NEC NNCD12E, NNCD3.3E, NNCD5.1E, NNCD4.7E, NNCD3.9E Datasheet
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DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV, thus making itself most suitable for external interface circuit protection.
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold Package having allowable power dissipation of 200 mW.
FEATURES
•Based on the electrostatic discharge immunity test (IEC1000-4- 2), the product assures the minimum endurance of 30 kV.
•Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
APPLICATIONS
•External interface circuit E.S.D protection.
•Circuits for Waveform clipper, Surge absorber.
PACKAGE DIMENSIONS
(in millimeters)
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–0.05 |
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2.8 ± 0.2 |
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+0.1 |
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1.5 |
0.65–0+0..115 |
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0.4 |
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0.2 |
0.95 |
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2 |
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± |
0.95 |
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+0.1 |
–0.05 |
2.9 |
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1 |
3 |
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0.4 |
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0.3 |
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Marking |
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–0.06 |
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1.1to 1.4 |
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+0.1 |
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0.16 |
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0 to 0.1 |
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MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation |
P |
200 mW |
PIN CONNECTION |
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1. |
NC |
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Surge Reverse Power |
PRSM |
100 |
W (tT = 10 μs 1 pulse) Fig. 6 |
2. |
Anode |
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Junction Temperature |
Tj |
150 |
°C |
3. |
Cathode |
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SC-59 (EIAJ) |
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–55 °C to +150 °C |
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Storage Temperature |
Tstg |
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Document No. D11773EJ2V0DS00 (2nd edition) |
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Date Published December 1996 N |
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Printed in Japan |
© |
1996 |
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NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
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Breakdown VoltageNote 1 |
Dynamic |
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Reverse Leakage |
Capacitance |
E.S.D Voltage |
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ImpedanceNote 2 |
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VBR (V) |
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IR (μA) |
Ct (pF) |
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(kV) |
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Type Number |
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Zz (Ω) |
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MIN. |
MAX. |
IT (mA) |
MAX. |
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IT (mA) |
MAX. |
VR (V) |
TYP. |
TEST |
MIN. |
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TEST |
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CONDITION |
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CONDITION |
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NNCD3.3E |
3.10 |
3.50 |
5 |
130 |
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5 |
20 |
1.0 |
220 |
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30 |
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NNCD3.6E |
3.40 |
3.80 |
5 |
130 |
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10 |
1.0 |
210 |
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30 |
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NNCD3.9E |
3.70 |
4.10 |
5 |
130 |
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10 |
1.0 |
200 |
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30 |
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NNCD4.3E |
4.01 |
4.48 |
5 |
130 |
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5 |
10 |
1.0 |
180 |
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30 |
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NNCD4.7E |
4.42 |
4.90 |
5 |
130 |
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10 |
1.0 |
170 |
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30 |
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NNCD5.1E |
4.84 |
5.37 |
5 |
130 |
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5 |
5 |
1.5 |
160 |
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30 |
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C = 150 pF |
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NNCD5.6E |
5.31 |
5.92 |
5 |
80 |
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5 |
5 |
2.5 |
140 |
VR = 0 V |
30 |
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R = 330 Ω |
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f = 1 MHz |
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(IEC1000 |
NNCD6.2E |
5.86 |
6.53 |
5 |
50 |
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5 |
2 |
3.0 |
120 |
30 |
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-4-2) |
NNCD6.8E |
6.47 |
7.14 |
5 |
30 |
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5 |
2 |
3.5 |
110 |
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30 |
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NNCD7.5E |
7.06 |
7.84 |
5 |
30 |
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2 |
4.0 |
90 |
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30 |
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NNCD8.2E |
7.76 |
8.64 |
5 |
30 |
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5 |
2 |
5.0 |
90 |
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30 |
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NNCD9.1E |
8.56 |
9.55 |
5 |
30 |
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5 |
2 |
6.0 |
90 |
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30 |
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NNCD10E |
9.45 |
10.55 |
5 |
30 |
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5 |
2 |
7.0 |
80 |
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30 |
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NNCD11E |
10.44 |
11.56 |
5 |
30 |
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2 |
8.0 |
70 |
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30 |
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NNCD12E |
11.42 |
12.60 |
5 |
35 |
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5 |
2 |
9.0 |
70 |
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30 |
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Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
NNCD3.3E to NNCD12E
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
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250 |
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- mW |
200 |
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Dissipation |
150 |
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Power |
100 |
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P - |
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50 |
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0 |
0 |
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25 |
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50 |
75 |
100 |
125 |
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150 |
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TA - Ambient Temperature - °C |
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Fig. 2 IT - VBR |
CHARACTERISTICS |
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Fig. 3 IT - VBR |
CHARACTERISTICS |
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NNCD7.5E |
NNCD8.2E |
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100 m |
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NNCD6.8E |
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NNCD9.1E |
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100 m |
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NNCD11E |
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NNCD3.3E |
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NNCD10E |
NNCD12E |
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NNCD3.6E |
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10 m NNCD3.9E |
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10 m |
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NNCD4.3E |
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- A |
1 m |
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- A |
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1 m |
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State Current |
NNCD4.7E |
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State Current |
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100 μ |
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100 μ |
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10 μ |
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10 μ |
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On |
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On |
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- |
1 μ |
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- |
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1 μ |
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IT |
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IT |
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100 n NNCD5.1E |
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100 n |
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NNCD5.6E |
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10 n |
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NNCD6.2E |
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10 n |
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1 n |
1 |
2 |
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4 |
5 |
6 |
7 |
8 |
9 |
10 |
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1 n |
7 |
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10 11 12 13 14 15 |
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0 |
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0 |
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VBR - Breakdown Voltage - V |
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VBR - Breakdown Voltage - V |
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