 

 

IB2

 

 

 

 

 

 

IB2

T.U.T.

VCC = 50 V

 

 

 

 

90 %

 

 

 

 

 

 

PW

 

 

Collector Current

10 %

IC

PW = 50 μs

VBB =

–5 V

Wave Form

 

 

 

 

Duty Cycle 2 %

 

 

ton

tstg

tf

 

 

 

2

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