NEC PS7341-1A, PS7341-1B, PS7341CL-1A, PS7341L-1A, PS7341L-1B Datasheet

DATA SHEET

OCMOS FETTM

PS7341-1B,PS7341L-1B

HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET

(1-ch OCMOS FET)

DESCRIPTION

The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side.

They are suitable for analog signal control because of their low offset and high linearity.

The PS7341L-1B has a surface mount type lead.

FEATURES

•High isolation voltage (BV = 3 750 Vr.m.s.)

•1 channel type (1 b output)

•Low LED Operating Current (IF = 2 mA)

•Designed for AC/DC switching line changer

•Small package (6-pin DIP)

•Low offset voltage

•PS7341L-1B: Surface mount type

•UL approved: File No. E72422 (S)

•BSI approved: No. 8252/8253

•CSA approved: CA 101391

APPLICATIONS

•Exchange equipment

•Measurement equipment

•FA/OA equipment

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14229EJ1V0DS00 (1st edition)

Date Published June 1999 NS CP(K)	©		1999
Printed in Japan

PS7341-1B,PS7341L-1B

PACKAGE DIMENSIONS (in millimeters)

PS7341-1B

						9.25±0.5							6													5				4									TOP VIEW
																																										1.			LED Anode
																																										2.			LED Cathode
																																										3.			NC
																																										4.			MOS FET Drain
																																										5.			MOS FET Source
																																										6.			MOS FET Drain
						1																				2				3
																																								7.62
4.15±0.3			3.5±0.3																											6.5±0.5
3.3±0.3																																	0 to 15˚
			0.5±0.1
1.34±0.1								2.54
			0.25 M
													PS7341L-1B
						9.25±0.5							6													5				4									TOP VIEW
																																									1.				LED Anode
																																									2.				LED Cathode
																																									3.				NC
																																									4.				MOS FET Drain
																																									5.				MOS FET Source
																																									6.				MOS FET Drain
						1																				2				3

	6.5±0.5
3.5±0.3	+0.10 –0.05
	0.10
	0.9±0.25
1.34±0.1	2.54
0.25 M	9.60±0.4

2	Data Sheet P14229EJ1V0DS00

PS7341-1B,PS7341L-1B

ORDERING INFORMATION

Part Number	Package	Packing Style	Application Part Number*1
PS7341-1B	8-pin DIP	Magazine case 50 pcs	PS7341-1B
PS7341L-1B			PS7341L-1B
PS7341L-1B-E3		Embossed Tape 1 000 pcs/reel
PS7341L-1B-E4

*1 For the application of the Safety Standard, following part number should be used.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

	Parameter			Symbol	Ratings	Unit
Diode	Forward Current (DC)			IF	50	mA
	Reverse Voltage			VR	5.0	V
	Power Dissipation			PD	50	mW
	Peak Forward Current *1			IFP	1	A
MOS FET	Break Down Voltage			VL	400	V
	Continuous		Connection A	IL	150	mA
	Load Current*2
			Connection B		200
			Connection C		300
	Pulse Load Current*3			ILP	300	mA
	(AC/DC Connection)
	Power Dissipation			PD	560	mW
Isolation Voltage *4				BV	3 750	Vr.m.s.
Total Power Dissipation				PT	610	mW
Operating Ambient Temperature				TA	−40 to +85	°C
Storage Temperature				Tstg	−40 to +125	°C

*1	PW = 100 μs, Duty Cycle = 1 %
*2	Conditions: IF ³ 2 mA. The following types of load connections are available.
		1	6
	A	2	5	IL			VL (AC/DC)
		3	4		L
		1	6		L	+	VL (DC)
			5	IL
		2				–
	B	3	4
		1	6
						–
		2	5	IL			VL (DC)
		3			L	+
			4
		1	6	IL	L	+	VL (DC)
	C		5
		2			IL + IL	–
		3		IL
			4
*3	PW = 100 ms, 1shot
*4	AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
			Data Sheet P14229EJ1V0DS00				3

PS7341-1B,PS7341L-1B

RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)

Parameter	Symbol	MIN.	TYP.	MAX.	Unit
LED Operating Current	IF	2	10	20	mA
LED Off Voltage	VF	0		0.5	V

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

	Parameter	Symbol	Conditions	MIN.	TYP.	MAX.	Unit
Diode	Forward Voltage	VF	IF = 10 mA		1.2	1.4	V
	Reverse Current	IR	VR = 5 V			5.0	μA
MOS FET	Off-state Leakage Current	ILoff	IF = 10 mA, VD = 400 V		0.5	10	μA
	Output Capacitance	Cout	IF = 10 mA, VD = 0 V, f = 1 MHz		185		pF
Coupled	LED Off-state Current	IFoff	IL = 150 mA			2.0	mA
	On-state Resistance	Ron1	IF = 0 mA, IL = 10 mA		20	30	W
		Ron2	IF = 0 mA, IL = 150 mA		16	25
	Turn-on Time *1	ton	IF = 10 mA, VO = 5 V, PW ³ 10 ms		0.03	0.2	ms
	Turn-off Time *1	toff			0.6	1.5
	Isolation Resistance	RI-O	VI-O = 1.0 kVDC	109			W
	Isolation Capacitance	CI-O	V = 0 V, f = 1 MHz		1.1		pF

*1 Test Circuit for Switching Time

IF
Pulse Input	VL	Input	50 %
			0
Input monitor	VO monitor	VO = 5 V	90 %
		Output
Rin	RL		10 %
		toff	ton

4	Data Sheet P14229EJ1V0DS00